2sk1060
Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104
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2SK104
2SK105
2SK162
2SK163
2SK193
2SK195
2SK505
X10679EJCV0SG00
1996P
2sk1060
2SK type
transistor 2sk
transistor 2sk193
2SK105 Datasheet
transistor 2sk162
transistor SST 250
2SK1794
2SK104
2SK2234
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fp31ff
Abstract: transistor 131 349 2110 FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 QFN-6x6 rohm
Text: FP31QF The Communications Edge TM Product Information 2-Watt HFET Applications • • • • • • Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain
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FP31QF
FP31QF
1-800-WJ1-4401
fp31ff
transistor 131
349 2110
FP31QF-F
FP31QF-PCB1900
FP31QF-PCB2140
FP31QF-PCB900
JESD22-A114
QFN-6x6 rohm
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2SK2701A
Abstract: FKv550n 2sk3003 2SK3801 2SK3199 fkv575
Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)
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2SK2420
2SK2701A
2SK2803
2SK2848
2SK2943
2SK3003
2SK3004
2SK3199
2SK3710
2SK3711
FKv550n
2SK3801
fkv575
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FKV550N
Abstract: No abstract text available
Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)
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2SK1188
2SK2420
2SK2701A
2SK2778
2SK2779
2SK2803
2SK2848
2SK2943
2SK3003
2SK3004
FKV550N
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fkp*253
Abstract: fkv550n FKV550T FKP280 2SK2710a fkv550
Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SK1179 500 VGSS (V) ID (A) ±20 ±8.5 ID (pulse) (A) PD (W) ±34 85 IGSS EAS (mJ) 400 (nA) max ±500 VTH IDSS Conditions VGS (V) ±20 (µA) min max Conditions VDS
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2SK1179
2SK1183
2SK1188
2SK2419
2SK2420
2SK2701
2SK2702*
2SK2704
2SK2707*
2SK2709
fkp*253
fkv550n
FKV550T
FKP280
2SK2710a
fkv550
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2sk30
Abstract: FKv550n 2SK3003 2SK3199 2SK2778
Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)
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2SK2420
2SK2701A
2SK2778
2SK2779
2SK2803
2SK2848
2SK2943
2SK3003
2SK3004
2SK3199
2sk30
FKv550n
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FKv550n
Abstract: FKV550T 2SK2848 FKP330C 2SK3004 FKP250A 2SK3710A 2SK3003 2SK2701A 2SK3711
Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)
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2SK2701A
2SK2778
2SK2779
2SK2803
O-220S
95MAX
FKv550n
FKV550T
2SK2848
FKP330C
2SK3004
FKP250A
2SK3710A
2SK3003
2SK2701A
2SK3711
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TRANSISTOR 187
Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Text: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60
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2SJ424
2SJ425
2SK1177
2SK1179
2SK1180
2SK1181
2SK1183
2SK1184
2SK1185
2SK1186
TRANSISTOR 187
fkv550
2sk2943
2SK3460
2SK2710a
2SK3724
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ultra low igss pA mosfet
Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)
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LS4117,
2N4117)
2N4117A
300mW
2N4117/A
2N4118
FN4117/A
2N4118A
ultra low igss pA mosfet
n-channel JFET sot23-6
Ultra High Input Impedance N-Channel JFET Amplifier
N channel jfet
3N191 SPICE
P-Channel Depletion Mode FET
2n4117 jfet
jfet transistor 2n4391
U422
ultra low igss pA mosfet n channel
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Untitled
Abstract: No abstract text available
Text: TF218TH Ordering number : EN7683A TF218TH N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones.
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EN7683A
TF218TH
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IT05911
Abstract: 75542 IT05909 TF202
Text: Ordering number : ENN7554 TF202 N-channel Junction FET TF202 Electret Condenser Microphone Applications • • • Especially suited for use in electret condenser microphone. Ultrasmall package permitting TF202 applied sets to be made small and slim. Excellent voltage characteristics.
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ENN7554
TF202
TF202]
IT05911
75542
IT05909
TF202
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N3001
Abstract: TF218
Text: Ordering number : ENN7088 TF218 N-channel Silicon Junction FET TF218 Capacitor Microphone Applications 0.2 • [TF218] 1.4 0.25 0.07 • unit : mm 2201 3 2 0.45 1 0.07 • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in audio, telephone capacitor
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ENN7088
TF218
TF218]
N3001
TF218
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A0201
Abstract: TF202B
Text: TF202B Ordering number : ENA0201 TF202B N-channel Silicon Junction FET Condenser Microphone Applications Features • • • • • Especially suited for use in condenser microphone for audio equipments and telephones. TF202B is possible to make applied sets smaller and thinner
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TF202B
ENA0201
TF202B
A0201-4/4
A0201
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Untitled
Abstract: No abstract text available
Text: EC4A01LF Ordering number : EN8714 EC4A01LF N-Channel Silicon Junction FET Condenser Microphone Applications Features • • • • • • Ultrasmall 1710 size , thin (0.35mm) leadless package. Especially suited for use in condenser microphone for audio equipments and telephones.
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EC4A01LF
EN8714
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marking Sanyo
Abstract: EC3A01H
Text: Ordering number : ENN7301 EC3A01H N-Channel Silicon Junction FET EC3A01H Electret Condenser Microphone Applications Features • • unit : mm 2209 [EC3A01H] 1.200 4 0.3 0.500 3 0.500 0.320 • Ultraminiature 1206 size and thin (0.5mm) leadless package.
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ENN7301
EC3A01H
EC3A01H]
ECSP1206
marking Sanyo
EC3A01H
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EC3A01B
Abstract: TA-3160
Text: Ordering number : ENN6612 EC3A01B N-Channel Silicon Junction FET EC3A01B Capacitor Microphone Applications Features • 0.15 0.15 0.05 1 2 0.25 0.4 0.65 0.25 • [EC3A01B] 0.35 0.2 3 0.5 1.0 • Ultrasmall 1006 size , thin (0.5mm) leadless package. unit : mm
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ENN6612
EC3A01B
EC3A01B]
E-CSP1006
EC3A01B
TA-3160
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TA-3161
Abstract: EC4A01C It02310 13001 fet
Text: Ordering number : ENN6613 EC4A01C N-Channel Silicon Junction FET EC4A01C Capacitor Microphone Applications 0.05 • 0.5 0.2 3 4 2 1 1 : Base 2 : Emitter 3 : Collector 4 : Collector 0.05 0.6 Bottom view 1.0 • [EC4A01C] 0.05 • 0.3 • Package Dimensions
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ENN6613
EC4A01C
EC4A01C]
E-CSP1008-4
TA-3161
EC4A01C
It02310
13001 fet
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FH101
Abstract: No abstract text available
Text: FH101 The Communications Edge Advanced Product Information High Dynamic Range FET Product Features • 50-3000 MHz Bandwidth • +36 dBm Output IP3 • 1.2 dB Noise Figure • 18 dB Gain • +18 dBm P1dB • Single or Dual Supply Operation • MTBF >100 Years
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FH101
OT-89
FH101
OT-89.
1-800-WJ1-4401
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EC4A01TF
Abstract: No abstract text available
Text: EC4A01TF Ordering number : EN8715 EC4A01TF N-Channel Silicon Junction FET Condenser Microphone Applications Features • • • • • Ultrasmall 1006 size , thin (0.35mm) leadless package. Especially suited for use in condenser microphone for audio equipments and telephones.
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EC4A01TF
EN8715
EC4A01TF
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TF218TH
Abstract: No abstract text available
Text: TF218TH Ordering number : ENN7683 TF218TH N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones.
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TF218TH
ENN7683
TF218TH
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EC3A01T
Abstract: ECSP1006-3
Text: Ordering number : ENN7617 EC3A01T N-Channel Silicon Junction FET EC3A01T Electret Condenser Microphone Applications Features Bottom View Top View 1 1.0 1 0.05 • [EC3A01T] 0.05 0.65 • unit : mm 2223 0.25 • Ultrasmall 1006 size and thin (0.35mm) leadless
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ENN7617
EC3A01T
EC3A01T]
ECSP1006-3
EC3A01T
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SPF2086TK
Abstract: No abstract text available
Text: ô ta, îîYices -ï SPF-2086TK 0.1-4 GHz Low Noise PHEMT GaAs FET Absolute Maximum Ratings at 25C Parameter Absolute Maximum Drain-Source Voltage Vds +7V Gate-Source Voltage (Vgs) -7V Drain Current (Ids) Idss Forward Gate Current (Igst) 10mA RF Input Power (Pin)
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SPF-2086TK-TR1
SPF-2086TK
100mW
400mW
Rn/50
SPF2086TK
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Untitled
Abstract: No abstract text available
Text: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz
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MwT-10
MwT-10
MwT10
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ISO220 package
Abstract: MWT273HP MwT-273 ISO220
Text: MwT-2 26 GHz High Power GaAs FET M ic r o W a v e T e c h n o l o g y Units in urn • • • • • +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES
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