marking JE SO 6
Abstract: No abstract text available
Text: SPECIFICATION TYPE : Approved by B E C D IS T R IB U T IO N LTD Customer Rev. Custom er’s Dwg. Number 429086 Custom er’s Part Number Toko Sample Num ber MC152 Signature # E 5 5 8 C N A -A 1 0 0 8 6 = P 3 Date One copy w ith y o u r sig n atu re is req u ired as your co n firm a tio n to our specifications.
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MC152
34g/lpcs
ET-7200.
H558D1
marking JE SO 6
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2005A
Abstract: 2SC4002
Text: Ordering num ber: EN 2 9 6 0 r. 2SC4002 No.2960 S AïYOi NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F e a tu re s . High breakdown voltage • Adoption of MBIT process • Excellent hpE linearity A b so lu te M axim um R atin g s at Ta = 25°C
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2SC4002
2034/2034A
SC-43
7tlt17D7b
2005A
2SC4002
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tsm3455
Abstract: No abstract text available
Text: s TAIW AN TSM3455 SEMICONDUCTOR 30V P-Channel MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23
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TSM3455
3455C
tsm3455
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Untitled
Abstract: No abstract text available
Text: REV. S ta tu s REVISION 04/11/00 TS Line Filter OL A. Electrical Specifications @ 25 °C 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Ld CD Rated Voltage: AC250V Rated Current: 3A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C
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AC250V
50/60Hz
30MHz,
AC250V,
DC500V,
300MQ
AC1500V,
UL1283,
ACAD\MXFMR\A1124381
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hi pot
Abstract: tamradio CY1 CODE
Text: REV . S ta tu s REVISION 04/11/00 TS Line Filter OL Ld A. Electrical Specifications @ 25 ° C 1. 2. 3. 4. 5. 6. 7. 7. 8. 9. 10. m Rated Voltage: AC250V Rated Current: 2A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C
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AC250V
50/60Hz
20MHz,
AC250V,
DC500V,
300MQ
UL1283,
50V/2A
hi pot
tamradio
CY1 CODE
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TSCN1
Abstract: No abstract text available
Text: REV. S ta tu s REVISION 04/11/00 TS Line Filter OL A. Electrical Specifications @ 25 °C 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Ld CD Rated Voltage: AC250V Rated Current: 2A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C
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AC250V
50/60Hz
30MHz,
AC250V,
DC500V,
300M0
UL1283,
ACAD\MXFMR\A1124371
TSCN1
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tamradio
Abstract: 10MH1A marking 1d AC1500V
Text: REV. Status REVISION 04/11/00 TS Line Filter OL A. Electrical Specifications @ 25 ° C 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Ld m Rated Voltage: AC250V Rated Current: 1A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C
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AC250V
50/60Hz
30MHz,
AC250V,
DC500V,
300MQ
AC1500V,
UL1283,
250VAC
tamradio
10MH1A
marking 1d
AC1500V
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Untitled
Abstract: No abstract text available
Text: REV. S ta tu s REVISION 04/11/00 TS Line Filter OL 0 A. Electrical Specifications @ 2 5 °C 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Ld CD Rated Voltage: AC250V Rated Current: 5A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C
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AC250V
50/60Hz
30MHz,
AC250V,
DC500V,
300MQ
UL1283,
ACAD\MXFMR\A1124391
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tamradio
Abstract: a1124 AC1500V ONX-05D A1124401
Text: REV. S ta tu s REVISION 04/11/00 TS Line Filter OL A. Electrical Specifications @ 25 ° C 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Ld m Rated Voltage: AC250V Rated Current: 0.5A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C
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AC250V
50/60Hz
30MHz,
AC250V,
DC500V,
300MQ
AC1500V,
ONX-05D,
UL1283,
tamradio
a1124
AC1500V
ONX-05D
A1124401
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tamradio
Abstract: AC1500V 3D marking
Text: REV. S t a tu s REVISION 04/11/00 TS Line Filter OL Q A. Electrical Specifications @ 25 ° C 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Ld m Rated Voltage: AC250V Rated Current: 3A Rated Frequency: 50/60Hz Operating Temmperature: —25’C ~ +55'C Storage Temperature: —25*C ~ +85*C
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AC250V
50/60Hz
30MHz,
AC250V,
DC500V,
300MQ
AC1500V,
UL1283,
250VAC
tamradio
AC1500V
3D marking
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Untitled
Abstract: No abstract text available
Text: TAIWAN SEMICONDUCTOR s TSM3455 30V P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 170 @ VGS= -4.5V -2.7 -30 1 23 Features
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TSM3455
3455C
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2005A
Abstract: VEBO-15V 2SC4389 PA 2027A TRANSISTOR IFW IC3100
Text: SANYO SEMICONDUCTOR [-W-'-s " -«?*'/? 6,/îj1 L:'~~~ CORP | 32E 7 cH 7 0 7 fcj O O C H l l l • 2006A —« -• • - D 2 E3 T -2 ? -2 3 N P N Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp Applications 2957 Features
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h707fci
T-2f23
T-91-20
SC-43
2005A
VEBO-15V
2SC4389
PA 2027A
TRANSISTOR IFW
IC3100
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BCV71
Abstract: BCV72 sot23 marking JR
Text: Philips Semiconductors Product specification NPN general purpose transistors BCV71 ; BCV72 FEATURES PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 base 2 em itter 3 collector • G eneral purpose sw itching and am plification.
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BCV71
BCV72
BCV71
BCV72
MAM255
sot23 marking JR
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP general purpose transistor BCW89 FEATURES PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 base 2 em itter 3 collector • G eneral purpose sw itching and am plification.
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BCW89
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Untitled
Abstract: No abstract text available
Text: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE SO P-8 PRODUCT SUMMARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce VDS V R o s ic a m o ) 25 4. Gate 5. 6, 7, 8. Drain Features Id (A) 1 5 V cs= 10V 10 21 @ V « s= 4 .5 V
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TSM4410
4410C
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Untitled
Abstract: No abstract text available
Text: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channei MOSFET b RoHS CO M PLIANCE SO P-8 PRODUCT SUM M ARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce R o s tru m ) I d A) 1 5 V cs= 10V 10 21 @ V{;r> = 4.5V 8 V DS (V) 25 4. Gate 5. 6, 7, 8. Drain Features
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TSM4410
4410C
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE S G 4 0 T C 1 OM 100V 40A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • I r=60^A • j r iiìè s b c u c < u •«»W Œ 2kVSSI Tj=150°C Full Molded Low lR=60pA Resistance for thermal run-away
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J533-1
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D4802
Abstract: M3446 607ts VE-25V
Text: TAIWAN S SEMICONDUCTOR pb RoHS TSM3446 20V N-Channei MOSFET CO M PLIANCE PRODUCT SUMMARY SO T-26 854 Pin D efinition: V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source ds R D S (on)(m Q ) Id (A) 33 @ Vos = 4 .5 V 5.3 40 @ V<yj= 2 .5V 4.4 (V ) 20 1 23
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M3446
OT-26
TSM3446CX6
D4802
M3446
607ts
VE-25V
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2005A
Abstract: 2SC3000 J160 transistor marking JB
Text: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage
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2SC3000
2034/2034A
SC-43
7tlt17D7b
2005A
2SC3000
J160
transistor marking JB
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Untitled
Abstract: No abstract text available
Text: TAIW AN s TSM3424 SEMICONDUCTOR 30V N-Channei MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCTS ÜMMARY P in D e fin itio n : VDS{V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on){lTlÛ) Id (A) 30 @ VGS= 10V 6.7 42 @ V gs = 4.5V 5.7 30 1 23 Features
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TSM3424
3424C
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MOSFET MARKING 3g
Abstract: 67A SOT 23 6 3G MOSFET M3424
Text: E TAIWAN TSM3424 S E M IC O N D U C T O R 30V N-Channei MOSFET pb RoHS CO M PLIANCE SO T-26 854 PR O D U C TS ÜMMARY P in D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V D S{V ) 30 1 23 Features R D S (o n ){ lT lÛ ) Id ( A ) 30 @ VGS= 10V
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M3424
OT-26
TSM3424CX6
OT-26
MOSFET MARKING 3g
67A SOT 23 6
3G MOSFET
M3424
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BCV47
Abstract: BCV27 BCV26 BCV46
Text: Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 FEATURES PINNING • Medium current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • High DC current gain (min. 20000). 2 emitter 3 collector APPLICATIONS
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BCV27;
BCV47
BCV26
BCV46.
BCV27
MAM29S
BCV46
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EL62
Abstract: Model 628
Text: MODEL 6 2 8 L R/2R Ladder .2 2 0 " Small Outline Thick Film DIP Surface Mount Resistor Networks ELECTRICAL Standard Resistance Range, Ohm s 1 K to 100K Standard Resistance Tolerance, at 25°C ±2% Operating Tem perature Range -55°C to +125°C Tem perature Coefficient of Resistance
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100ppm/
EL62
Model 628
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FD MARKING CODE SOT23
Abstract: MARKING fd SOT23 BCV26 BCV27 BCV46 BCV47 sot23 marking JR
Text: Philips Semiconductors Product specification PNP Darlington transistors BCV26; BCV46 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS
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BCV26;
BCV46
BCV27
BCV47.
BCV26
BCV46
MAM299
FD MARKING CODE SOT23
MARKING fd SOT23
BCV47
sot23 marking JR
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