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    MARKING J3 SOT23 Search Results

    MARKING J3 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING J3 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking J3 sot23

    Abstract: MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3
    Text: SEMICONDUCTOR KDS2236S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking J3 No. 1 Item Marking Device Mark J3 KDS2236S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF KDS2236S OT-23 R1998. marking J3 sot23 MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3

    s9013 transistor

    Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3

    S9013 SOT-23

    Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
    Text: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF S9013 OT-23 OT-23 S9012 500mA 500mA, 30MHz S9013 SOT-23 J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23

    S9013 J3

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz S9013 J3

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)


    Original     		PDF OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 S9013 S9012.

    MMSZ5243

    Abstract: N4 SOT23
    Text: 500mW ZENER DIODES MMSZ52 SERIES • New Product SOT23 Pkg. TA = 25˚C The latest comprehensive data to fully support these parts is readily available. TAPE & REEL SPECIFICATIONS SOT23 Tape Width Reel Diameter Quantity 8mm 178mm 3,000 8mm 330mm 10,000 Nom.


    Original     		PDF 500mW MMSZ52 MMSZ5225 MMSZ5226 MMSZ5227 MMSZ5228 MMSZ5229 MMSZ5230 MMSZ5231 MMSZ5232 MMSZ5243 N4 SOT23

    smd j3y

    Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O


    Original     		PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd j3y SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6

    PL MARKING 5PIN

    Abstract: TC12550
    Text: TC125 TC126 PFM STEP-UP DC/DC REGULATORS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC125/6 step-up Boost switching regulators furnish output currents to a maximum of 80 mA (VIN = 2V, VOUT = 3V) with typical efficiencies above 80%. These


    Original     		PDF TC125 TC126 OT-23A TC125) TC126) TC125/6 TC125/6-1 D-82152 PL MARKING 5PIN TC12550

    AH173

    Abstract: 1000 rpm dc motor 12v 4 pin hall marking code 6 3 phase hall effect 80 L hall effect sensor 3 pin Hall latch IC motor driver hall mARKING CODE g
    Text: AH173 INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE General Description Features • • • • • • • AH173 is a single-digital-output Hall-effect sensor with pull-up resistor for high temperature operation. The device includes an on-chip Hall voltage generator for magnetic sensing, an amplifier


    Original     		PDF AH173 SC59-3L SC59-3L AH173 1000 rpm dc motor 12v 4 pin hall marking code 6 3 phase hall effect 80 L hall effect sensor 3 pin Hall latch IC motor driver hall mARKING CODE g

    an 132 hall sensor

    Abstract: No abstract text available
    Text: AH173 INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE General Description Features • • • • • • • • Bipolar Hall Effect Latch Sensor 3V to 20V DC Operation Voltage Built-in Pull-Up Resistor 25mA Output Sink Current Operating Temperature: -40°C ~ +125°C


    Original     		PDF AH173 SC59-3L SC59-3L AH173 an 132 hall sensor

    Samsung Tantalum Capacitor

    Abstract: 5060 murata 2030 ic 5 pins CD54 TC125 TC125301ECT TC125331ECT TC125501ECT TC126 TC126301ECT
    Text: TC125 TC126 PFM Step-Up DC/DC Regulators FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC125/6 step-up Boost switching regulators furnish output currents to a maximum of 80 mA (VIN = 2V, VOUT = 3V) with typical efficiencies above 80%. These


    Original     		PDF TC125 TC126 TC125/6 TC126 TC125/6-1 DS21372A Samsung Tantalum Capacitor 5060 murata 2030 ic 5 pins CD54 TC125 TC125301ECT TC125331ECT TC125501ECT TC126301ECT

    2030 ic 5 pins

    Abstract: CD54 TC125 TC125301ECT TC125331ECT TC125501ECT TC126 TC126301ECT TC126331ECT TC126501ECT
    Text: TC125 TC126 PFM Step-Up DC/DC Regulators FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ ■ The TC125/6 step-up Boost switching regulators furnish output currents to a maximum of 80 mA (VIN = 2V, VOUT = 3V) with typical efficiencies above 80%. These


    Original     		PDF TC125 TC126 TC125/6 TC126 TC125/6-1 DS21372A 2030 ic 5 pins CD54 TC125 TC125301ECT TC125331ECT TC125501ECT TC126301ECT TC126331ECT TC126501ECT

    KDS2236S

    Abstract: KDS2236M *2236 capacitance
    Text: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES High Q : Q=70 Min. (f=50MHz). O F Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C SYMBOL RATING UNIT Reverse Voltage


    Original     		PDF KDS2236M/S 50MHz) 100nA O-92M 50MHz KDS2236S KDS2236M *2236 capacitance

    smd transistor marking j6

    Abstract: 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c
    Text: ISL6227EVAL2Z Dual Switcher Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board dual switcher implementation. For information about the DDR application, please refer to Application Note 1067, “ISL6227EVAL1 DDR Evaluation


    Original     		PDF ISL6227EVAL2Z ISL6227 ISL6227EVAL1 AN1068 smd transistor marking j6 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS2236M/S TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE AFC APPLICATION FOR FM RECEIVER. B A FEATURES ・High Q : Q=70 Min. (f=50MHz). O F ・Low Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25℃)


    Original     		PDF KDS2236M/S 50MHz) 100nA KDS2236M) O-92M 50MHz

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range


    Original     		PDF OT-23 OT-23 S9013LT1 500mA S9013LT1 30MHz

    KST9013

    Abstract: J3 SOT-23 j3 marking
    Text: IC Transistors SMD Type NPN Transistors KST9013 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent hFE linearity 0.4 3 Features 1 0.55 Collector Current :IC=0.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1


    Original     		PDF KST9013 OT-23 500mA 30MHz KST9013 J3 SOT-23 j3 marking

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．４ １．３ ２．９ Power dissipation


    Original     		PDF OT-23 S9013LT1 037TPY 950TPY 550REF 022REF

    S9013LT1

    Abstract: MARKING E1 SOT23 TRANSISTOR
    Text: SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．４ １．３ ２．９ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current


    Original     		PDF OT-23 OT--23 S9013LT1 S9013LT1 037TPY 950TPY 550REF 022REF MARKING E1 SOT23 TRANSISTOR

    MARKING J3 SOT-23

    Abstract: MMS9013 marking code j3 "MARKING CODE J3" J3 SOT-23 sot-23 MARKING CODE 21
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS9013 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V


    Original     		PDF MMS9013 OT-23 -55OC OT-23 20mAdc, 30MHz) MARKING J3 SOT-23 MMS9013 marking code j3 "MARKING CODE J3" J3 SOT-23 sot-23 MARKING CODE 21

    marking code J3

    Abstract: "MARKING CODE J3" MARKING J3 SOT-23
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS9013 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A


    Original     		PDF MMS9013 OT-23 -55OC OT-23 20mAdc, 30MHz) marking code J3 "MARKING CODE J3" MARKING J3 SOT-23

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6

    HSMS 2841

    Abstract: HSMS-2841 HSCH-5337 5082-2815 HSMS2841 62w sot-23 HSMS2801 HSMS0001 diode SOT-143 Marking Code A5 HSMS-0002
    Text: Surface Mount Schottky Diodes A vailable C onfigurations SOT-23 DIE VBR P GLASS SINGLE ? SINGLE SOT-143 COMMON ANODE SERIES A COMMON CATHODE A UNCON­ NECTED PAIR ’’ RING QUAD BRIDGE QUAD —M - HSMS-0001 70 V 5082-2800 HSMS-2800 HSMS-2801 HSMS-2802 HSMS-2803


    OCR Scan     		PDF OT-23 OT-143 HSMS-0001 HSMS-0002 HSMS-2804 HSMS-2814 HSMS-2824 HSMS-2800 HSMS-2801 HSMS-2802 HSMS 2841 HSMS-2841 HSCH-5337 5082-2815 HSMS2841 62w sot-23 HSMS2801 HSMS0001 diode SOT-143 Marking Code A5