FZT600
Abstract: MARKING npn TRANSISTOR 1k sot223
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 FZT600 ISSUE 3 FEBRUARY 1997 FEATURES * 2A continuous current * 140 VOLT VCEO * Guaranteed hFE Specified up to 1A TYPICAL CHARACTERISTICS C E 20k +-=10V V - Gain 0.90 + * I /I =100 8k 0.70
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OT223
FZT600
Collector40
100mA,
20MHz
FZT600
MARKING npn TRANSISTOR 1k sot223
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green ZDT6753 100V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SM-8 Features Mechanical Data • • Case: SM-8 8 LEAD SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. • NPN Transistor • BVCEO > 100
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ZDT6753
OT223)
300mV
J-STD-020
-100V
-300mV
MIL-STD-202,
DS33209
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 3 FEBRUARY 1997 FEATURES * 2A continuous current * 140 VOLT VCEO * Guaranteed hFE Specified up to 1A C 20k E Group B 1.00 PART MARKING DETAIL +-=10V FZT600 C V 16k 0.90 + * I /I =100
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OT223
FZT600
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ZXTN
Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2011G
OT223
OT223
ZXTN2011GTA
ZXTN2011GTC
ZXTN
ZXTN2011GTC
sot223 device Marking
ZXTN2011G
ZXTN2011GTA
Bv 42 transistor
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ZXTN2011G
Abstract: ZXTN2011GTA ZXTN2011GTC
Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2011G
OT223
OT223
ZXTN2011GTA
ZXTN2011GTC
ZXTN2011G
ZXTN2011GTA
ZXTN2011GTC
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ZX5T853G
Abstract: ZX5T853GTA ZX5T853GTC
Text: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC
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ZX5T853G
OT223
OT223
ZX5T853GTA
ZX5T853GTC
ZX5T853G
ZX5T853GTA
ZX5T853GTC
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ZXTN
Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010G
OT223
OT223
INFORMAT26100
ZXTN
ZXTN2010GTA
ZXTN2010G
ZXTN2010GTC
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ZX5T851G
Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T851G
OT223
OT223
ZX5T851G
ZX5T851GTA
ZX5T851GTC
Bv 42 transistor
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ZXTN2010GTA
Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010G
OT223
OT223
ZXTN2010GTA
ZXTN2010G
ZXTN2010GTC
Bv 42 transistor
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Untitled
Abstract: No abstract text available
Text: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTN2010G
OT223
OT223
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X5T851
Abstract: bv 42 TRANSISTOR equivalent
Text: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in
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ZX5T851G
OT223
OT223
522-ZX5T851GTA
ZX5T851GTA
X5T851
bv 42 TRANSISTOR equivalent
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SD2136 is designed for power application. FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .
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2SD2136
2SD2136
2SD2136L-x-T60-K
2SD2136L-x-T6C-K
2SD2136L-x-T6S-K
2SD2136G-x-AA3-R
2SD2136G-x-T60-K
2SD2136G-x-T6C-K
2SD2136G-x-T6S-K
OT-223
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FZT751Q
OT223
-300mV
FZT651Q
AEC-Q101
DS36963
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •
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FZT651Q
OT223
J-STD-020
300mV
MIL-STD-202,
DS36917
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DXT690B
Abstract: DXT690BP5 DXT690BP5-13
Text: A Product Line of Diodes Incorporated DXT690BP5 45V NPN HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = 45V IC = 3A; ICM = 6A
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DXT690BP5
OT223;
J-STD-020
MIL-STD-202,
DS31801
DXT690B
DXT690BP5
DXT690BP5-13
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T6790
Abstract: ZDT6790 TRANSISTOR C 3068
Text: A Product Line of Diodes Incorporated Green ZDT6790 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTOR IN SM-8 PACKAGE Features Mechanical Data • • • • • • • NPN Transistor BVCEO > 45 VCE sat < 100mV @ IC= 100mA Continuous Current IC = 2A
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ZDT6790
100mV
100mA
250mV
-500mA
AEC-Q101
OT223)
J-STD-020
DS33210
T6790
ZDT6790
TRANSISTOR C 3068
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DXT690BP5 45V NPN HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = 45V IC = 3A; ICM = 6A
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DXT690BP5
OT223;
J-STD-020
MIL-STD-202,
DS31801
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fzt 655
Abstract: FZT655 FZT755 DS33151 FZT655TA
Text: A Product Line of Diodes Incorporated Green FZT655 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V IC = 1A high Continuous Current Low Saturation Voltage Complementary PNP Type – FZT755
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FZT655
OT223
FZT755
AEC-Q101
OT223
J-STD-020
MIL-STD-202,
DS33151
fzt 655
FZT655
FZT655TA
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ZXTN25020DG
Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN25020DG
OT223
ZXTP25020DG
OT223
D-81541
ZXTN25020DG
TS16949
ZXTN25020DGTA
ZXTP25020DG
ON950
ZXTN25
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Untitled
Abstract: No abstract text available
Text: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor
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ZXTN25020DG
OT223
ZXTP25020DG
OT223
D-81541
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DXTN07100BP5 ADV AN CE I N FORM AT I ON 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm
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DXTN07100BP5
OT223;
J-STD-020
DS32023
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2d SMD PNP TRANSISTOR
Abstract: NB ad smd transistor 1ff TRANSISTOR SMD MARKING CODE SMD MARKING CODE FE sot89 H1 SOT-89 transistor rf smd transistor 5c sot-23 BC548 TRANSISTOR SMD TRANSISTOR Marking XB SOT-89 TRANSISTOR BC337 SMD smd dual diode marking code AH sot-23
Text: CENTRAL SEMICONDUCTOR 50E D nñnb3 CEN D D D Q S l l 3Gb SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 CMPT3906 CMPT4401 CMPT4403 CMPT5086 CMPT5087 CMPT5088
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DGDQS11
OT-23
350mW
cmpt918
2n918
cmpt2222a
2n2222a
cmpt2369
2n2369
cmpt2484
2d SMD PNP TRANSISTOR
NB ad smd transistor
1ff TRANSISTOR SMD MARKING CODE
SMD MARKING CODE FE sot89
H1 SOT-89 transistor rf
smd transistor 5c sot-23
BC548 TRANSISTOR SMD
TRANSISTOR Marking XB SOT-89
TRANSISTOR BC337 SMD
smd dual diode marking code AH sot-23
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1ff TRANSISTOR SMD MARKING CODE
Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369
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DDDQS11
OT-23
350mW
CMPT918
CMPT2222A
CMPT2369
CMPT2484
CMPT2907A
CMPT3640
CMPT3904
1ff TRANSISTOR SMD MARKING CODE
smd transistor 5c sot-23
NB ad smd transistor
SMD TRANSISTOR MARKING 6C
SMD TRANSISTOR MARKING 5c npn
smd dual diode marking code AH sot-23
BC548 TRANSISTOR SMD
smd diode ZENER marking code BC
marking code diode C1J SMD
SMD TRANSISTOR MARKING c1p
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SOT223 Package
Abstract: MARKING npn TRANSISTOR 1k sot223 MOTOROLA TRANSISTOR P1D
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value U nit Collector-Emitter Voltage Open Base
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PZTA42T1
OT-223
318E-04,
O-261AA
PZTA64T1
SOT223 Package
MARKING npn TRANSISTOR 1k sot223
MOTOROLA TRANSISTOR P1D
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