KRC828E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC828E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 YI 1 2 Item Marking Description Device Mark YI KRC828E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC828E
KRC828E
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KRC828U
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC828U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking 2. Marking 3 No. 0 1 YI 1 2 Item Marking Description Device Mark YI KRC828U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC828U
KRC828U
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MARKING OF CHIP RESISTOR
Abstract: Resistor 511 Ohm color code SMD resistors 121 smd code marking rac 10k resistor network SIP 10K SIP Resistor E192 paste resistor thick film SMD resistors codes smd marking 619
Text: Chip Resistors Stackpole Electronics, Inc. Part Marking Instructions Resistive Product Solutions Part Marking Instructions – Chip Resistors 5% Marking The nominal resistance is marked on the surface of the overcoating with the use of 3 digit markings. 0201 and 0402 are not marked.
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E24/E96
MARKING OF CHIP RESISTOR
Resistor 511 Ohm color code
SMD resistors 121
smd code marking rac
10k resistor network SIP
10K SIP Resistor
E192
paste resistor thick film
SMD resistors codes
smd marking 619
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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marking s11
Abstract: No abstract text available
Text: Multilayer Chip Balun CHM1608U-F 積層チップバラン Series TYPE CHM1608U-F Series 1.6±0.15 3 2 0.3±0.1 1 MARKING 0.8±0.1 0.8±0.1 4 5 6 0.55 0.25 TOP VIEW SIDE VIEW ③ ④ NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper Surface of
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CHM1608U-F
CHM1608U-F
2400MHzR80.
800MHz
CHM1608U-F2R4A
CHM1608U-F2R4B
CHM1608U-F2R4C
marking s11
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2012U
Abstract: marking s11
Text: Multilayer Chip Balun CHM2012U-F 積層チップバラン Series TYPE CHM2012U-F Series 2.0±0.15 3 2 0.3±0.15 1 MARKING 1.0Max. 1.25±0.15 4 5 SIDE VIEW TOP VIEW ③ ④ 0.65 0.35 6 NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper surface of the
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CHM2012U-F
CHM2012U-F
Electr012U-F1R8B
CHM2012U-F1R8C
CHM2012U-F2R0A
CHM2012U-F2R0B
CHM2012U-F2R0C
2012U
marking s11
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marking s11
Abstract: No abstract text available
Text: Multilayer Chip Balun CHM1608U-F 積層チップバラン Series TYPE CHM1608U-F Series 1.6±0.15 3 2 0.3±0.1 1 MARKING 0.8±0.1 0.8±0.1 4 5 6 0.55 0.25 TOP VIEW SIDE VIEW ③ ④ NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper Surface of
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CHM1608U-F
CHM1608U-F
CHM1608U-F2R4A
CHM1608U-F2R4B
CHM1608U-F2R4C
CHM1608U-F3R4A
marking s11
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transistor marking 3em
Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
r14525
MMBTH10LT1/D
transistor marking 3em
MMBTH10LT1
mmbth10
MMBTH10-4LT1
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Untitled
Abstract: No abstract text available
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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mps 1049
Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS
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MMBTH10LT1,
MMBTH10-4LT1
mps 1049
JB marking transistor
Marking H11 sot
marking JB sot23
JB MARKING SOT-23
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transistor marking 3em
Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS
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MMBTH10LT1,
MMBTH10-4LT1
MMBTH10LT1/D
transistor marking 3em
MMBTH10
MMBTH10LT1G
MMBTH10LT1
TRANSISTOR AH 2
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Untitled
Abstract: No abstract text available
Text: LTF1608L-FQ Multilayer Chip Low Pass Filters Series 積層チップローパスフィルタ TYPE LTF1608L-FQ Series DIMENSIONS / 外形寸法 Numeral or Alphabet 1.6 MARKING 0.8 3 0.6 0.5 2 1 0.2 4 TOP VIEW SIDE VIEW OUT GND IN GND 1 2 3 4 Unit: mm • Marking of polarity : marking is on the upper surface of the
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LTF1608L-FQ
LTF1608L-FQ
8mm42mm
LTF1608L-F
LTF1608L-FP
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HAMAMATSU L9491
Abstract: No abstract text available
Text: ADVANCED ELECTROSTATIC REMOVER "Particle Free" "Ozone Free" "No Air Flow" Compact & Power supply compatible in world-wide & CE marking compliance Introducing a electrostatic charge removal using "PHOTOIONIZATION"!! L12645 ADVANCED ELECTROSTATIC REMOVER
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L12645
SE-164
TAPP1079E03
B1201
HAMAMATSU L9491
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C9991
Abstract: HAMAMATSU L9491 x-ray Ionization chamber x-ray c9991 C9492 L9490 aloka L9491 x-ray tube operation ionizer
Text: ADVANCED ELECTROSTATIC REMOVER "Particle Free" "Ozone Free" "No Air Flow" Compact & Power supply compatible in world-wide & CE marking compliance ACTUAL SIZE Introducing a electrostatic charge removal using "PHOTOIONIZATION"!! ADVANCED ELECTROSTATIC REMOVER
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SE-171-41
TAPP1068E04
C9991
HAMAMATSU L9491
x-ray Ionization chamber
x-ray c9991
C9492
L9490
aloka
L9491
x-ray tube operation
ionizer
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smd MARKING CODE G72
Abstract: No abstract text available
Text: GaAs MMIC CGY 93P Data Sheet • • • Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped Package
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MW-16
Q62702-G72
GPW05969
smd MARKING CODE G72
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z Pb-Free Package is Available. Ordering Information Device LSBTH10T1G Marking Shipping LSBTH10T1G H8A 3000/Tape&Reel LSBTH10T3G H8A 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage
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LSBTH10T1G
3000/Tape
LSBTH10T3G
10000/Tape
SC-74
195mm
150mm
10Reel/Inner
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marking RD 38 TI
Abstract: TMT-50 dong guan 48
Text: TURNS RATIO: MECHANICAL DIMENSIONS: inch PRI:SEC ± 5% 1.255 ELECTRICAL CHARACTERISTICS:at 25 C MARKING: YY:YEAR WW:WEEK Transmit / Receive 1CT:2/1CT:1 @100kHz,50mV Inductance(Line Side): 1.2mH Min @100kHz,50mV Interwinding Capacitance: 35pF & 35pF Max @100kHz,50mV
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TMT50211CS
100kHz
TMD00485
marking RD 38 TI
TMT-50
dong guan 48
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Ta2O5 phase diagram
Abstract: EIA-535 Ta2O5
Text: TBJ Series Including CWR11 and COTS-Plus The TBJ Series encompasses five case sizes, A through E, corresponding to EIA535BAAC, the commercial industry standard. This series also offers molded body/compliant termination construction, polarity and capacitance marking. The
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CWR11
EIA535BAAC,
Ta2O5 phase diagram
EIA-535
Ta2O5
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Untitled
Abstract: No abstract text available
Text: Chip Marking Identification System Marking Proposed EIA Standard: Two Position Marking:* Alpha: 1st position significant figures of capacitance in pF Numerical: 2nd position decimal multiplier of capacitance NOTE: ¥ 0402, 0504, 0508, 0603, 0612, 0907 available unmarked only
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OCR Scan
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T511T
x1000
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J335
Abstract: marking MI C314
Text: ^External Dimensions unit: mm Fig. 2 Fig. 1 Fig. 3 Fig. 4 fO .5 7'°< I Cathode marking n ~ t w i to o 1.35*0A j 2.0mm j + Cathode marking Cathode marking c i 1.35 »°4 5.1*2? Fig. 5 Fig. 7 Fig. 6 Cathode marking J / mi o—x - j - r t — O o— W -J-W — O
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MT-25
TQ-220)
MT-100
J335
marking MI
C314
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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germanium photodiode PIN
Abstract: pin photodiode 1550 sensitivity photodiode PIN 1300 sensitivity pin Photodiode 1300 nm Germanium power t2856
Text: SIEMENS SFH 232 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings * Anode Marking: Tab at Package Bottom Operating and Storage Temperature Range T0P, Tstg .-40" to +80“C Reverse Voltage (VR) .15V
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 233 GERMANIUM PIN PHOTODIODE FEATURES Maximum Ratings • Anode Marking: Projection at Package Bottom Operating and Storage Temperature Range T0P, Ts tg -4 0 “ to +80°C Reverse Voltage (VR) . 10 V
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0007fci40
--SFH233
aZ3b32b
0007fc
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