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    MARKING S44 Search Results

    MARKING S44 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING S44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


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    PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


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    PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    L43 SMD

    Abstract: S43 SMD A70 SMD A73 smd A72 SMD l44 smd p74 smd SMD l43 s43 smd marking code S44 SMD
    Text: Schottky Barrier Diodes Multiple Terminals Part No. Marking Code BAT54TWS BAT54ADWS BAT54CDWS BAT54SDWS BAS40TWS BAS40ADWS BAS40CDWS BAS40SDWS BAS70TWS BAS70ADWS BAS70CDWS BAS70SDWS L4 L42 L43 L44 S40 S42 S43 S44 A70 A72 A73 A74 TST0051C-331F5 UW TST0073C-732F5


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    PDF BAT54TWS BAT54ADWS BAT54CDWS BAT54SDWS BAS40TWS BAS40ADWS BAS40CDWS BAS40SDWS BAS70TWS BAS70ADWS L43 SMD S43 SMD A70 SMD A73 smd A72 SMD l44 smd p74 smd SMD l43 s43 smd marking code S44 SMD

    S43 SMD

    Abstract: L43 SMD A70 SMD A72 SMD S43 MARKING SMD l43 S42 SMD S44 SMD A73 smd SMD L44
    Text: Schottky Barrier Diodes Multiple Terminals Part No. Marking Code BAT54TWS BAT54ADWS BAT54CDWS BAT54SDWS BAS40TWS BAS40ADWS BAS40CDWS BAS40SDWS BAS70TWS BAS70ADWS BAS70CDWS BAS70SDWS L4 L42 L43 L44 S40 S42 S43 S44 A70 A72 A73 A74 TST0051C-331F5 UW TST0073C-732F5


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    PDF BAT54TWS BAT54ADWS BAT54CDWS BAT54SDWS BAS40TWS BAS40ADWS BAS40CDWS BAS40SDWS BAS70TWS BAS70ADWS S43 SMD L43 SMD A70 SMD A72 SMD S43 MARKING SMD l43 S42 SMD S44 SMD A73 smd SMD L44

    pn0307

    Abstract: BSPD50N03S2-07 SPD50N03S2-07
    Text: SPD50N03S2-07 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 V RDS on 7.3 m ID 50 A P-TO-252-3-11 Type Package Ordering Code Marking SPD50N03S2-07 P-TO-252-3-11 Q67040-S4430


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    PDF SPD50N03S2-07 P-TO-252-3-11 P-TO-252-3-11 Q67040-S4430 PN0307 BSPD50N03S2-07, SPD50N03S2-07 pn0307 BSPD50N03S2-07

    marking S45

    Abstract: marking code s46 marking s47 C5101 code marking s47 marking s34 marking code s34 S53 MARKING S45 marking
    Text: LAH LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS GREEN CAP Miniaturized,High-Reliability,High-Ripple Capacitors ● ● 105˚C 2000hours High-reliability, high-ripple capacitors. Guarantees 2000 hours at 105℃. Miniaturized LAH LAG Marking color : White print on a black sleeve


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    PDF 2000hours 120Hz) 120Hz 2010/2011E marking S45 marking code s46 marking s47 C5101 code marking s47 marking s34 marking code s34 S53 MARKING S45 marking

    marking code s5 SOT23-6

    Abstract: BAS70WT marking S5 sot363 KL8 SOT-23
    Text: TM Micro Commercial Components SMALL SIGNAL SCHOTTKY DIODES MCC Part Number Peak Reverse Voltage Maximum Reverse Current PRV VR IR V V mA Maximum Forward Voltage Drop VF @ IF mV VF @ IF mA Surge Current Capacitance IFSM CTOT Marking Code Package Pin Identity


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    PDF KL2/L42 KL3/L43 KL4/L44 OT-23 marking code s5 SOT23-6 BAS70WT marking S5 sot363 KL8 SOT-23

    marking s34

    Abstract: 200V470 C5101 S43 MARKING Marking S55 Marking Code s33
    Text: LAX Ultra Long Life, High-Reliability Capacitors ● ● LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS GREEN CAP 105˚C 5000hours Ultra Long Life, high-reliability capacitors. Guarantees 5000 hours at 105° C. Long life LAX LAG Marking color : White print on a black sleeve


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    PDF 5000hours 120Hz) 200V470 2006/2007E 2010/2011E marking s34 C5101 S43 MARKING Marking S55 Marking Code s33

    C5101

    Abstract: S53 MARKING 178 08T
    Text: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS GREEN CAP High-Reliability, High-Ripple, Long Life Capacitors ● ● LAZ 105˚C 3000hours High-reliability, high-ripple, long life capacitors. Guarantees 3000 hours at 105° C. Long life LAZ LAH Marking color : White print on a black sleeve


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    PDF 3000hours 120Hz) 120Hz 2010/2011E C5101 S53 MARKING 178 08T

    MOSFET n0 sot-23

    Abstract: TN0200T
    Text: TN0200T N-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) 20 ID (A) 0.4 @ VGS = 4.5 V 0.6 0.5 @ VGS = 2.5 V 0.5 TO-236 (SOT-23) G 1 D 3 S 2 Top View TN0200T (N0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


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    PDF TN0200T O-236 OT-23) S-44204--Rev. 31-Mar-95 MOSFET n0 sot-23 TN0200T

    TP0101T

    Abstract: No abstract text available
    Text: TP0101T P-Channel Enchancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.65 @ VGS = –4.5 V –0.5 0.85 @ VGS = –2.5 V –0.4 TO-236 (SOT-23) G 1 3 S D 2 Top View TP0101T (P0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


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    PDF TP0101T O-236 OT-23) S-44205--Rev. 31-Mar-95 TP0101T

    TP0101T

    Abstract: No abstract text available
    Text: TP0101T P-Channel Enchancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.65 @ VGS = –4.5 V –0.5 0.85 @ VGS = –2.5 V –0.4 TO-236 (SOT-23) G 1 3 S D 2 Top View TP0101T (P0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


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    PDF TP0101T O-236 OT-23) S-44205--Rev. 31-Mar-95 TP0101T

    MOSFET n0 sot-23

    Abstract: TN0200T
    Text: TN0200T N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.4 @ VGS = 4.5 V 0.6 0.5 @ VGS = 2.5 V 0.5 TO-236 (SOT-23) G 1 D 3 S 2 Top View TN0200T (N0)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


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    PDF TN0200T O-236 OT-23) S-44204--Rev. 31-Mar-95 MOSFET n0 sot-23 TN0200T

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


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    PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04

    t2F sot 23

    Abstract: marking m2 KIC77
    Text: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D*T/T2/M/M2 Series KIC77A~D*T/M This IC is a system reset IC built in delay time circuit.


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    PDF KIC77A/B/C/D/E16 50T/T2/M/M2 KIC77A/B/C/D* KIC77A KIC77 240/50/100/200/400ms t2F sot 23 marking m2

    Untitled

    Abstract: No abstract text available
    Text: BAS40TW/ADW/CDW/SDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 2 1 SOT- 363


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    PDF BAS40TW/ADW/CDW/SDW OT-363 SC70-6L) BAS40TW BAS40ADW BAS40CDW BAS40SDW

    S45 marking

    Abstract: marking S45 DIODE S45 MARKING CODE R7 marking code S44 BAS40SDW BAS40RDW MARKING CODE R7 DIODE marking ADW BAS40CDW
    Text: BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA


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    PDF BAS40TW/ADW/CDW/SDW/RDW OT-363 SC70-6L) 2002/95/EC BAS40TW BAS40ADW BAS40xxx T/R13 S45 marking marking S45 DIODE S45 MARKING CODE R7 marking code S44 BAS40SDW BAS40RDW MARKING CODE R7 DIODE marking ADW BAS40CDW

    DIODE S45

    Abstract: BAS40ADW BAS40CDW BAS40SDW BAS40TW SC70-6L DIODE S43 S44 MARKING marking s43 marking S45
    Text: BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA


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    PDF BAS40TW/ADW/CDW/SDW/RDW OT-363 SC70-6L) BAS40TW BAS40ADW BAS40CDW BAS40xxx T/R13 DIODE S45 BAS40ADW BAS40CDW BAS40SDW BAS40TW SC70-6L DIODE S43 S44 MARKING marking s43 marking S45

    S43 MARKING

    Abstract: S44 MARKING marking S45
    Text: BAS40TW/ADW/CDW/SDW/RDW SURFACE MOUNT SCHOTTKY DIODE ARRAYS These devices feature electrically-isolated Schottky diodes connected in various configurations housed in a very small SOT-363 SC70-6L 4 FEATURES 5 6 Maximum forward voltage @ 10mA of 0.5V 3 Maximum leakage current @ 25V of 1.0uA


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    PDF BAS40TW/ADW/CDW/SDW/RDW OT-363 SC70-6L) 2002/95/EC BAS40TW BAS40ADW BAS40CDW BAS40SDW BAS40RDW BAS40xxx S43 MARKING S44 MARKING marking S45

    S44 MARKING

    Abstract: marking code aw BAS40SW BAS40AW BAS40AW-T1 BAS40CW BAS40CW-T1 BAS40SW-T1 BAS40W BAS40W-T1
    Text: BAS40W / AW / CW / SW WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability


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    PDF BAS40W OT-323, MIL-STD-202, OT-323 S44 MARKING marking code aw BAS40SW BAS40AW BAS40AW-T1 BAS40CW BAS40CW-T1 BAS40SW-T1 BAS40W-T1

    BAS40

    Abstract: BAS40A BAS40A-T1 BAS40C BAS40C-T1 BAS40S BAS40S-T1 BAS40-T1 s43 SOT23 S43 sot
    Text: BAS40 / A / C / S WTE POWER SEMICONDUCTORS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability


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    PDF BAS40 OT-23, MIL-STD-202, OT-23 BAS40A BAS40A-T1 BAS40C BAS40C-T1 BAS40S BAS40S-T1 BAS40-T1 s43 SOT23 S43 sot

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAS40WT/-04/-05/-06 Features x x x Pow Dissipation PD=200mW Tamb=25к Forward Current I F=200mA Breakdown Voltage VBR=40V


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    PDF BAS40WT/-04/-05/-06 200mW 200mA 40Volt OT-323 380mV 1000mV

    Untitled

    Abstract: No abstract text available
    Text: Snap-In Capacitors LL Grade B 43 502 Long service life Operation at temperatures up to 85 °C Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board Minus pole marking on case surface


    OCR Scan
    PDF KAL0274-A

    Untitled

    Abstract: No abstract text available
    Text: 32E I • Ô23fc.320 001707Ô IS IP BSP 60. BSP 62 PNP Silicon Darlington Transistors SIEMENS/ SPCLi SEMICONDS T - 3 3 « • High collector current • Low collector -emitter saturation voltage • Complementary types: BSP 50.BSP 52 NPN ) Marking O rdering co d e (1 2 -m m tape)


    OCR Scan
    PDF P1166 OT-223 Q62702 P1168 BSP60 BSP61 BSP62