L693 CERAMIC, FILLED FUSE
Abstract: DEF-133 sand filled DEF-63-A
Text: LAST UPDATED: August 22, 2007 L693 CERAMIC, FILLED FUSE These size 0 32mm x 6.3mm , sand filled, standard fuse links are of the highest quality, having a category of duty of 440 Va.c., 230 Vd.c. (maximum prospective overload 33,000 A at 0.3 pf and 440 Va.c. or 230 Vd.c.) (Time
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015ms.
DEF-63-A
DEF-133
L693/CURRENT
L693 CERAMIC, FILLED FUSE
DEF-133
sand filled
DEF-63-A
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DEF-133
Abstract: L693 CERAMIC, FILLED FUSE sand filled DEF-63-A
Text: LAST UPDATED: March 13, 2001 L693 CERAMIC, FILLED FUSE These size 0 32mm x 6.3mm , sand filled, standard fuse links are of the highest quality, having a category of duty of 440 Va.c., 230 Vd.c. (maximum prospective overload 33,000 A at 0.3 pf and 440 Va.c. or 230 Vd.c.) (Time
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015ms.
DEF-63-A
DEF-133
L693/CURRENT
DEF-133
L693 CERAMIC, FILLED FUSE
sand filled
DEF-63-A
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L693 CERAMIC, FILLED FUSE
Abstract: sand filled DEF-63-A DEF-133 DEF63 133 MARKING
Text: LAST UPDATED: March 13, 2001 L693 CERAMIC, FILLED FUSE These size 0 32mm x 6.3mm , sand filled, standard fuse links are of the highest quality, having a category of duty of 440 Va.c., 230 Vd.c. (maximum prospective overload 33,000 A at 0.3 pf and 440 Va.c. or 230 Vd.c.) (Time
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Original
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015ms.
DEF-63-A
DEF-133
L693/CURRENT
L693 CERAMIC, FILLED FUSE
sand filled
DEF-63-A
DEF-133
DEF63
133 MARKING
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Untitled
Abstract: No abstract text available
Text: Product specification FMMTL619 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE sat =160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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FMMTL619
OT-23
125mA*
200mA,
500mA,
100MHz
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SMD Transistor 1020
Abstract: marking l69 FMMTL619
Text: Transistors IC SMD Type Medium Power Transistor FMMTL619 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE sat =160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
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FMMTL619
OT-23
125mA*
200mA,
500mA,
100MHz
SMD Transistor 1020
marking l69
FMMTL619
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H 455E
Abstract: 455E L345 l365
Text: P03113 News N°0390/3 020605 P.C.B. connectors Female sockets L 355 100 11 L 355 100 21 Vertical without flange Vertical with brackets Spacing 5.08 mm .200" 1,2 x 0,55 x 4,2 mm Pin .047" x .022" x .165" Spacing 5.08 mm .200" 1,2 x 0,55 x 4,2 mm Pin .047" x .022" x .165"
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P03113
H 455E
455E
L345
l365
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455g
Abstract: L345 255 312 11 000 P03100
Text: P03100 News N°0390/5 020605 P.C.B. connectors Female plugs L 355 300 11 L 355 300 21 Horizontal without flanges Horizontal with brackets Spacing 5.08 mm .200" 1,2 x 0,55 x 4,2 mm Pin .047" x .022" x .165" Spacing 5.08 mm .200" 1,2 x 0,55 x 4,2 mm Pin .047" x .022" x .165"
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P03100
455g
L345
255 312 11 000
P03100
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BSP149 l6906
Abstract: tr d400 L6327
Text: BSP149 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 200 V RDS on ,max 3.5 W IDSS,min 0.14 A • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223
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BSP149
PG-SOT223
BSP149
PG-SOT223
BSP149 l6906
tr d400
L6327
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BSP129
Abstract: No abstract text available
Text: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features VDS • N-channel 240 V 6 W 0.05 A RDS on ,max • Depletion mode IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101
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BSP129
IEC61249221
PG-SOT223
BSP129
PG-SOT223
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tr d400
Abstract: D400 BSP149 d400 f
Text: BSP149 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 200 V RDS on ,max 3.5 W IDSS,min 0.14 A • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223
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BSP149
PG-SOT223
BSP149
PG-SOT223
tr d400
D400
d400 f
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PDF
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L6327
Abstract: No abstract text available
Text: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features VDS • N-channel 240 V 6 W 0.05 A RDS on ,max • Depletion mode IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101
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BSP129
PG-SOT223
BSP129
PG-SOT223
L6327
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TRANSISTORS 132 GD
Abstract: BSP135 L6327 BSP135 d 132 smd diode smd diode g6
Text: BSP135 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 600 V RDS on ,max 60 W IDSS,min 0.02 A • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101
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BSP135
PG-SOT223
BSP135
PG-SOT223
TRANSISTORS 132 GD
BSP135 L6327
d 132 smd diode
smd diode g6
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TRANSISTORS 132 GD
Abstract: d 132 smd diode D012
Text: BSP135 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 600 V RDS on ,max 60 W IDSS,min 0.02 A • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101
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BSP135
PG-SOT223
BSP135
PG-SOT223
TRANSISTORS 132 GD
d 132 smd diode
D012
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D001A
Abstract: bsp135
Text: BSP135 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 600 V RDS on ,max 60 W IDSS,min 0.02 A • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101
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BSP135
IEC61249221
PG-SOT223
BSP135
PG-SOT223
D001A
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Untitled
Abstract: No abstract text available
Text: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features VDS • N-channel 240 V 6 W 0.05 A RDS on ,max • Depletion mode IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101
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BSP129
PG-SOT223
BSP129
PG-SOT223
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Untitled
Abstract: No abstract text available
Text: LM2937-2.5, LM2937-3.3 www.ti.com SNVS015E – FEBRUARY 1998 – REVISED APRIL 2013 LM2937-2.5, LM2937-3.3 400mA and 500mA Voltage Regulators Check for Samples: LM2937-2.5, LM2937-3.3 FEATURES 1 • 2 • • • • • • • Fully Specified for Operation Over −40°C to
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LM2937-2
LM2937-3
SNVS015E
400mA
500mA
400mA
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l69b
Abstract: L69B SOT-223 L68B
Text: LM2937-2.5, LM2937-3.3 www.ti.com SNVS015E – FEBRUARY 1998 – REVISED APRIL 2013 LM2937-2.5, LM2937-3.3 400mA and 500mA Voltage Regulators Check for Samples: LM2937-2.5, LM2937-3.3 FEATURES 1 • 2 • • • • • • • Fully Specified for Operation Over −40°C to
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LM2937-2
LM2937-3
SNVS015E
400mA
500mA
l69b
L69B SOT-223
L68B
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l69b
Abstract: L69BW WEOS61089-17 Wayon Overvoltage Protector 100V T-950 thyristor firing circuit GR-1089-CORE V210S 310S2
Text: File No.: W0102003 File Version: B Part Number: THYRISTOR PROGRAMMABLE SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO., LTD. OVERVOLTAGE PROTECTOR No.1001, Shiwan 7 Road, Pudong District, Shanghai, P.R.China.201202 Tel: 86-21-50310888 Fax: 86-21-50757680 Email: [email protected]
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W0102003
-167V
10/1000us
150mA
2/10s,
-100A,
-100V,
220nF
WEOS61089-17
-170V
l69b
L69BW
WEOS61089-17
Wayon
Overvoltage Protector 100V
T-950
thyristor firing circuit
GR-1089-CORE
V210S
310S2
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H61089B
Abstract: P61089B
Text: P61089B DUAL PROGRAMMABLE THYRISTOR TRANSIENT VOLTAGE SUPPRESSOR P61089B General Description This device has been especially designed to protect 2 new high voltage, as well as classical SLICs, against transient overvoltages. Positive overvoltages are clamped by 2 diodes. Negative surges are suppressed by 2 thyristors, their
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P61089B
UL1950,
01-Aug-11
H61089B
P61089B
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L69AW
Abstract: l69a diode MARKING CODE CG rs47 WEOS61089 W0102002 WEOS61089-12 48v 100a T-950 thyristor firing circuit
Text: File No.: W0102002 File Version: B Part Number: THYRISTOR PROGRAMMABLE SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO., LTD. OVERVOLTAGE PROTECTOR No.1001, Shiwan 7 Road, Pudong District, Shanghai, P.R.China.201202 Tel: 86-21-50310888 Fax: 86-21-50757680 Email: [email protected]
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W0102002
-120V
10/1000us
150mA
220nF
WEOS61089-12
-120V
L69AW
L69AW
l69a
diode MARKING CODE CG
rs47
WEOS61089
W0102002
WEOS61089-12
48v 100a
T-950
thyristor firing circuit
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PDF
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WEOS61089
Abstract: diode MARKING CODE CG 50s MARKING CODE T-950 GR-1089-CORE L69W Wayon
Text: File No.: W0102001 File Version: B Part Number: THYRISTOR PROGRAMMABLE SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO., LTD. OVERVOLTAGE PROTECTOR No.1001, Shiwan 7 Road, Pudong District, Shanghai, P.R.China.201202 Tel: 86-21-50310888 Fax: 86-21-50757680 Email: [email protected]
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W0102001
10/1000us
150mA
WEOS61089
WEOS61089
diode MARKING CODE CG
50s MARKING CODE
T-950
GR-1089-CORE
L69W
Wayon
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K68A
Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E
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OCR Scan
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SC-59
DO-35
SC-63)
T0-220AB
K68A
a1f4m
A1A4M
R1Ik
N1A4M
2SK104
2SA1138
a1l4m
n1f4m
2SD1557
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FA1A4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters 2 .8 Resistor B u ilt-in T Y P E - . 0.2 Q—/V W " R i = 1 0 k Î2 Rl 0. 65Î .J
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE GA1A4Z A MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistor Built-in TYPE in millimeters o—VW Ri ='10 left Ri • Complementary to G N 1A 4Z ABSOLUTE M AXIM UM RATINGS
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150oltage-V
1988M
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