Untitled
Abstract: No abstract text available
Text: UG2F, UG2G www.vishay.com Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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22-B106
DO-204AC
DO-15)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product UG2F, UG2G Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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22-B106
2002/95/EC
2002/96/EC
DO-204AC
DO-15)
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product UG2F, UG2G Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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Original
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PDF
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22-B106
2002/95/EC
2002/96/EC
DO-204AC
DO-15)
2002/95/EC.
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: New Product UG2F, UG2G Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106
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Original
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PDF
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22-B106
2002/95/EC
2002/96/EC
DO-204AC
DO-15)
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: General Lighting Automotive C R E A T I V E L I G H T UV 世 界 をもっと 変 え て いく 光 の 未 来 創 造 Display LCD Backlighting Specialty Lighting 2014-2 2014-2 Contents ［ 目 次 ］ 086 ･ ･ ･ ･ ･ ･ ･ ･･････････････････････････････････････････
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Produ5752
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NF2W757GR
Abstract: D4973
Text: General Lighting Automotive C R E A T I V E L I G H T UV 世 界 をもっと 変 え て いく 光 の 未 来 創 造 Display LCD Backlighting Specialty Lighting 2015-1 2015-1 Contents ［ 目 次 ］ 092 ･ ･ ･ ･ ･ ･ ･ ･･････････････････････････････････････････
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NSSW0
Abstract: No abstract text available
Text: General Lighting Automotive C R E A T I V E L I G H T UV 世 界 をもっと 変 え て いく 光 の 未 来 創 造 Display LCD Backlighting Specialty Lighting 2014-1 2014-1 Contents ［ 目 次 ］ 088 ･ ･ ･ ･ ･ ･ ･ ･･････････････････････････････････････････
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87-gil,
NSSW0
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212-152
Abstract: NS6W183A NF2W757AR-V1
Text: General Lighting Automotive C R E A T I V E L I G H T UV 世 界 をもっと 変 え て いく 光 の 未 来 創 造 Display LCD Backlighting Specialty Lighting 2013-1 2013-1 Contents ［ 目 次 ］ 084 ･････････････････････････････････････････････････
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NT2W757DR
Abstract: No abstract text available
Text: General Lighting Automotive C R E A T I V E L I G H T UV 世 界 をもっと 変 え て いく 光 の 未 来 創 造 Display LCD Backlighting Specialty Lighting 2013-2 2013-2 Contents ［ 目 次 ］ 082 ･ ･ ･ ･ ･ ･ ･ ･･････････････････････････････････････････
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23A08-10,
NT2W757DR
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507N-2CH-F-C
Abstract: 507HN-1AC-F-C 507-2AH-F-C
Text: Song Chuan / Relay Catalog 507 Features • High rating miniature PCB Relay. · AC & DC coil are both available. · UL/CUL and VDE approved. · 17A 277VAC SPDT. · 12A 277VAC DPDT. · Low profile 15.7 and high insulation system class F · High CTI 250 material & New Glow Wire Approved
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277VAC
2011/65/EU
507-1AC-F-C
507-1AC-F-S
507-1CH-F-S
507-2AC-F-C
507-2AC-F-S
507-2AH-F-C
507-2AH-F-S
507N-2CH-F-C
507HN-1AC-F-C
507-2AH-F-C
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ta 8873
Abstract: MA005B MA005BK MA005A MA005C MA005CL top 8901 8873C
Text: Data Sheet July 2000 MA005-Series Power Modules; dc-dc Converters: 10 Vdc to 15 Vdc Input; 5 W Features The MA005-Series Power Modules use advanced, surfacemount technology and deliver high-quality, compact, dc-dc conversion at an economical price. Applications
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MA005-Series
EN60950,
IEC950)
DS99-003EPS
DS93-203EPS)
ta 8873
MA005B
MA005BK
MA005A
MA005C
MA005CL
top 8901
8873C
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MH005CL
Abstract: MH005-Series YIO 98 MH005A MH005B MH005BK MH005C
Text: Data Sheet December 1999 MH005-Series Power Modules: 4.5 Vdc to 14 Vdc Input; 5 W Features The MH005-Series Power Modules use advanced, surfacemount technology and deliver high-quality, compact, dc-dc conversion at an economical price. Applications • Distributed power architectures
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MH005-Series
EN60950,
IEC950)
DS98-222EPS
DS93-089EPS)
MH005CL
YIO 98
MH005A
MH005B
MH005BK
MH005C
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MH005CL
Abstract: MH005B MH005BK MH005-Series YIO 98 MH005A MH005C 8900c
Text: Data Sheet April 2008 MH005-Series Power Modules: 4.5 Vdc to 14 Vdc Input; 5 W Features n n n The MH005-Series Power Modules use advanced, surfacemount technology and deliver high-quality, compact, dc-dc conversion at an economical price. Applications n Distributed power architectures
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MH005-Series
DS98-223EPS
DS98-222EPS)
MH005CL
MH005B
MH005BK
YIO 98
MH005A
MH005C
8900c
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MA005B
Abstract: lucent technologies W series 8873C
Text: Data Sheet July 2000 MA005-Series Power Modules; dc-dc Converters: 10 Vdc to 15 Vdc Input; 5 W Features • Small size: 50.8 mm x 27.9 mm x 11.7 mm 2.00 in. x 1.10 in. x 0.46 in. ■ Output current limiting ■ High efficiency: 77% to 80% typical ■ Output overvoltage protection
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MA005-Series
EN60950,
IEC950)
DS99-003EPS
DS93-203EPS)
MA005B
lucent technologies W series
8873C
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Untitled
Abstract: No abstract text available
Text: Catalog 82007 Flexible Film Products R e vise d 8-9 6 Flexible Film Contacts, Continuous Strip for Sequential Termination Material and Finish: Phosphor bronze; plated gold duplex or bright tin-lead overall (See chart below.) Cable Thickness— .0 15 [0.38] max.
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07T7312
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P125L
Abstract: P125 P902
Text: 1— * n: o $ — rr < Ld Ld NOTES: <J 1. 1 3 . 7 CRIMP FOR 18-24 54 ro cn cn m y i 2 . CODE (2.79)/.11 MAX DIA L E T T E R P R E C E D I N G P A R T N o . DE S I G N A T E S MFG L O C ' N I =1 R E L A ND ( 4 . 3 n a oo AWG WI R E INSUL . 1 7 3. MATERIAL:
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11nch
S8993X
P125L
P125
P902
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9s complement circuit
Abstract: No abstract text available
Text: DM8898/DM8899 TRI-STATE BCD to Binary/Binary to BCD Converters DM8898/DM8899 National Semiconductor Corporation General Description These circuits are the TRI-STATE versions of the popular BCD to binary and binary to BCD converters, DM74184 and DM74185A respectively. They are derived from the 256-bit
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DM8898/DM8899
DM8898/DM8899
DM74184
DM74185A
256-bit
DM8598.
TL/F/6593-5
9s complement circuit
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binary bcd conversion
Abstract: bcd9 DM74184 DM74185A DM88 DM8898 DM8898N DM8899N N16A 4849H
Text: DM8898/DM8899 National Semiconductor Corporation DM8898/DM8899 TRI-STATE BCD to Binary/Binary to BCD Converters General Description These circuits are the TRI-STATE versions of the popular BCD to binary and binary to BCD converters, DM74184 and DM74185A respectively. They are derived from the 256-bit
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DM8898/DM8899
DM74184
DM74185A
256-bit
DM8598.
TL/F/6593-5
binary bcd conversion
bcd9
DM88
DM8898
DM8898N
DM8899N
N16A
4849H
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DM8598
Abstract: No abstract text available
Text: January 1987 DM8898/DM8899 TRI-STATE BCD to Binary/Binary to BCD Converters General Description These circuits are the TRI-STATE versions of the popular BCD to binary and binary to BCD converters, DM74184 and DM74185A respectively. They are derived from the 256-bit
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DM8898/DM8899
DM74184
DM74185A
256-bit
DM8598.
DM8598
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8523S
Abstract: diode b63 SENSOR HALL 6847 se MAX 8899 max 8897 IC 6848 8522S AN 8523S 2,7GHz PRESCALER ecl prescaler sip
Text: Bipolar Digital ICs • Driver Arrays O utput Breakdown Type No. Functions Input Resistor Voltage <Q VcE SUS) O utput C urrent O utput Clam p N um bers of Diode (mA) Package Circuits No. (V) I.STTL C om patible 3f> 500 No 7 16-DIP(b) B39 DN 8690 D a rlington d riv e r (E m itte r com m on)
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16-DIP
23-ZIP
6844S
6845S
6846S
6847/S
6B47SE/TE
6848/S
6848SE/TE
8523S
diode b63
SENSOR HALL 6847 se
MAX 8899
max 8897
IC 6848
8522S
AN 8523S
2,7GHz PRESCALER
ecl prescaler sip
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DM74367
Abstract: 54175 71ls97 DM74109 DM8160 om541 ci 8602 gn block diagram 5401 DM transistor 74L10 74S136
Text: N ational Semiconductor Section 1 - 54/74 SSI DEVICES Connection Diagram s • Electrical Tables Section 2 - 54/74 M SI DEVICES Section 3 - National Semiconductor PROPRIETARY DEVICES Section 4 - National Semiconductor ADDITIONAL D EV KES t o NATIONAL Manufactured under one or more of the fo llowing U.S. patents: 3083262, 3189758, 3231797 , 3303356, 3317671, 3323071, 3381071, 3408542, 3421025, 3426423, 3440498, 3518750, 3519897, 3557431, 3560765,
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Untitled
Abstract: No abstract text available
Text: H ig h - P e r f o r m a n c e 256K x4 R I A S 7 C I0 2 H A S7C 102X L C M O S SK AM PRELIM INARY 2 5 6 K x 4 C M O S S R A M C o m m o n I/O I FEATURES • Organization: 262,144 words x 4 bits • Equal access and cycle times • Highspeed • Easy memory expansion with (ÜË and ÜE inputs
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28-pin
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Untitled
Abstract: No abstract text available
Text: H igh -P erform an ce 128K x9 CM OS SRAM 1 1 A S 7 C Ì0 2 9 A S 7 C I0 2 9 L PRELIMINARY i 28K x9 C M O S S R A M C om m on I/O [FEATURES_ • Organization: 131,072 words x 9 bits • Equal access and cycle times • Highspeed • Easy memory expansion with £E and (5E inputs
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32-pin
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Untitled
Abstract: No abstract text available
Text: High-Performance 256 KByte Asynchronous AS7M32D256 I l ^ Cache Module PRELIMINARY 256 Ktívte Asynchronous Cache Module PIN ARRANGEMENT I FEATURES 64 pin dual-readout SIMM - Same pinout for 128/256KB - No motherboard jumpers required - Small footprint: less than 1.2 in2
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AS7M32D256
128/256KB
50/33ling,
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