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    onsemi MBRS360T3G

    DIODE SCHOTTKY 60V 3A SMC
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    DigiKey MBRS360T3G Digi-Reel 34,091 1
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    MBRS360T3G Cut Tape 34,091 1
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    MBRS360T3G Reel 34,000 2,500
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    Avnet Americas MBRS360T3G Reel 292,500 8 Weeks 2,500
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    MBRS360T3G Ammo Pack 1
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    Mouser Electronics MBRS360T3G 64,723
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    Verical MBRS360T3G 405,000 7,500
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    MBRS360T3G 1,530 8 Weeks 1
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    Newark MBRS360T3G Cut Tape 67,967 1
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    MBRS360T3G Reel 2,500 2,500
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    RS MBRS360T3G Bulk 1
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    Onlinecomponents.com MBRS360T3G 2,500
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    Bristol Electronics MBRS360T3G 1,671
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    Quest Components MBRS360T3G 158
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    MBRS360T3G 98
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    TME MBRS360T3G 8,667 1
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    Ameya Holding Limited MBRS360T3G 1,274
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    ComSIT USA MBRS360T3G 13,661
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    Chip 1 Exchange MBRS360T3G 6,500
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    Avnet Asia MBRS360T3G 37,500 8 Weeks 7,500
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    Avnet Silica MBRS360T3G 5,000 9 Weeks 2,500
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    Chip-Germany GmbH MBRS360T3G 1,480
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    Chip1Stop MBRS360T3G Cut Tape 110
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    EBV Elektronik MBRS360T3G 117,500 10 Weeks 2,500
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    Master Electronics MBRS360T3G 2,500
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    New Advantage Corporation MBRS360T3G 95,000 1
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    Win Source Electronics MBRS360T3G 188,886
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    Wuhan P&S MBRS360T3G 52,500 1
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    onsemi MBRS360T3

    DIODE SCHOTTKY 60V 3A SMC
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    DigiKey MBRS360T3 Reel 2,500
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    Bristol Electronics MBRS360T3 13,623
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    MBRS360T3 4,427
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    MBRS360T3 400 9
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    Quest Components MBRS360T3 11,338
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    MBRS360T3 9,639
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    MBRS360T3 2,145
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    MBRS360T3 1,840
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    MBRS360T3 847
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    MBRS360T3 320
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    MBRS360T3 160
    • 1 $0.525
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    Ameya Holding Limited MBRS360T3 7,521
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    Chip 1 Exchange MBRS360T3 2,360
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    Component Electronics, Inc MBRS360T3 1,073
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    Win Source Electronics MBRS360T3 141,562
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    Vishay Semiconductors MBRS360TR

    DIODE SCHOTTKY 60V 3A DO214AB
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    onsemi MBRS360T3H

    DIODE SCHOTTKY 60V 4A SMC
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    Vishay Semiconductors VS-MBRS360TRPBF

    DIODE SCHOTTKY 60V 3A DO214AB
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    DigiKey VS-MBRS360TRPBF Digi-Reel 1
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    MBRS360T Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRS360T3 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBRS360T3 Motorola SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 40, 60 VOLTS Original PDF
    MBRS360T3 On Semiconductor 3A 60V Schottky Rectifier; Package: SMC; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    MBRS360T3 On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRS360T3 On Semiconductor 3A 60V Schottky Rectifier Original PDF
    MBRS360T3 On Semiconductor MBRS360 - DIODE 4 A, 60 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 403-03, SMC, 2 PIN, Rectifier Diode Original PDF
    MBRS360T3 Microsemi Schottky Rectifier Scan PDF
    MBRS360T3 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Schottky Rectifier, 60V, 3A, Pkg Style SMC Scan PDF
    MBRS360T3G On Semiconductor 3A 60V Schottky Rectifier Original PDF
    MBRS360T3G On Semiconductor MBRS360 - DIODE 4 A, 60 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE 403-03, SMC, 2 PIN, Rectifier Diode Original PDF
    MBRS360TR International Rectifier Schottky Rectifier Original PDF
    MBRS360TR International Rectifier Schottky Rectifier Original PDF
    MBRS360TR International Rectifier Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 60V 3A SMC Original PDF

    MBRS360T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBRS360T3G

    Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D MBRS360T3G NRVBS360T3G MBRS360BT3G MBRS360BT3

    MBRS360TRPBF

    Abstract: marking V36 diode SCHOTTKY
    Text: MBRS360TRPbF Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Small foot print, surface mountable RoHS • Very low forward voltage drop COMPLIANT • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability


    Original
    PDF MBRS360TRPbF MBRS360TRPbF 18-Jul-08 marking V36 diode SCHOTTKY

    DIODE B36

    Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3 10IPK/IO DIODE B36 part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode

    Untitled

    Abstract: No abstract text available
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3 MBRS360T3/D

    diode ir36

    Abstract: MBRS360TRPbF MBRS360pbf AN-994
    Text: Bulletin PD-20412 07/04 MBRS360TRPbF SCHOTTKY RECTIFIER 3 Amp IF AV = 3.0Amp VR = 60V Description/ Features Major Ratings and Characteristics The MBRS360TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and


    Original
    PDF PD-20412 MBRS360TRPbF MBRS360TRPbF 12-Mar-07 diode ir36 MBRS360pbf AN-994

    Untitled

    Abstract: No abstract text available
    Text: VS-MBRS360TRPbF Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode


    Original
    PDF VS-MBRS360TRPbF J-STD-020, 2002/95/EC VS-MBRS360TRPbF 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20412 07/04 MBRS360TRPbF SCHOTTKY RECTIFIER 3 Amp IF AV = 3.0Amp VR = 60V Description/ Features Major Ratings and Characteristics The MBRS360TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and


    Original
    PDF PD-20412 MBRS360TRPbF MBRS360TRPbF 08-Mar-07

    diode ir36

    Abstract: SMC MARKING mj AN-994 MBRS360TR ir36
    Text: Bulletin PD-20586 rev. C 03/03 MBRS360TR SCHOTTKY RECTIFIER 3 Amp SMC Major Ratings and Characteristics Characteristics Description/Features MBRS360TR Units The MBRS360TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small


    Original
    PDF PD-20586 MBRS360TR MBRS360TR diode ir36 SMC MARKING mj AN-994 ir36

    DIODE MOTOROLA B34

    Abstract: marking B34 diode SCHOTTKY motorola b36 b34 DIODE schottky CASE 403-03 B34 motorola DIODE B36 diode b34 motorola b34 diode marking b34
    Text: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS340T3 MBRS360T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original
    PDF MBRS340T3/D MBRS340T3 MBRS360T3 DIODE MOTOROLA B34 marking B34 diode SCHOTTKY motorola b36 b34 DIODE schottky CASE 403-03 B34 motorola DIODE B36 diode b34 motorola b34 diode marking b34

    B36 schottky diode

    Abstract: No abstract text available
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device Ăemploys the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3, MBRS360BT3G MBRS360T3/D B36 schottky diode

    Diode marking CODE 5M smb

    Abstract: No abstract text available
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3, MBRS360BT3G MBRS360T3/D Diode marking CODE 5M smb

    Untitled

    Abstract: No abstract text available
    Text: VS-MBRS360TRPbF Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode


    Original
    PDF VS-MBRS360TRPbF J-STD-020, 2002/95/EC VS-MBRS360TRPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    MBRS360BT3G

    Abstract: MBRS360T3G MBRS360T3 B36 schottky diode
    Text: MBRS360T3, MBRS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3, MBRS360BT3G MBRS360T3/D MBRS360BT3G MBRS360T3G MBRS360T3 B36 schottky diode

    5M MARKING CODE DIODE SMC

    Abstract: No abstract text available
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D 5M MARKING CODE DIODE SMC

    part marking b36 diode

    Abstract: MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3, MBRS360BT3G MBRS360T3/D part marking b36 diode MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36

    MBRS360TRPBF

    Abstract: No abstract text available
    Text: Bulletin PD-20412 07/04 MBRS360TRPbF SCHOTTKY RECTIFIER 3 Amp IF AV = 3.0Amp VR = 60V Description/ Features Major Ratings and Characteristics The MBRS360TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and


    Original
    PDF PD-20412 MBRS360TRPbF MBRS360TRPbF

    diode ir36

    Abstract: AN-994 MBRS360TR ir36
    Text: Bulletin PD-20586 rev. A 02/02 MBRS360TR SCHOTTKY RECTIFIER 3 Amp SMC Major Ratings and Characteristics Characteristics Description/Features MBRS360TR Units The MBRS360TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small


    Original
    PDF PD-20586 MBRS360TR MBRS360TR diode ir36 AN-994 ir36

    MBRS340T3G

    Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
    Text: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG


    Original
    PDF MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRS340T3G MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc

    DIODE ON SEMICONDUCTOR B34

    Abstract: marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32
    Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 r14525 MBRS340T3/D DIODE ON SEMICONDUCTOR B34 marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32

    diode ir36

    Abstract: ir36
    Text: Bulletin PD-20586 rev. D 07/04 MBRS360TR SCHOTTKY RECTIFIER 3 Amp IF AV = 3.0Amp VR = 60V Major Ratings and Characteristics Description/ Features Characteristics Value Units IF(AV) Rectangular waveform 3.0 A VRRM 60 V IFSM @ t p= 5 µs sine 790 A VF @3.0 Apk, TJ = 125°C


    Original
    PDF PD-20586 MBRS360TR MBRS360TR diode ir36 ir36

    DIODE B36

    Abstract: part marking b36 diode MBRS360T3 semiconductor b36 b36 diode 1B marking marking B36 b36 marking Schottky Diode B36
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3 MBRS360T3/D DIODE B36 part marking b36 diode MBRS360T3 semiconductor b36 b36 diode 1B marking marking B36 b36 marking Schottky Diode B36

    Untitled

    Abstract: No abstract text available
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    PDF MBRS360T3 MBRS360T3/D

    D0-214AB

    Abstract: 30BQ060 D0214AB HSM350 HSM360 MBRS360T3 SK36
    Text: 3 Amp Schottky Rectifier HSM350, HSM360 — Oh rATur\nr d a m r CATHODE BAND Dim. Inches Minimum D0215AB D0214AB Microsemi Catalog Number HSM350* HSM360* A B C D E F G H Idustry Part Number SK36 MBRS360T3 30BQ060 Working Peak Reverse Voltage .117 .260 .220


    OCR Scan
    PDF HSM350, HSM360 D0214AB D0215AB HSM350* HSM360* MBRS360T3 30BQ060 D0-214AB 30BQ060 D0214AB HSM350 HSM360 MBRS360T3 SK36

    marking B34 diode SCHOTTKY

    Abstract: b34 DIODE schottky diode schottky B34 DIODE MOTOROLA B34 DIODE B36 Schottky Diode B36 marking b34 DIODE B34 B36 schottky diode B34 schottky diode
    Text: MOTOROLA SEMICONDUCTOR — — — TECHNICAL DATA MBRS340T3 MBRS360T3 S u rfa c e M o u n t S c h o tt k y P o w e r R e ctifie r Motorola Preferred Device . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and. metal


    OCR Scan
    PDF