pcb diagram welding inverter
Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive
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MIXA20W1200MC
20091002a
pcb diagram welding inverter
CIRCUIT diagram welding inverter
MIXA20W1200MC
marking W18
g14 DIODE marking
C5 marking diode
airconditioning inverter circuit
WELDING INVERTER DIAGRAM
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UC320
Abstract: CIRCUIT diagram welding inverter diode K14
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state
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MIXA20W1200MC
20110304b
UC320
CIRCUIT diagram welding inverter
diode K14
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Untitled
Abstract: No abstract text available
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coeficient of the on-state
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MIXA20W1200MC
20110304b
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MARKING HYNIX
Abstract: MARKING HYNIX Origin Country
Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration
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HY62LF16206A-LT12C
128Kx16bit
120ns
MARKING HYNIX
MARKING HYNIX Origin Country
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hynix hy
Abstract: HY62LF16206A HY62LF16206A-LT12C 48-TSOP1 MARKING HYNIX MARKING HYNIX Origin Country 48TSOP1
Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration
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HY62LF16206A-LT12C
128Kx16bit
48-TSOP1
120ns
hynix hy
HY62LF16206A
HY62LF16206A-LT12C
MARKING HYNIX
MARKING HYNIX Origin Country
48TSOP1
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Untitled
Abstract: No abstract text available
Text: HY62LF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No 05 06 History Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information
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HY62LF16201A
128Kx16bit
HY62QF16201A
HY62LF16201A
o6201A
HYLF621Ac
100ns
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hysf643
Abstract: No abstract text available
Text: HY62SF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 08 Icc1 Value change. 30mA -> 20mA Nov.22.2000 Final 09 Marking Information add tBLZ / tOLZ value is changed
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HY62SF16403A
256Kx16bit
HYSF643A
100ns
120ns
hysf643
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SM-1994
Abstract: No abstract text available
Text: HY62LF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No 03 04 History Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information
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HY62LF16101C
64Kx16bit
HY62QF16101C
HY62LF16101C
HY62LF1610F16101C
HYLF611Cc
100ns
SM-1994
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HY62SF16101C
Abstract: No abstract text available
Text: HY62SF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No 03 04 History Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information
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HY62SF16101C
64Kx16bit
powSF16101C
HYSF611Cc
100ns
120ns
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Untitled
Abstract: No abstract text available
Text: FLASH AS8FLC1M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10
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AS8FLC1M32
MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC1M32B
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hyuf643
Abstract: No abstract text available
Text: HY62UF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 09 Marking Information add tBLZ / tOLZ value is changed Output Load is redefined Isb, Isb1, Vdr, Iccdr are redefined
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HY62UF16403A
256Kx16bit
HY62UF103A
HYUF643A
hyuf643
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SMD MARKING CODE WE3
Abstract: 5962-0920503HXA A18 marking A3760 5962-0920502HYA 5962-0920503HX
Text: FLASH AS8FLC1M32 • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10 I/O11
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AS8FLC1M32
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
I/O17
I/O18
SMD MARKING CODE WE3
5962-0920503HXA
A18 marking
A3760
5962-0920502HYA
5962-0920503HX
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Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16 54
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MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC1M32
1Mx32,
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A20-A11
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC2M32
I/O16
I/O17
A20-A11
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Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC1M32
single120
HIP-66
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AS8FLC1M32BQT-120/Q
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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AS8FLC1M32
100ns
120ns
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
AS8FLC1M32BQT-120/Q
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AS8FLC2M32
Abstract: A3760
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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AS8FLC2M32
100ns
120ns
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
AS8FLC2M32
A3760
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Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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AS8FLC1M32
100ns
120ns
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
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Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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AS8FLC1M32
100ns
120ns
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
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Untitled
Abstract: No abstract text available
Text: FLASH PRELIMINARY AS8FLC1M32A Hermetic, Multi-Chip Module MCM FIGURE 1: PIN ASSIGNMENT (Top View) • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 59
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AS8FLC1M32A
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
I/O17
I/O18
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Untitled
Abstract: No abstract text available
Text: FLASH AS8FLC2M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact Factory Package Ceramic Quad Flat Pack Ceramic Hex Inline Pack MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 78 13 57 14 76 15 55 16 54
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AS8FLC2M32
MIL-PRF-38534,
64Kbyte
AS8FLC2M32B
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Untitled
Abstract: No abstract text available
Text: EtN UNTERNEHMEN VON Roederstein Keramik-Kondensatoren fiir die Untertialtungs-Elektronik Ceramic Capacitors for entertainment electronics Keram ische Scheibenkondensatoren, Klasse 2 C eram ic disc capacitors, class 2 Ausfiihrung / Design: Kennzeichnung / Marking:
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Untitled
Abstract: No abstract text available
Text: UMH10N IMH10A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH10N and IMH10A; H10 • • • UMH10N (UMT6) 2.0±0.2 3 U 2 M 1) package contains two independent
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UMH10N
IMH10A
SC-74)
IMH10A;
DTC123JKA)
SC-70)
SC-59)
UMH10N
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Untitled
Abstract: No abstract text available
Text: E R C 1 2 i . 2 A I Outline Drawings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q8 20MIN — : Features • •0— Hi gh surge current • 'J V£ M $ A • ffifflfitt ■ S/jv i Marking Compact size, lightweight
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28MIN
20MIN
I95t/R89)
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