GEOY6461
Abstract: OHLY0598
Text: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 81 A Wesentliche Merkmale Features • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Rosa Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig
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Text: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 81 A Wesentliche Merkmale Features • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Rosa Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig
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Abstract: No abstract text available
Text: 2010-04-28 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 486 Features: • • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability Spectral match with silicon photodetectors UL Version available
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D-93055
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Abstract: No abstract text available
Text: 2010-04-28 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 486 Features: • • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability Spectral match with silicon photodetectors UL Version available
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D-93055
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IEC 62471 osram
Abstract: No abstract text available
Text: 2007-04-02 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 487 P Features: • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability High pulse handling capability Good spectral match to silicon photodetectors
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D-93055
IEC 62471 osram
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Abstract: No abstract text available
Text: 2010-11-29 GaAlAs Infrared Emitters 880 nm GaAlAs-IR-Lumineszenzdioden (880 nm) Version 1.0 SFH 484 Features: • • • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability UL version available Spectral match with silicon photodetectors
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D-93055
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Abstract: No abstract text available
Text: 2008-05-28 GaAlAs Infrared Emitters 880 nm GaAlAs-IR-Lumineszensdioden (880 nm) Version 1.0 SFH 485 Features: • • • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability UL version available Spectral match with silicon photodetectors
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D-93055
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Abstract: No abstract text available
Text: 2009-08-21 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 485 P Features: • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability Spectral match with silicon photodetectors Available on tape and reel (in Ammopack)
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D-93055
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Text: 2010-11-29 GaAlAs Infrared Emitters 880 nm GaAlAs-IR-Lumineszenzdioden (880 nm) Version 1.0 SFH 484 Features: • • • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability UL version available Spectral match with silicon photodetectors
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D-93055
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Abstract: No abstract text available
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant IRL 81 A gemäß OS-PCN-2011-003-A acc. to OS-PCN-2011-003-A Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung
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OS-PCN-2011-003-A
OS-PCN-2011-003-A
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DAS 001
Abstract: No abstract text available
Text: 2007-03-30 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 SFH 405 Features: • • • • Besondere Merkmale: Same package as SFH 305 Miniature package High reliability GaAs infrared emitting diode • • • • Applications • • • •
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D-93055
DAS 001
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Untitled
Abstract: No abstract text available
Text: 2007-03-30 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 LD 261 Features: • • • • Besondere Merkmale: GaAs infrared emitting diode High reliability Same package as BPX 81 Miniature package • • • • Applications • • • • •
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D-93055
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Untitled
Abstract: No abstract text available
Text: 2014-01-16 GaAlAs Light Emitting Diode 660 nm GaAlAs-Lumineszensdiode (660 nm) Version 1.1 SFH 4860 Features: Besondere Merkmale: • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Matches all Si-Photodetectors
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Text: 2007-12-07 GaAlAs Light Emitting Diode 660 nm GaAlAs-Lumineszensdiode (660 nm) Version 1.0 SFH 4860 Features: Besondere Merkmale: • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case • High reliability • Matches all Si-Photodetectors
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Abstract: No abstract text available
Text: 2011-03-14 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 LD 274 Features: • • • • Besondere Merkmale: Very highly efficient GaAs-LED High reliability Spectral match with silicon photodetectors Same package as SFH 484 • • • • Applications
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D-93055
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OHF04132
Abstract: MA103 OS-PCN-2011-003-A2
Text: 2012-11-15 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 / acc. to: OS-PCN-2011-003-A2 IRL 81 A Features: Besondere Merkmale: • High Power Infrared LED • Pink plastic package with lateral emission
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OS-PCN-2011-003-A2
OS-PCN-2011-003-A2
D-93055
OHF04132
MA103
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Untitled
Abstract: No abstract text available
Text: 2014-01-15 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.1 / acc. to: OS-PCN-2011-003-A2 IRL 81 A Features: Besondere Merkmale: • High Power Infrared LED • Pink plastic package with lateral emission
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OS-PCN-2011-003-A2
D-93055
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Untitled
Abstract: No abstract text available
Text: 2014-01-16 GaAlAs Light Emitting Diode 660 nm GaAlAs-Lumineszensdiode (660 nm) Version 1.1 SFH 464 E7800 Features: Besondere Merkmale: • Radiation without IR in the visible red range • Cathode is electrically connected to the case • • • • • Strahlung im sichtbaren Rotbereich ohne IR-Anteil
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E7800
D-93055
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Untitled
Abstract: No abstract text available
Text: 2008-08-11 GaAlAs Light Emitting Diode 660 nm GaAlAs-Lumineszensdiode (660 nm) Version 1.0 SFH 464 E7800 Features: Besondere Merkmale: • Radiation without IR in the visible red range • Cathode is electrically connected to the case • • • • • Strahlung im sichtbaren Rotbereich ohne IR-Anteil
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E7800
D-93055
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erni 41612
Abstract: Ge Spice ERNI 753
Text: 074533_Umschlag_A5_2010_d 17.10.2010 11:01 Uhr Seite U4U11 Katalog ERNI Electronics Das Technologiezentrum ERNI Electronics GmbH Seestrasse 9 73099 Adelberg/Germany Tel +49 71 66 50-0 Fax +49 71 66 50-282 [email protected] Europa Südamerika ERNI Electronics, Inc.
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U4U11
23230/USA
erni 41612
Ge Spice
ERNI 753
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2N1652
Abstract: 2N1653 MIL-STD-780 2N1651 Germanium power
Text: MIL-S-19500/219A EL a annrr ioaq û A r UlU itruu jTTn’n ner'nrw^u OU MIL-S-19500/219(SigC) 21 NOVEMBER 1961 SPECIFICATION TRANSISTOR, PNP, GERMANIUM, POWER, SWITCHING TYPES 2N1651, 2N1Ö52, 2N1653 QOW m np lu î.î Scope. This spécification covers the de
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MIL-S-19500/219A
mil-S-19500/219
2N1651,
2N1652,
2N1653
Ic-25A
2N1652
2N1653
MIL-STD-780
2N1651
Germanium power
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UN PUBLISH ED. COPYRIGHT - By - | TE CONNECTIVITY 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. 1 □1ST R E V IS IO N S HB H LTR G PART A PART B /- | f DESCRIPTIO N DATE CHANGE LOGO&ADD UNEIDENTFICATIQN EC0-12-00349B 4ADD CQC SYMBOL P-11-003756
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EC0-12-00349B
P-11-003756
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Untitled
Abstract: No abstract text available
Text: THE INFDRMATIDN CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TD BEL FUSE INC. AND SHALL NDT BE CDPIED, REPRODUCED DR DISCLOSED WITHOUT THE WRITTEN APPROVAL DF BEL FUSE INC. L :di p d l a r i t y CDLDR PIN 13 PIN 14 + YELLOW + GREEN - - RoHS 2002/95/EC LED2 PDLA RITY
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2002/95/EC
DC003
DC002
L834-1C1T-S7
L834-1C1T-S7
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038329
Abstract: No abstract text available
Text: IB M 0 3 8 3 2 9 P Q 6 IB M 0 3 8 3 2 9 N Q 6 256K x 32 S y n c h ro n o u s G ra p h ic s RAM Features • Fully synchronous; all signals registered on pos itive edge ot system clock. • Single 3.3V ± 0 .3 • 100-pin LQ FP 0.65m m lead pitch • Internal pipelined operation; colum n address
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cycles/16m
cycles/128m
038329
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