1N60P
Abstract: diode sod-123 marking code FN
Text: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS
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1N60PW,
1N60SW
1N60PW:
1N60SW:
OD-123
OD-123
1N60P
diode sod-123 marking code FN
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s9018 transistor
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8
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OT-23
S9018
OT-23
400MHz
s9018 transistor
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1N60P
Abstract: diode sod-123 marking code 26
Text: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS
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1N60PW,
1N60SW
1N60PW:
1N60SW:
OD-123
OD-123
1N60P
diode sod-123 marking code 26
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8
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OT-23
S9018
OT-23
400MHz
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MMBT9018
Abstract: No abstract text available
Text: UTC MMBT9018 NPN EPITAXIAL PLANAR TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER FEATURES 2 *High Current Gain Bandwidth Product 1 fT=1.1GHz Typ MARKING 3 18 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
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MMBT9018
OT-23
QW-R206-032
MMBT9018
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tokin 473 5.5v
Abstract: 0,10f, 5,5v, nec tokin 0,047F 5.5v FM0H103ZF FM0H224ZF 5.5v 0.047f 25 fmr 160 FME0H473ZF FMR0V104ZF FM0V224ZF
Text: 6.2 FM Series Dimensions 10.5±0.5 T±0.5 11.5±0.5 0.4±0.1 5±1 0.5±0.1 0.4±0.1 5±0.5 （Unit：mm） Markings Negative polarity identification NT MAX operating voltage Nominal capacitance 5.5V – 473 A1 + E E ：FME type marking L ：FML type marking
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time24
9565SCAVOL12E
tokin 473 5.5v
0,10f, 5,5v, nec
tokin 0,047F 5.5v
FM0H103ZF
FM0H224ZF
5.5v 0.047f
25 fmr 160
FME0H473ZF
FMR0V104ZF
FM0V224ZF
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S9018 SOT-23
Abstract: s9018
Text: S9018 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKING：J8 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
S9018
OT-23
400MHz
S9018 SOT-23
s9018
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BF543
Abstract: triode sot23
Text: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration
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BF543
VPS05161
Jun-28-2001
EHT07033
EHT07034
BF543
triode sot23
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marking code 11s
Abstract: MARKING CODE 21S BF543
Text: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration
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BF543
VPS05161
marking code 11s
MARKING CODE 21S
BF543
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Untitled
Abstract: No abstract text available
Text: BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration
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BF543
VPS05161
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BF999
Abstract: triode sot23
Text: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S
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BF999
VPS05161
BF999
triode sot23
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BF999
Abstract: No abstract text available
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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BF999
VPS05161
Nov-08-2002
BF99cal
BF999
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BF999
Abstract: triode sot23
Text: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S - - Package
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BF999
BF999
triode sot23
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Untitled
Abstract: No abstract text available
Text: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S
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BF999
VPS05161
Apr-06-2005
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BF 22 W
Abstract: No abstract text available
Text: BF 543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications ISDD = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 543 LDs Pin Configuration
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VPS05161
OT-23
Dec-13-1999
EHT07033
EHT07034
BF 22 W
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bb515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Jun-28-2001
bb515
BF999
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Q62702-F1372
Abstract: No abstract text available
Text: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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Q62702-F1372
OT-23
Q62702-F1372
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Bb515
Abstract: bf999
Text: BF 999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package
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VPS05161
OT-23
EHT07315
EHT07316
BB515
EHM07024
Oct-26-1999
Bb515
bf999
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c22e
Abstract: Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450
Text: PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance BF 550 Type Marking Ordering Code
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Q62702-F944
OT-23
c22e
Q62702-F944
transistor marking 550
g22E
y21e
QBF550
transistor BF 450
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marking code IR10 diode
Abstract: sod diode marking IR10 IR10 marking code SMD FM IC tuner diode SMD MARKING CODE 2M SDP520D MARKING CODE SMD IC KSD-C022-000 SMD MARKING CODE 2M
Text: SDP520D Semiconductor Attenuator Diode Features ? SMD package : SOD-323 ? Low capacitance : C T =0.25pF Typ. ? Low series resistance : rs=7? (Typ.) ? VHF tuner band RF attenuator application ? AGC for FM tuner Ordering Information Type No. Marking Package Code
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SDP520D
OD-323
KSD-C022-000
100MHz
marking code IR10 diode
sod diode marking IR10
IR10 marking code
SMD FM IC tuner
diode SMD MARKING CODE 2M
SDP520D
MARKING CODE SMD IC
KSD-C022-000
SMD MARKING CODE 2M
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bf544
Abstract: siemens fet to92 700M
Text: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F1231
eht07043
eht07044
EHM07002
fl23SbDS
0Qbb777
bf544
siemens fet to92
700M
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking
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OCR Scan
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PDF
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Q62702-F944
OT-23
fl23SbDS
00bb7fi
EHTG7054
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MARKING CODE 21S
Abstract: 12NA50
Text: Si-N Channel MOS FET Triode BF 543 P relim inary Data • For RF stages up to 300 MHz preferably in FM applications • loss = 4 mA, g s = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution! Type Marking O rdering code (taped
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OCR Scan
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PDF
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Q62702-F1230
OT-23
MARKING CODE 21S
12NA50
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For R F stages up to 300 MHz preferably in FM applications • lo ss = 4 mA, gis = 12 mS ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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OCR Scan
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PDF
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Q62702-F1372
OT-23
EHT07032
300MHz
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