Untitled
Abstract: No abstract text available
Text: Radial Lead Capacitors Marking information/Ordering information Marking information All encapsulated capacitors are marked with:- Capacitance value, tolerance, rated d.c. voltage, dielectric, and where size permits Syfer logo. All moulded units are marked additionally with year and week of manufacture, and capacitance value on
|
OCR Scan
|
PDF
|
1000pF
------1N00
100pF
|
MARKing l4T
Abstract: T460 t930 ERA91-02 mat03
Text: E R A 9 1-02 0 .5A _ • * » - * » : O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER ■ t t * : Features m f r m , 5 m m t '^ m a «m ■ ^ T jv U ltra small package. Marking Possible fo r 5m m pitch a utom atic insertion. t> ? - □ - V : Ê
|
OCR Scan
|
PDF
|
ERA91
I95t/R89)
MARKing l4T
T460
t930
ERA91-02
mat03
|
ERA38
Abstract: irsy
Text: E R A 38 o.5A Outline Drawings FAST RECOVERY DIODE : Features • iti-a u : Marking S u p e r high speed sw itch in g • f f i ' J 5 m m l i 7 f £ » « ¡A U ltra sm all p a c k a g e . * 7 —□ — K : Ö C o lo r code : W hite Possible fo r 5 m m pitch a u to m a tic insertion
|
OCR Scan
|
PDF
|
ERA38
irsy
|
ERA85-009
Abstract: era85
Text: ERA85-009HA ; Outline Drawings S CHO TTKY BARRIER DIO DE □yHfc »V-P*-* \ +► \ / / f 0.56 f 1. .IsL 25MN. 25ML • ¡ î t ë ' Features • Vk ■ I I jk Low W : Marking S u p e r high speed s w itc h in g . ■■■■I 9 oi û H igh reliability by planer d e s ig n .
|
OCR Scan
|
PDF
|
ERA85-009
E23fl712
era85
|
A323
Abstract: ERA83-006 era83 MARKING a322
Text: ERA83-006 i A * ± 'l'W 3? 4 * - V : Outline Drawings SCHO TTKY BARRIER DIODE Features • ifeVF : Marking Lo w V f tt 7 S u p e r h ig h speed s w itc h in g . Voltage class œV n 7 h Nq ¥ 4 * Lot No. O * H ig h re lia b ility by p la n e r d e s ig n .
|
OCR Scan
|
PDF
|
ERA83-006
A323
era83
MARKING a322
|
jeida dram 88 pin
Abstract: No abstract text available
Text: M I lt^ P n N M T8D88C132 1 MEG x 32, 2 MEG x 16 IC D R AM C AR D IC DRAM CARD 4 MEGABYTES 1 MEG x 32, 2 MEG x 16 PIN ASSIG N M EN T End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access PIN * SYMBOL PIN# Vss 31 NC 61 2 DQ0 32
|
OCR Scan
|
PDF
|
T8D88C132
88-pin
128ms
jeida dram 88 pin
|
ERA83-006
Abstract: No abstract text available
Text: ERA83-006 i A * ± 'l'W 3? 4 * - V : Outline Drawings SCHO TTKY BARRIER DIODE Features • ifeVF : Marking Lo w V f tt 7 S u p e r h ig h speed s w itc h in g . Voltage class œV n 7 h Nq ¥ 4 * Lot No. O * H ig h re lia b ility by p la n e r d e s ig n .
|
OCR Scan
|
PDF
|
ERA83-006
|
era85 diode
Abstract: No abstract text available
Text: '> a ’y | *+— Y • : Outline Drawings SCHOTTKY BARRIER DIODE Features • ftV P Low vF : Marking • 7>4'V*'s*f x d S u p e r h ig h speed s w itc h in g . HECfc r a ■ ■ ■¥ 9 01 a H ig h re lia b ility by p la n e r d e s ig n , • m m -h'J- § K ffi A T O
|
OCR Scan
|
PDF
|
ERA85-009
era85 diode
|
DS275
Abstract: os275 DS275E DS275S SN75154
Text: DS275 DALLAS s e m ic o n d u c to r DS275 Line-Powered RS-232 Transceiver Chip FEATURES PIN ASSIGNMENT • L o w -p o w e r serial transm itter/receiver for b a tte ry backed system s • Transm itter steals pow er from receive signal line to save power • U ltra -lo w static current, even when connected to
|
OCR Scan
|
PDF
|
ds275
RS-232
RS-232-E
DS275S)
DS275
DS275S
DS275E
14-pin
os275
SN75154
|
SMEW
Abstract: CTG-32R CTG-34S CTG34S 2nd year f.a CTG22r CTG-34 marking CTG ctg22s CTG-22R
Text: M SANKEN ELECTRIC CO LTD 35E D B L ' ^ ltra Fast Recovery Diodes 7 ? m 000D817 7 • S A K J ‘p ¿ 3-07 E V rm :7 0 ~ 400V E lo :5 .0 ~ 2 0 A 1 CTG rsm V Type NoN V (V ) 70 70 200 200 400 400 70 70 200 200 300 300 400 400 70 70 200 200 300 300 400
|
OCR Scan
|
PDF
|
7W741
tj-140
CTG-11S
CTG-11
CTG-12S
CTG-12R
CTG-14S
CTG-14R
CTG-21S
CTB-34/34S/34M,
SMEW
CTG-32R
CTG-34S
CTG34S
2nd year f.a
CTG22r
CTG-34
marking CTG
ctg22s
CTG-22R
|
DF40PC3
Abstract: J532 SHINDENGEN DIODE
Text: Schottky Barrier Diode Twin Diode mnm DF40PC3 o u t lin e 30V 40A F e a tu re • SMD • î • SM D 3 V f = 0 .4 V • U ltra-Low V f=0.4V • High lo R ating-Sm all-R K G M a in U s e • /w x u -æ s B m t • Reverse connect protection for DC pow er source
|
OCR Scan
|
PDF
|
DF40PC3
STO-220
I-111,
J532-1
DF40PC3
J532
SHINDENGEN DIODE
|
Untitled
Abstract: No abstract text available
Text: M SANKEN ELECTRIC CO LTD 35E D B L ' ^ltra Fast Recovery Diodes 7 ? m 000D817 7 • S A K J P 2 3 -Ö 7 E V rm : 70~ 400V Elo:5.0~ 20A CTG Type N o N 70 70 200 200 400 400 70 70 200 200 300 300 400 400 70 70 200 200 300 300 400 400 Tj CC If s m A) Tstg
|
OCR Scan
|
PDF
|
000D817
CTG-11
CTG-12S
CTG-12R
CTG-14S
CTG-14R
CTG-21S
CTG-21R
CTG-22S
CTG-22R
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mwm o u t lin e Package ! E-pack DE10PC3 U nitt mm W eight 0 2 6 « (T yp r " iMi 30 V 10A Feature • SM D • SM D • ÎS < 6 V f = 0 .4 V • U ltra-Low V f= 0 .4 V Type No. Main Use • Reverse connect protection for
|
OCR Scan
|
PDF
|
DE10PC3
50IIz
J532-1)
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5PC3 Unit-mm Weight 0.326g Typ 30V 5A Feature • SM D • SMD • î 2 ® V f =0.4V • U ltra-Low V f=0.4V • i J 'S = À l; j S î§ M • High lo R a tin g -S m all-PK G Main Use *y î ÿ x U - J i f ê K i h
|
OCR Scan
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: /A m RF/Microwave NPO Capacitors Ultra Low ESR, “U” Series, NPO Chip Capacitors G EN ER A L IN FORM ATION “U ” Series capacitors are NPO chip capacitors specially designed for “U ltra” low ESR for applications in the communication market. They
|
OCR Scan
|
PDF
|
100PF
300PF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode mtmm Single Diode o u t l in e D3FP3 U n it-m m W eight 0.16g T yp Package : 2F 30V 3A il mm Feature Q>- S m all S M D • Î bÎS V f=0.4V U ltra -L o w V f= 0 .4 V Main Use • K u / x U — ïÉ f ë B S ih • R everse c o n n e c t p ro te c tio n fo r
|
OCR Scan
|
PDF
|
|
smd diode marking U1
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10PC3 Unit-mm Weight 0.326g Typ 30 V 10A Feature • SMD • SMD • î 2 ® V f =0.4 V • U ltra -L o w V f=0.4V • iJ 'S = À l; jS î § M • High lo R a tin g -S m a ll-P K G Main Use
|
OCR Scan
|
PDF
|
DE10PC3
--25C
smd diode marking U1
|
smd kir
Abstract: DIODE MARKING 9Y smd code marking book DIODE SMD CODE MARKING LG smd diode code 1_b DG1J10A J532 smd diode schottky code marking 1A smd code marking vk YJ-7
Text: Schottky Barrier Diode Single Diode m tm DG1J10A 100V n • iiS'JviySMD Weight 0.011 g Typ 1A 3.5 1 U ltra -sm all S M D • fílR = 1 L o w Ir =100|j A m 100/l/A (?) CD r • i2j®sy=0.8mm • U nit-m m Package : G 1F Feature a OUTLINE 1 1J71 1 QD°
|
OCR Scan
|
PDF
|
DG1J10A
11J71
12-iiir
smd kir
DIODE MARKING 9Y
smd code marking book
DIODE SMD CODE MARKING LG
smd diode code 1_b
DG1J10A
J532
smd diode schottky code marking 1A
smd code marking vk
YJ-7
|
smd code marking LF sot23
Abstract: Js SMD MARKING CODE SOT23 L9 BAT721C BAT721 BAT721A diode smd JS 8 BAT721C BAT721S smd diode code A2 smd code marking js
Text: Philips Semiconductors Product specification Schottky barrier double diodes BAT721 series PINNING FEATURES • U ltra high s w itc h in g s p e e d BAT721 PIN • L o w fo rw a rd v o lta g e • G u a rd ring p ro te c te d • S m a ll p la s tic S M D p a c k a g e .
|
OCR Scan
|
PDF
|
BAT721
BAT721A
BAT721C
BAT721S
BAT721
smd code marking LF sot23
Js SMD MARKING CODE SOT23
L9 BAT721C
diode smd JS 8
smd diode code A2
smd code marking js
|
DIODE marking 7BA
Abstract: sg 7ba silent relay H3 marking CSA22 diode marking code H5 relay low profile
Text: cP r ilT C T I THE p o s s i b i l i t i e s « he i nfi ni te JSILENT POWER RELAY 1 POLE—10 A LOW PROFILE TYPE IFTR-H3 SERIES • FEATURES • Pin co m p a tib le w ith w id e ly used V S and FTR -H1 series p o w e r relays • U ltra sile n t relay w ith pa tented un iq ue U -sh ap e spring. N oise
|
OCR Scan
|
PDF
|
250VAC,
UL508,
DIODE marking 7BA
sg 7ba
silent relay
H3 marking
CSA22
diode marking code H5
relay low profile
|
es marking, diode
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV229 VCO FOR UHF BAND RADIO • • U nit in mm U ltra Low Series Resistance : rs = 0.2fl Typ. Useful for Small Size Set M A X IM U M + 0.2 1.25 - OJ M . R ATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage
|
OCR Scan
|
PDF
|
1SV229
es marking, diode
|
1sv239
Abstract: X10016
Text: TOSHIBA 1SV239 Variable Capacitance Diode Unit in mm Silicon Epitaxial Planar Type VCO For UHF Ratio Features • U ltra L o w S eries R esistan ce : rs = 0.44£2 Typ. • Useful fo r Sm all Size S et o. i: Absolute Maximum Ratings (Ta = 25 C) CHARACTERISTIC
|
OCR Scan
|
PDF
|
1SV239
V/C10V
1sv239
X10016
|
Untitled
Abstract: No abstract text available
Text: / " T L i LTC1841 /LTC1842/LTC1843 TECHNOLOGY U ltralow Pow er Dual C o m p a ra to rs w ith R e fe re nce n t i A ß _ F€flTUR€S DCSCRIPTIOn • Ultralow Quiescent Current: 3.5|jA Typ ■ Open-Drain Outputs Typically Sink Greater Than 20mA ■ Wide Supply Range: LTC1841
|
OCR Scan
|
PDF
|
LTC1841
/LTC1842/LTC1843
LTC1841)
1841/LTC1842/LTC1843are
LTC1842/LTC1843)
LTC1541/LTC1542
LTC1541)
10OOpF
LT1634
10ppm/Â
|
Untitled
Abstract: No abstract text available
Text: BCcomponenls Product specification U ltra p re cisian leaded r e s is t o r s FEATURES • Superior thin film technology • Exceptional low TC: ±02 to ±10 ppm/K • Super tight tolerance: ±0,01 to ±0,25% • Exceptional overall stability: class 0,02 • W ide ultra precision range: 22 f l to 301 k£2
|
OCR Scan
|
PDF
|
|