Untitled
Abstract: No abstract text available
Text: SOT-323 Plastic-Encapsulate Diode ZENER DIODE SOT—323 FEATURES： 1.25±0.05 1.01 REF Planar Die Construction 200mW Power Dissipation on FR-4 PCB General purpose, Medium Current Ideally Suited for Automated Assembly Marking: see table on page2 The first code
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OT-323
200mW
MMBZ5221BW-MMBZ5259BW
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC807-40WT1G
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AEC-Q101
LBC807-40WT1G
S-LBC807-40WT1G
OT-323
3000/Tape
LBC807-40WT3G
S-LBC807-40WT3G
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marking FR PNP SOT323
Abstract: LBC807-40WT1G LBC807-40WT3G YL marking sc70
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel LBC807-40WT3G YL SOT-323 10000/Tape&Reel LBC807-40WT1G
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LBC807-40WT1G
OT-323
3000/Tape
LBC807-40WT3G
10000/Tape
marking FR PNP SOT323
LBC807-40WT1G
LBC807-40WT3G
YL marking sc70
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device LBC807-40WT1G Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel LBC807-40WT3G YL SOT-323 10000/Tape&Reel
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LBC807-40WT1G
OT-323
3000/Tape
LBC807-40WT3G
10000/Tape
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LBC807-40WT1G
Abstract: LBC* MARKING LBC807-40WT3G e1 IC sot323 marking FR PNP SOT323
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-40WT1G YL SOT-323 3000/Tape&Reel LBC807-40WT3G YL SOT-323 10000/Tape&Reel LBC807-40WT1G
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LBC807-40WT1G
OT-323
3000/Tape
LBC807-40WT3G
10000/Tape
LBC807-40WT1G
LBC* MARKING
LBC807-40WT3G
e1 IC sot323
marking FR PNP SOT323
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marking FR PNP SOT323
Abstract: TRANSISTOR BL 560 sot marking code FQ TRANSISTOR FQ 2SA1576AW 2SC4081 marking code fq sot323 transistor marking marking FR SOT323 marking code fs 1 sot 323
Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=200mW z Excellent HFE Linearity. z Complements the 2SC4081. 2SA1576AW Pb Lead-free APPLICATIONS z General purpose application. SOT-323 ORDERING INFORMATION
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2SA1576AW
200mW)
2SC4081.
OT-323
BL/SSSTF029
marking FR PNP SOT323
TRANSISTOR BL 560
sot marking code FQ
TRANSISTOR FQ
2SA1576AW
2SC4081
marking code fq
sot323 transistor marking
marking FR SOT323
marking code fs 1 sot 323
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MUN5130
Abstract: No abstract text available
Text: MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors BRT R1 = 1 kW, R2 = 1 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2130,
MMUN2130L,
MUN5130,
DTA113EE,
DTA113EM3,
NSBA113EF3
DTA113E/D
MUN5130
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Untitled
Abstract: No abstract text available
Text: MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3, NSBA124XF3 Digital Transistors BRT R1 = 22 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2134,
MMUN2134L,
MUN5134,
DTA124XE,
DTA124XM3,
NSBA124XF3
DTA124X/D
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Untitled
Abstract: No abstract text available
Text: MUN2240, MMUN2240L, MUN5240, DTC144TE, DTC144TM3, NSBC144TF3 Digital Transistors BRT R1 = 47 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2240,
MMUN2240L,
MUN5240,
DTC144TE,
DTC144TM3,
NSBC144TF3
DTC144T/D
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marking 6H
Abstract: NSBA123EF3 marking 6H SC-88
Text: MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 2.2 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2131,
MMUN2131L,
MUN5131,
DTA123EE,
DTA123EM3,
NSBA123EF3
DTA123E/D
marking 6H
marking 6H SC-88
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NSBC124XF3
Abstract: No abstract text available
Text: MUN2234, MMUN2234L, MUN5234, DTC124XE, DTC124XM3, NSBC124XF3 Digital Transistors BRT R1 = 22 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2234,
MMUN2234L,
MUN5234,
DTC124XE,
DTC124XM3,
NSBC124XF3
DTC124X/D
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MMUN2235LT1G
Abstract: marking AA2 sot
Text: MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2235,
MMUN2235L,
MUN5235,
DTC123JE,
DTC123JM3,
NSBC123JF3
DTC123J/D
MMUN2235LT1G
marking AA2 sot
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marking 6l
Abstract: A6L transistor
Text: MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3, DTA124XF3 Digital Transistors BRT R1 = 22 kW, R2 = 47 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2134,
MMUN2134L,
MUN5134,
DTA124XE,
DTA124XM3,
DTA124XF3
DTA124X/D
marking 6l
A6L transistor
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NSBC123EF3
Abstract: No abstract text available
Text: MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors BRT R1 = 2.2 kW, R2 = 2.2 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2231,
MMUN2231L,
MUN5231,
DTC123EE,
DTC123EM3,
NSBC123EF3
DTC123E/D
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NSVMUN2212T1G
Abstract: No abstract text available
Text: MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors BRT R1 = 22 kW, R2 = 22 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2212,
MMUN2212L,
MUN5212,
DTC124EE,
DTC124EM3,
NSBC124EF3
DTC124E/D
NSVMUN2212T1G
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Untitled
Abstract: No abstract text available
Text: MUN2240, MMUN2240L, MUN5240, DTC144TE, DTC144TM3, NSBC144TF3 Digital Transistors BRT R1 = 47 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2240,
MMUN2240L,
MUN5240,
DTC144TE,
DTC144TM3,
NSBC144TF3
DTC144T/D
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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900MHz
Q62702-F1492
OT-323
IS211
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Transistor BFR 181w
Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
Q62702-F1491
OT-323
Transistor BFR 181w
GMA13
MARKING CODE 21E SOT323
TRANSISTOR BO 345
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marking FR PNP SOT323
Abstract: BF824W
Text: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323
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OT323
BF824W
BF824W
UAU037
OT323)
marking FR PNP SOT323
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SOT89 MARKING CODE 3D
Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK
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OT143,
OT223
OT323
PXTA27
BCX51
BCW60A
BCW60B
BCX51-10
BCW60C
BCX51-16
SOT89 MARKING CODE 3D
sot89 mark code AE
sot23 mark code AE
3D sot23
SOT89 marking cec
SOT89 MARKING CODE 43
marking 1p sot23
sot23 p04 marking
marking P1R
SOT89 MARKING 5G
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marking 1GL
Abstract: marking G SOT323 Transistor BFR92A BFR92AW
Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.
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BFR92AW
OT323
BFR92AW
BFR92A.
MBC870
7110flSb
marking 1GL
marking G SOT323 Transistor
BFR92A
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Untitled
Abstract: No abstract text available
Text: bbSBSBl OOBMMbfi T 7 T « A P X P hilips S em iconductors NPN general purpose transistor BC849W; BC850W N AMER PHILIPS/DISCRETE FEATURES Product specification • ■ ■ ■ M i b7 E » PIN CONFIGURATION • S- mini package. • Low noise DESCRIPTION NPN transistor in a plastic SOT323
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BC849W;
BC850W
OT323
MBC670
BC849W
BC849BW;
BC850BW
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors k b 53^31 ' N A f lE R 0 0 2 5 C1 E 7 fiS ^ ^B A P X P H IL IP S /D IS C R E T E P roduct specification b7E D PNP general purpose transistor FEATURES PMSS3906 PIN CONFIGURATION • S-mini package. DESCRIPTION PNP transistor in a plastic SOT323
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PMSS3906
OT323
MAM096
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TRANSISTOR 6CT
Abstract: 306 marking code transistor 6ct transistor BC818-40W 6ht6
Text: Philips Semiconductors Product specification NPN general purpose transistors BC817W; BC818W FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector General purpose switching and amplification.
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BC817W;
BC818W
OT323
BC807W
BC808W.
BC817W
BC817-16W
BC817-25W
BC817-40W
BC818W
TRANSISTOR 6CT
306 marking code transistor
6ct transistor
BC818-40W
6ht6
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