BR931
Abstract: motorola mca MCA3200ETL MCA6200ETL MCA750ETL H4C018 Motorola Master Selection Guide H4C161 wirebond die flag lead frame an1512
Text: Semicustom Application Specific Integrated Circuits In Brief . . . Motorola supports strategic programs and co–development partnerships to accelerate the availability of advanced processes CMOS, BiCMOS, Bipolar , packaging and CAD technology. Extensive research,
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Material density CDA 195
Abstract: eutectic 157 CDA 194 olin 7025 Eftec 64t X10-4 resistivity table sn 8400 MF202 silver
Text: Physical Constants of IC Package Materials 5 Table 5-1 through Table 5-9 list typical values for selected properties of materials used in IC packages. Table 5-1. Case Material Characteristics Properties Density Modulus of Elasticity Tensile Strength Alumina
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UPD4564163G5-A10B
Abstract: uPD4564841G5-A10-9JF UPD4564163G5A10L9JF
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.
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PD4564441
PD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
UPD4564163G5-A10B
uPD4564841G5-A10-9JF
UPD4564163G5A10L9JF
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E014
Abstract: upd4564163g5a10b
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.
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PD4564441,
64M-bit
864-bit
54-pin
M01E0107
E014
upd4564163g5a10b
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M12650EJ5V0DS00
Abstract: PD45128163G5-A10-9JF PD45128163G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF uPD45128841G5-A10B-9JF PD45128841G5-A80-9JF
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.
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PD45128441,
128M-bit
728-bit
54-pin
M12650EJ5V0DS00
PD45128163G5-A10-9JF
PD45128163G5-A80-9JF
PD45128441
PD45128441G5-A10-9JF
uPD45128441G5-A10B-9JF
PD45128441G5-A80-9JF
PD45128841G5-A10-9JF
uPD45128841G5-A10B-9JF
PD45128841G5-A80-9JF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441,45128841,45128163 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access memories, organized as 8,388,608x4x4, 4,194,304x8x4, 2,097,152x16x4 word x bit x bank , respectively.
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PD45128441
PD45128441,
608x4x4,
304x8x4,
152x16x4
54-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.
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PD4564441,
64M-bit
864-bit
54-pin
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NEC MEMORY
Abstract: p77 cac uPD4564441
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.
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PD4564441,
64M-bit
864-bit
54-pin
NEC MEMORY
p77 cac
uPD4564441
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NEC MEMORY
Abstract: mark t6 UPD4564163G5-A10-9JF
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.
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PD4564441,
64M-bit
864-bit
54-pin
NEC MEMORY
mark t6
UPD4564163G5-A10-9JF
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EDD1204ALTA-1A
Abstract: EDD1204ALTA-75 EDD1204ALTA-7A EDD1208ALTA-1A EDD1208ALTA-75 EDD1208ALTA-7A Material density CDA 195
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT EDD1204ALTA, EDD1208ALTA, EDD1216ALTA 128 M-bit Synchronous DRAM with Double Data Rate 4-bank, SSTL_2 Description The EDD1204ALTA, EDD1208ALTA, EDD1216ALTA are high-speed 134,217,728 bits synchronous dynamic
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EDD1204ALTA,
EDD1208ALTA,
EDD1216ALTA
EDD1216ALTA
608x4x4,
304x8x4,
152x16x4
66-pin
EDD1204ALTA-1A
EDD1204ALTA-75
EDD1204ALTA-7A
EDD1208ALTA-1A
EDD1208ALTA-75
EDD1208ALTA-7A
Material density CDA 195
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polyaniline
Abstract: 226 capacitor Material density CDA 195 non electrolytic capacitor esl esr
Text: CARTS USA 2005 March 21-24, 2005 Palm Springs, CA Strategies for Manufacturing Ultra Low ESR Ta Capacitors Randy Hahn and Kim Pritchard KEMET Electronics Corp PO Box 5928 Greenville, SC 29606 Tel: +1 864-963-6300 Fax: +1 864-228-4333 [email protected] past. These trends coupled with the need to
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stl 950 polybutylene
Abstract: MS3348 dps 298 cp 2 1650402-1 1-1600960-8 Bus Bar torque for metric copper bolts 6648236-1 5MM PITCH PIN STRIP HEADER RIGHT ANGLE 66084-1 6648223-1 SWAGE
Text: Power Connectors & Interconnection Systems MULTI-BEAM XL Power Distribution Connector System Board Mount Connectors Product Facts Single-piece molded housings • Custom configurable modular design ■ AC and DC power in the same connector — Meets UL safety requirements
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LSC series Microcontroller by MOTOROLA
Abstract: No abstract text available
Text: ICs for Communications Siemens Codec with UPNTransceiver SCOUT-P PSB 21391 Version 1.3 Siemens Codec with UPNTransceiver SCOUT-PX PSB 21393 Preliminary Data Sheet 09.99 DS 1 PSB 21391 PSB 21393 Revision History: Current Version: 09.99 Previous Version: Prel. Data Sheet 10.98
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P-MQFP-44-1
LSC series Microcontroller by MOTOROLA
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mt 10p10
Abstract: ITT Cannon 5420 mt 1336 e
Text: ca_D1-D102:Layout 1 2/10/11 11:51 AM Page 1 ca_D1-D102:Layout 1 2/10/11 11:51 AM Page 2 Cannon Microminiature Products system, developed by ITT in the early 1960’s. A separate section describes in detail the twist pin electrical contact technology refer to page D-6 .
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D1-D102
MIL-DTL-83513
D-102
mt 10p10
ITT Cannon 5420
mt 1336 e
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VIC 2A 94v-0
Abstract: Duracell dr17 sn 76545 panasonic MS614 self tapping screws DIN 7981 hole size smps 12 volt 3 amp simel HIGH VOLTAGE CONNECTORS DC-JACK Power Connectors ml616 1648416-1
Text: 55249CVR 8/5/05 8:49 PM Page 1 AMP & ELCON Power Connectors & Interconnection Systems Power Connectors & Interconnection Systems Table of Contents Table of Contents …………………………………………………………………………… 2, 3
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55249CVR
VIC 2A 94v-0
Duracell dr17
sn 76545
panasonic MS614
self tapping screws DIN 7981 hole size
smps 12 volt 3 amp
simel HIGH VOLTAGE CONNECTORS
DC-JACK Power Connectors
ml616
1648416-1
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PCB design for very fine pitch csp package
Abstract: Senju 179GHH 37K-1 B12-246 Modified Coffin-Manson Equation Calculations Senju metal solder paste 160 e7 Semicon volume 1 SSYZ015A
Text: MicroStar BGAt Packaging Reference Guide Literature Number: SSYZ015A Second Edition – September 1999 MicroStar BGA is a trademark of Texas Instruments Incorporated. Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue
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SSYZ015A
PCB design for very fine pitch csp package
Senju
179GHH
37K-1
B12-246
Modified Coffin-Manson Equation Calculations
Senju metal solder paste
160 e7
Semicon volume 1
SSYZ015A
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smd transistor mark E13
Abstract: Modified Coffin-Manson Equation Calculations senju solder paste m10 f12 A10D10 P6K6 BGA reflow guide Senju metal flux T5 k5m6 K793 T4V4
Text: MicroStar BGAt Packaging Reference Guide Literature Number: SSYZ015B Third Edition – September 2000 MicroStar BGA is a trademark of Texas Instruments Incorporated. Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue
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SSYZ015B
smd transistor mark E13
Modified Coffin-Manson Equation Calculations
senju solder paste m10 f12
A10D10
P6K6
BGA reflow guide
Senju metal flux T5
k5m6
K793
T4V4
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KL SN 102 94v0
Abstract: ASTM d4066 ms3367 RBS 6601 Installation guide for RBS 6000 SHK 55-65 Scanbe ejector kit rbs 6501 cr40 steel 11633-1 SCANBE KL SN 102 94v
Text: RI-55006 cat cover for pdf 8/5/02 9:48 AM Page 2 2002 NEW PRODUCTS DISTRIBUTOR LOCATIONS WORLDWIDE RICHCO USA Please call Customer Service 773 539-4060, Samples (800) 621-1892, or visit www.richcoinc.com for your nearest distributor location. EUROPE Alldistri Handelsges. m.b.H.
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RI-55006
3000-Rupea-Brasov
SR-3230
OFS90
WIT-30AR
PPR-10
KL SN 102 94v0
ASTM d4066 ms3367
RBS 6601
Installation guide for RBS 6000
SHK 55-65
Scanbe ejector kit
rbs 6501
cr40 steel
11633-1 SCANBE
KL SN 102 94v
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d4564841
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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64M-bit
uPD4564441
864-bit
54-pin
d4564841
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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uPD4564441
64M-bit
PD4564441,
864-bit
54-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD4512 8 4 4 1 ,4 5 1 2 8 8 4 1 ,4 5 1 2 8 1 6 3 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access
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/JPD4512
128M-bit
PD45128441,
728-bit
54-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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64M-bit
uPD4564441
864-bit
54-pin
M12621EJBV0DS00
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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/JPD4564441
64M-bit
uPD4564441
864-bit
54-pin
14D-0
S54G5-80-9JF-1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.
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//PD45128441
128M-bit
uPD45128441
728-bit
54-pin
12650EJ80D
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