TRANSISTOR marking ar code
Abstract: PNP Epitaxial Silicon Transistor sot223 pd 223 CZT7120 MARKING CODE 24 TRANSISTOR marking code RY SOT TRANSISTOR MARKING CODE RE marking RY SOT223 PNP TRANSISTOR marking pr IC MARKING CODE TA
Text: Central LIM E PR RY A N CZT7120 I TM Semiconductor Corp. SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT7120 PNP Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics
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CZT7120
CZT7120
OT-223
200mA
500mA
500mA,
14-November
TRANSISTOR marking ar code
PNP Epitaxial Silicon Transistor sot223
pd 223
MARKING CODE 24 TRANSISTOR
marking code RY SOT
TRANSISTOR MARKING CODE RE
marking RY SOT223
PNP TRANSISTOR marking pr
IC MARKING CODE TA
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C 38 marking code transistor
Abstract: CZT853 417 TRANSISTOR
Text: RY A IN IM EL PR Central CZT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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CZT853
CZT853
OT-223
CZT953
100mA
500mA
500mA
14-September
100mA,
C 38 marking code transistor
417 TRANSISTOR
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10 amp triac
Abstract: CQ223M marking code TC TC-25 amp 600 volt triac CQ223N
Text: RY A IN IM L RE Central CQ223M CQ223N P TM Semiconductor Corp. 1.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.
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CQ223M
CQ223N
OT-223
10-June
10 amp triac
CQ223M
marking code TC
TC-25 amp 600 volt triac
CQ223N
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MARKING 93 SOT-223
Abstract: sot-223 93 marking code 17 surface mount diode marking codes transistors sot-223 pd 223 marking 009 CZT7120 MARKING CODE 24 TRANSISTOR
Text: Central LIM E PR RY A N CZT7120 I TM Semiconductor Corp. SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT7120 PNP Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics
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CZT7120
CZT7120
OT-223
17-June
OT-223
MARKING 93 SOT-223
sot-223 93
marking code 17 surface mount diode
marking codes transistors sot-223
pd 223
marking 009
MARKING CODE 24 TRANSISTOR
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relay 30A pin configuration
Abstract: sot marking RY
Text: RY A IN CZDM1003N IM L RE P SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZDM1003N is a 3A, 100V N-channel enhancement-mode silicon MOSFET, designed for motor control and relay driver
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CZDM1003N
CZDM1003N
OT-223
11-December
INCZDM1003N
relay 30A pin configuration
sot marking RY
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CZT953
Abstract: 417 TRANSISTOR
Text: RY A IN IM EL PR Central CZT953 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT953 type is a high current PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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CZT953
CZT953
OT-223
CZT853
400mA
14-September
100mA,
50MHz
417 TRANSISTOR
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2SB772P
Abstract: SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA -500 -200 -150 -150 -150 -500 -200 -150 -150 -150 -500 -200 -600 -100 -100 -100 -600 -200 -600
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SC-62
2SB772P
SOT-23 marking 717
cht9435zpt
CH3906XPT
9435Z
CHT2907XPT
CH772PT
CH3906
CH772P
2SB772PT-E
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T8901
Abstract: SOT-39 9013 SOT-89 TS9013 sot39 sot-223 code marking
Text: $ TAIW AN TS9013 SEMICONDUCTOR pb RoHS 500mA Low Quiescent Current CMOS LDO CO M PLIANCE SO T -89 o 1 2 3 S O T -2 2 3 Pin D e fin itio n : P in D e fin itio n : 2 1. Input 1. G round 2. Input 3. O utpu t 2. G round 3. O utpu t 1 2 3 General Description
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TS9013
500mA
OT-89
OT-223
TS9Q13
TS9013
T8901
SOT-39
9013 SOT-89
sot39
sot-223 code marking
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Untitled
Abstract: No abstract text available
Text: SIEM EN S Verpackungshinweise Packing Information Jede Verpackungseinheit einer regulären Lieferung wird mit Informationen zu Her steller, Typ, Menge, Datum, Herstellungs ort, Charge, EGB-Empfindlichkeit usw. versehen. Diese Angaben zum Inhalt sind vorgeschrieben und beschreiben in unver
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E6325
2000/Karton
2000/carton
SIK00154
SIK00155
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AT120A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS 0ITÂ S y iI T BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Sem iconductors 1998 Oct 30 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes
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BAT120
AT120A
135106/00/02/pp8
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1N6095
Abstract: No abstract text available
Text: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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1N6095
1N6096
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Untitled
Abstract: No abstract text available
Text: [M U M L H & E ^ S i Final Electrical S pecifications u i LT1118-2.5/LT1118-2.85/LT1118-5 m TECHNOLOGY i_Qw I , Low D ropout, 800m A Source a n d Sink Regulators Fixed 2.5V, 2.85V, 5V O u tp u t q F e b ru a ry 1995 F€ATUR€S DCSCRIPTIOfl • R egulates W hile Sourcing or Sinking Current
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LT1118-2
5/LT1118-2
85/LT1118-5
85Voutput
551fl4bfi
DD117SS
5C168
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M MFT1N10E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T
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MMFT1N10E/D
MFT1N10E
OT-223
318E-04
O-261AA
OT-223
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25Q256
Abstract: No abstract text available
Text: PD-20478 rev. C 04/99 International Iö R Rectifier 20CJQ045 SCHOTTKY RECTIFIER 2 Amp SOT-223 M ajor Ratings and Characteristics Characteristics Description/Features 20CJQ045 Units 2.0 A l F Av Rectan9 ular 45 V RRM VF @ t p = 5^jssine V 390 @ 1 A p k ,T J = 1 25 °C
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PD-20478
20CJQ045
OT-223
25Q256
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DIODE SD51
Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Text: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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150-C
1N6097
1N6098
DIODE SD51
5817 SOD-123
bly 83
Motorola Switchmode
SD51
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P1F sot223
Abstract: SOT-223 P1f PNP marking NY sot-223 on marking RV* P1f marking RV* P1f motorola p1f ON MARKING P1F marking NY sot-223 MARKING P1F
Text: MOTOROLA Order this document by PZT2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar E p itaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for
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PZT2222AT1/D
OT-223
PZT2907AT1
PZT2222AT1
inch/1000
P1F sot223
SOT-223 P1f
PNP marking NY sot-223
on marking RV* P1f
marking RV* P1f
motorola p1f
ON MARKING P1F
marking NY sot-223
MARKING P1F
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transistor CG sot-223
Abstract: ah sot223
Text: MOTOROLA Order this document by BCP53T1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor BCP53T1 M o to ro la P re ferre d D e vic e This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for
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BCP53T1/D
OT-223
BCP56
BCP53T1
BCP53T1
inch/1000
BCP53T3
transistor CG sot-223
ah sot223
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NT 2955 ON transistor
Abstract: Marking 2955 transistor k 4212 fet FT2955E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium P o w er Field E ffe c t T ran sisto r P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M FT2955E M o to ro la P re fe rre d D e v ic e TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM
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OT-223
FT2955E
NT 2955 ON transistor
Marking 2955
transistor k 4212 fet
FT2955E
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95ag
Abstract: No abstract text available
Text: LT1118/LT111825 g - ^W \ L lI lM F A H # LTl 118-2.85/LTl 118-5 TECHNOLOGY Low Low D ro p o u t, 800m A, Source a n d Sink R egulators A d ju s ta b le a n d Fixed 2.5V, 2.85V, 5V O u tp u t Iq , FEATURES DESCFHFTIOn • ■ ■ ■ ■ ■ ■ ■ The LT 1118 fam ily of low dropout regulators has the
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LT1118/LT111825
85/LTl
vLT1005
LT1117
LT1120A
LT1121
1118fa
95ag
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42t1
Abstract: No abstract text available
Text: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS
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PZTA42T1/D
PZTA42T1
OT-223
42t1
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LP3962
Abstract: LP3965 lp3965-adj SOT223T T0263
Text: Semiconductor LP3962/LP3965 1.5A Fast Ultra Low Dropout Linear Regulators General Description Features The LP 3962/LP3965 series o f fast ultra low -dropout linear regulators operate from a +2 .5 V to +7.0V input supply. W ide range o f preset output voltage options are available. These
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LP3962/LP3965
LP3962/LP3965
150ml
LP3962
LP3965
lp3965-adj
SOT223T
T0263
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1mo 565
Abstract: lazb LP3964-ADJ lbpb LP3961 LP3964 LP3964ET-ADJ SOT223-5 LAND PATTERN SOT223T
Text: Semiconductor LP3961/LP3964 800mA Fast Ultra Low Dropout Linear Regulators General Description Features The LP 3961/LP3964 series o f fast ultra low -dropout linear regulators operate from a +2 .5 V to +7.0V input supply. W ide range o f preset output voltage options are available. These
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LP3961/LP3964
800mA
LP3961/LP3964
1mo 565
lazb
LP3964-ADJ
lbpb
LP3961
LP3964
LP3964ET-ADJ
SOT223-5 LAND PATTERN
SOT223T
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BF720T1
Abstract: SMD310
Text: MOTOROLA O rder this docum ent by BF720T1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 NPN SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Sym bol Value Unit Collector-Em itter Voltage
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BF720T1/D
BF720T1
318E-04,
O-261AA)
SMD310
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by BF720T1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 NPN SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Sym bol Value Unit Collector-Em itter Voltage
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BF720T1/D
BF720T1
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