Untitled
Abstract: No abstract text available
Text: Package Details - SOT-563 Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: 3-4 Character Alpha/Numeric Code. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R3 (5-November 2007)
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OT-563
EIA-481-1-A
25-April
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marking code 333
Abstract: No abstract text available
Text: Package Details - SOT-563 Mechanical Drawing Lead Code: Reference individual device datasheet. Part Marking: 3-4 Character Alpha/Numeric Code. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R3 (5-November 2007)
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OT-563
EIA-481-1-A
26-October
marking code 333
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marking code 333
Abstract: MARKING 213 MARKING 333 Marking 34
Text: Package Details SOT-563 Case Mechanical Drawing Lead Code: Part Marking: 3-4 Character Alpha/Numeric Code Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R4 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details
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OT-563
EIA-481-1-A
marking code 333
MARKING 213
MARKING 333
Marking 34
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Untitled
Abstract: No abstract text available
Text: SBR130SV NEW PRODUCT 1.0A SBR SUPER BARRIER RECTIFIER Features Mechanical Data • Low Leakage Current Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound.
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SBR130SV
OT563
J-STD-020
MIL-STD-202,
SBR1U30SV
DS35407
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Untitled
Abstract: No abstract text available
Text: SBR1U30SV 1.0A SBR SUPER BARRIER RECTIFIER Features Mechanical Data • Low Leakage Current Excellent High Temperature Stability Patented Super Barrier Rectifier Technology Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound.
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SBR1U30SV
OT563
J-STD-020
MIL-STD-202,
DS35028
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Untitled
Abstract: No abstract text available
Text: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been
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UM5304EEXF
UM5304EEAF
UM5304EEBF
UM5304EECF
SC70-6/SC88/SOT363
SC89-6/SOT563/SOT666
TSOP-6/SOT23-6
UM5304EEXF
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Untitled
Abstract: No abstract text available
Text: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been
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UM5304EEXF
UM5304EEAF
UM5304EEBF
UM5304EECF
SC70-6/SC88/SOT363
SC89-6/SOT563/SOT666
TSOP-6/SOT23-6
UM5304EEXF
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Untitled
Abstract: No abstract text available
Text: UM5204EEXF Quad Channel Low Capacitance ESD Protection Array UM5204EEAF UM5204EEBF UM5204EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5204EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been
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UM5204EEXF
UM5204EEAF
UM5204EEBF
UM5204EECF
SC70-6/SC88/SOT363
SC89-6/SOT563/SOT666
TSOP-6/SOT23-6
UM5204EEXF
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Untitled
Abstract: No abstract text available
Text: UESD55B Quad Line ESD Protection Diode Array UESD55B SC89-6 / SOT563 / SOT666 General Description The UESD55B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional
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UESD55B
UESD55B
SC89-6
OT563
OT666
UESD55
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Untitled
Abstract: No abstract text available
Text: UESD56B 5 Line ESD Protection Diode Array UESD56B SC89-6 / SOT563 / SOT666 General Description The UESD56B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional
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UESD56B
UESD56B
SC89-6
OT563
OT666
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SC89-6/SOT563/SOT666
Abstract: No abstract text available
Text: UESD6V8L5B Low Capacitance 5 Line ESD Protection Diode Array UESD6V8L5B SC89-6 / SOT563 / SOT666 General Description The UESD6V8L5B of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium, It is unidirectional device and
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SC89-6
OT563
OT666
SC89-6/SOT563/SOT666
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NST30010MXV6T1G
Abstract: pnp matched pair
Text: NST30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST30010MXV6T1G
OT563
NST30010MXV6/D
NST30010MXV6T1G
pnp matched pair
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Untitled
Abstract: No abstract text available
Text: NST30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST30010MXV6T1G
OT563
NST30010MXV6/D
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Untitled
Abstract: No abstract text available
Text: NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need
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NST30010MXV6T1G,
NSVT30010MXV6T1G
OT563
NST30010MXV6/D
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d3 marking
Abstract: R3 marking code Common Anode dual Schottky Rectifier d3marking
Text: CMLSH2-4LA CMLSH2-4LS CMLSH2-4LC CMLSH2-4LSB SURFACE MOUNT DUAL PAIR, LOW VF SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4L Series consists of Dual pairs of Common Anode, Common Cathode, and In-Series Low VF Schottky
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OT-563
OT-563
20-January
d3 marking
R3 marking code
Common Anode dual Schottky Rectifier
d3marking
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d3marking
Abstract: d3 marking
Text: CMLSH2-4LA CMLSH2-4LS CMLSH2-4LC CMLSH2-4LSB w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL PAIR, LOW VF SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4L series consists of dual pairs of common anode, common cathode, and in-series low VF Schottky diodes,
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OT-563
d3marking
d3 marking
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Untitled
Abstract: No abstract text available
Text: SPICE MODEL: 2N7002V/VA 2N7002V/VA NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed
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2N7002V/VA
OT-563
J-STD-020C
2N7002V
2N7002VA
DS30448
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Untitled
Abstract: No abstract text available
Text: SPICE MODEL: 2N7002V/VA 2N7002V/VA Pb DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Lead-free Features • · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed
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2N7002V/VA
AEC-Q101
OT-563
DS30448
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Untitled
Abstract: No abstract text available
Text: CMLSH2-4LA CMLSH2-4LC CMLSH2-4LS SURFACE MOUNT SILICON DUAL PAIR, LOW VF SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4LA series consists of dual pairs of common anode, common cathode, and in-series low VF Schottky diodes
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OT-563
14-February
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common anode schottky power
Abstract: d3 marking marking code 18 surface mount diode CMLSH2-4LA
Text: CMLSH2-4LA CMLSH2-4LC CMLSH2-4LS SURFACE MOUNT DUAL PAIR, LOW VF SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4LA series consists of dual pairs of common anode, common cathode, and in-series low VF Schottky diodes,
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OT-563
18-October
common anode schottky power
d3 marking
marking code 18 surface mount diode
CMLSH2-4LA
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Untitled
Abstract: No abstract text available
Text: CMLSH2-4LA CMLSH2-4LC CMLSH2-4LS SURFACE MOUNT DUAL PAIR, LOW VF SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH2-4LA series consists of dual pairs of common anode, common cathode, and in-series low VF Schottky diodes,
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OT-563
Dissipation63
18-October
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S2 MARKING TRANSISTOR
Abstract: marking code va transistors 2N7002V 2N7002V-7 2N7002VA sot-563 MOSFET D1 DIODES Inc date code marking marking code va sot
Text: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002V/VA
AEC-Q101
OT-563
J-STD-020C
MIL-STD-202,
DS30448
S2 MARKING TRANSISTOR
marking code va transistors
2N7002V
2N7002V-7
2N7002VA
sot-563 MOSFET D1
DIODES Inc date code marking
marking code va sot
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transistor marking code G1
Abstract: MARKING CODE VA
Text: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage
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2N7002V/VA
AEC-Q101
OT-563
OT-563
J-STD-020D
DS30448
transistor marking code G1
MARKING CODE VA
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Untitled
Abstract: No abstract text available
Text: 2N7002V/VA DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage
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2N7002V/VA
AEC-Q101
OT-563
J-STD-020C
DS30448
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