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    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling


    OCR Scan     		PDF HYM594000B HY5117400 HY514100A 22jiF HYM594000BM/BLM 1BC06-11-MAR94 50fifi

    HY5118160

    Abstract: No abstract text available
    Text: H Y 5 1 1 8 1 6 0 ‘H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5118160 16-bit. HY5118160 1AD15-10-MAY94 4b75Dflfl 322fi HY5118160JC

    Untitled

    Abstract: No abstract text available
    Text: u V I I u n It • • ‘M T U N D A 16Mx4 bit Synchronous DRAM Series HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 I PRELIMINARY DESCRIPTION HY57V644010 8Mbit HY57V644020 4Mbit x 4bank x 4 I/0 , LVTTL


    OCR Scan     		PDF 16Mx4 HY57V644010/ HY57V644020/ HY57V654010/ HY57V654020 HY57V644011/ HY57V644021/ HY57V654011/ HY57V654021 HY57V644010

    Untitled

    Abstract: No abstract text available
    Text: •«HYUNDAI HYM5V64404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY51V16404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin giass-epoxy printed circuit board. 0.1


    OCR Scan     		PDF HYM5V64404A 64-bit HY51V16404A HYM5V64404AKG/ATKG/ASLKG/ASLTKG A0-A11) DQ0-DQ63) DDDST42

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000 HY531000 HYM581000M 1BB01-11-MAY93 4L750afl HYM581000M 1BB01-11-M HYM581000A