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    MARKING W2 SOT23 TRANSISTOR Search Results

    MARKING W2 SOT23 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING W2 SOT23 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


    Original     		PDF BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps

    MARKING W2 SOT23 TRANSISTOR

    Abstract: sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR
    Text: 2SC2714 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS * High Current Gain Bandwidth Product fT=550MHz Package:SOT-23


    Original     		PDF 2SC2714 550MHz OT-23 CHARACTERIST12 600TYP 6614TYP 99221TYP 1102TYP MARKING W2 SOT23 TRANSISTOR sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR

    MARKING W2 SOT23 TRANSISTOR

    Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
    Text: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)


    Original     		PDF 2SC2712LT1 150mA OT-23 2SA1162 600TYP 6614TYP 99221TYP 1102TYP MARKING W2 SOT23 TRANSISTOR ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG

    MARKING W3 SOT23 TRANSISTOR

    Abstract: SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 MARKING W3 SOT23 TRANSISTOR SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23

    pn2222a fairchild

    Abstract: MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor
    Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSA06 MMBTA06 PZTA06 MPSA06 MMBTA06 OT-23 OT-223 PZTA06 pn2222a fairchild MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor

    MARKING W2 SOT23 TRANSISTOR

    Abstract: MMBA812M3 DO 127
    Text: SAMSUNG S E M I C O N D U C T O R . INC MMBA812M3 1 4 E _.? §7^41*12 0 0 0 7 2 3 5 :1 PNP EPITAXIAL SILICON TRANSISTOR^27 ^ i GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotfector-Emltter Voltage


    OCR Scan     		PDF MMBA812M3 OT-23 MMBT5086 MARKING W2 SOT23 TRANSISTOR MMBA812M3 DO 127

    Untitled

    Abstract: No abstract text available
    Text: S AM S UN G SEMICONDUCTOR I NC MMBA812M7 14E D §7*11,4142 0 0 0 75 3 1 , T | PNP EPITAXIAL SILICON TRANSISTOR T -^ l-O q GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MMBA812M7 OT-23 MMBT5086

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR . INC MMBA812M5 l^ E O 00Q7231 S | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF 00Q7231 MMBA812M5 MMBT5086 OT-23

    MARKING W2 SOT23 TRANSISTOR

    Abstract: No abstract text available
    Text: SAMSUNG SEMI CONDUCTOR INC NPN EPITAXIAL SILICON TRANSISTOR MMBC1623L4 :- T - ^ - H AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C - Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MMBC1623L4 OT-23 MMBC1623L3 MARKING W2 SOT23 TRANSISTOR

    MARKING W2 SOT23 TRANSISTOR

    Abstract: SAMSUNG SEMICONDUCTOR
    Text: SAMSUNG S EM ICONDUCTOR INC_14 E 0 J _ 7 Ü b41 MMBC1622D8 0007245 T I. NPN EPITAXIAL SILICON TRANSISTOR T -A ^ -lS AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cotlector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBC1622D8 OT-23 MMBC1622D6 100mA, MARKING W2 SOT23 TRANSISTOR SAMSUNG SEMICONDUCTOR

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBTA13 l^ E 00 072c10 4 | O J NPN EPITAXIAL SILICON TRANSISTOR _ L DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBTA13 OT-23 MMBT6427

    MARKING W2 SOT23 TRANSISTOR

    Abstract: MARKING 14E sot23 Transistor marking W2
    Text: SAMSUNG SEMICONDUCTOR INC MMBTA20 1ME D § 7 ^ l,m 4 2 00072^2 fl | T *if NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MMBTA20 OT-23 MMBT3904 MARKING W2 SOT23 TRANSISTOR MARKING 14E sot23 Transistor marking W2

    MARKING W2 SOT23 TRANSISTOR

    Abstract: MMBC1623L6
    Text: SAMSUNG SEMICONDUCTOR INC MMBC1623L6 lq E | 0007850 | 3 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MMBC1623L6 OT-23 MMBC1623L3 MARKING W2 SOT23 TRANSISTOR MMBC1623L6

    transistor marking SA p sot-23

    Abstract: MARKING 14E samsung f4 14e npn
    Text: SA M SUNG SEMICONDUCTOR INC MMBC1009F4 14E D _ | 7 ^ 4 1 4 2 0007240 0 j T ~ 3 / ~ /? NPN EPITAXIAL SILICON TRANSISTOR AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotlector-Emitter Voltage


    OCR Scan     		PDF MMBC1009F4 OT-23 transistor marking SA p sot-23 MARKING 14E samsung f4 14e npn

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBC1009F2 11E D | ? * ii,4 m 3 0 0 0 7 2 3 fl 2 | NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 9 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MMBC1009F2 OT-23

    MARKING W2 SOT23 TRANSISTOR

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBC1623L7 IM E D £ V ì b l l M a 0007251^5 ^ NPN EPITAXIAL SILICON TRANSISTOR -AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic


    OCR Scan     		PDF MMBC1623L7 OT-23 MMBC1623L3 MARKING W2 SOT23 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBT5087 . 14E ° | fl J | 0007575 PNP EPITAXIAL SILICON TRANSÌSTOR T LOW NOISE TRANSISTOR - 3 9 - ñ SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBT5087 OT-23 MMBT5086

    Untitled

    Abstract: No abstract text available
    Text: S A M S U N G SE MI C O N D U C T OR INC MMBTA64 D | 7^4142 0007300 3 | PNP EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBTA64 T-29-29 OT-23 MMBTA63

    MMBC1009F3

    Abstract: No abstract text available
    Text: .SAMSUNG SEMICONDUCTOR . INC MMBC1009F3 14E D | 7 1 k 4 1 »l2 0 0 0 7 5 3 1 4 f NPN EPITAXIAL SILICON TRANSISTOR T-31-X9 AM /FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 öC Characteristic Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF MMBC1009F3 T-31-X9 OT-23 MMBC1009F3

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG S EM I C ON D UC T OR IN C BCW33 14E D j 0007207 | NPN EPITAXIAL SILICON TRANSISTOR T liL N tK A L 2 rU n rU o C - ^ - l‘ 1 r l A I N o l d 1U H SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Sym bol C h a ra cte ristic ; Collector-Base Voltage ' Collector-Emitter Voltage


    OCR Scan     		PDF BCW33 OT-23

    Untitled

    Abstract: No abstract text available
    Text: S AM S UN G SEMICONDUCTOR INC MMBTA05 IME D | 7^4142 0007203 b | NPN EPITAXIAL SILICON TRANSISTOR T 'Ì f ì 'f ì DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cottector-Emltter Voltage


    OCR Scan     		PDF MMBTA05 OT-23 MPSA05

    MARKING W2 SOT23 TRANSISTOR

    Abstract: No abstract text available
    Text: SAM SUN G SEMICONDUCTOR INC MMBA811C6 14E D | 7 ^ 4 1 4 2 □ D0?a3ti 1 | PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF MMBA811C6 OT-23 MMBT5086 MARKING W2 SOT23 TRANSISTOR

    transistor 356 j

    Abstract: MARKING W2 SOT23 TRANSISTOR
    Text: SAMS UN G SE MIC ONDU CT OR INC MMBC1622D7 14E D | 7*11,4145 0007244 fl | NPN EPITAXIAL SILICON TRANSISTOR —— — — ;-: [T~<2q~ i<v AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C ‘ i Characteristic | Collector-Base Voltage


    OCR Scan     		PDF MMBC1622D7 OT-23 MMBC1622D6 100mA, transistor 356 j MARKING W2 SOT23 TRANSISTOR