philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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Untitled
Abstract: No abstract text available
Text: F112R6A015SC target datasheet flowPACK 1 1200V/15A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A015SC-M438E08 ● 10-F112R6A015SC01-M438E18
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F112R6A015SC
200V/15A
10-F112R6A015SC-M438E08
10-F112R6A015SC01-M438E18
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Untitled
Abstract: No abstract text available
Text: F112R6A035SC target datasheet flowPACK 1 1200V/35A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A035SC-M439E08 ● 10-F112R6A035SC01-M439E18
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F112R6A035SC
200V/35A
10-F112R6A035SC-M439E08
10-F112R6A035SC01-M439E18
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Untitled
Abstract: No abstract text available
Text: F112R6A050SC target datasheet flowPACK 1 1200V/50A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A050SC-M430E08 ● 10-F112R6A050SC01-M430E18
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F112R6A050SC
200V/50A
10-F112R6A050SC-M430E08
10-F112R6A050SC01-M430E18
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vinco igbt
Abstract: No abstract text available
Text: 10-F1127PA050SC-L169E09 datasheet flow 7PACK 1 1200 V / 50 A Features flow 1 17mm housing ● Compact Flow 1 housing ● Trench Fieldstop IGBT4 Technology ● Compact and Low Inductance Design ● Built-in NTC Schematic Target applications ● Motor Drives
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10-F1127PA050SC-L169E09
vinco igbt
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diode marking f13
Abstract: FFM105 F11-F17 F17 DIODE FFM101 FFM102 FFM103 FFM104 FFM106
Text: F11-F17 Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8) 0.094(2.4) Exceeds environmental standards of MIL-S-19500 /
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F11-F17
MIL-S-19500
DO-214AC
MIL-STD-750,
diode marking f13
FFM105
F11-F17
F17 DIODE
FFM101
FFM102
FFM103
FFM104
FFM106
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Untitled
Abstract: No abstract text available
Text: 10-F112M3A025SH-M746F09 10-FY12M3A025SH-M746F08 datasheet flow3xMNPC 1 1200V/25A Features flow1 housing ● 3 phase mixed voltage component topology ● neutral point clamped inverter ● reactive power capability 12 mm ● low inductance layout Target Applications
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10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
200V/25A
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Untitled
Abstract: No abstract text available
Text: 10-FY12M3A040SH-M749F08 10-F112M3A040SH-M749F09 flow3xMNPC 1 1200V/40A Features flow1 housing ● 3 phase mixed voltage component topology ● neutral point clamped inverter ● reactive power capability 12 mm ● low inductance layout Target Applications
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10-FY12M3A040SH-M749F08
10-F112M3A040SH-M749F09
200V/40A
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25V 1A power MOSFET TO-220
Abstract: mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
25V 1A power MOSFET TO-220
mosfet 600V 2A
TO-252 N-channel MOSFET
MOSFET TO-220
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marking diode f11
Abstract: No abstract text available
Text: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM5ND50
O-251
O-252
TSM5ND50
marking diode f11
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LTC4359CMS8
Abstract: No abstract text available
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current
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LTC4359
LT4256-1/LT4256-2
LTC4260
LTC4364
4359fb
com/LTC4359
LTC4359CMS8
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IN751a
Abstract: 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown current n Low 150 A Operating Current
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LTC4359
4359f
IN751a
3b transistor
IN759A
LTC4363
IN751
FDS3732
solar voltage regulator 24v
48v 150A mosfet switch
BSC011N03LS
block diagram 12V solar charge controller
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FDS3732
Abstract: 3b transistor
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current
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LTC4359
4359fa
com/LTC4359
FDS3732
3b transistor
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LTC2997
Abstract: fairchild marking codes sot-23 UMT3904 ta 1013a ROHM 1004 B6015L12F CMPT3904 LTC2997C LTC2997CDCB LTC2997H
Text: LTC2997 Remote/Internal Temperature Sensor Features Description Converts Remote Sensor or Internal Diode Temperature to Analog Voltage n ±1°C Remote Temperature Accuracy n ±1.5°C Internal Temperature Accuracy n Built-In Series Resistance Cancellation n 2.5V to 5.5V Supply Voltage
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LTC2997
LTC2997
LTC6078
LTC6078
LTC6079
2997f
fairchild marking codes sot-23
UMT3904
ta 1013a
ROHM 1004
B6015L12F
CMPT3904
LTC2997C
LTC2997CDCB
LTC2997H
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LTC6692
Abstract: LTC2997 B6015L12F 30AWG CMPT3904 LTC2997C LTC2997CDCB LTC2997H LTC2997HDCB LTC2997I
Text: LTC2997 Remote/Internal Temperature Sensor FEATURES DESCRIPTION n The LTC 2997 is a high-accuracy analog output temperature sensor. It converts the temperature of an external sensor or its own temperature to an analog voltage output. A built-in algorithm eliminates errors due to series resistance between the LTC2997 and the sensor diode.
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LTC2997
LTC2997
LTC6078
LTC6078
LTC6079
2997fa
LTC6692
B6015L12F
30AWG
CMPT3904
LTC2997C
LTC2997CDCB
LTC2997H
LTC2997HDCB
LTC2997I
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MMBT2N2222
Abstract: ltbw CDRH74 LTC1474 LTC1474CMS8 LTC1475 LTC1475CMS8 MBR0530 precision, 200uH inductor BAT84
Text: LTC1474/LTC1475 Low Quiescent Current High Efficiency Step-Down Converters U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT C 1474/LTC1475 are high efficiency step-down converters with internal P-channel MOSFET power switches
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LTC1474/LTC1475
1474/LTC1475
LTC1474/
LTC1475
LTC1474/LTC1475
300mA)
LTC1440/LTC1441/LTC1442
LT1495/LT1496
LT1521/LT1521-3/LT1521-3
LT1521-5
MMBT2N2222
ltbw
CDRH74
LTC1474
LTC1474CMS8
LTC1475CMS8
MBR0530
precision, 200uH inductor
BAT84
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MMBT2N2222
Abstract: 100uF ltbw DIODE 1474 LTC1474 LTC1474CMS8 LTC1475 MBR0530 1474I ltc14755
Text: LTC1474/LTC1475 Low Quiescent Current High Efficiency Step-Down Converters DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT C 1474/LTC1475 series are high efficiency stepdown converters with internal P-channel MOSFET power
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LTC1474/LTC1475
1474/LTC1475
LTC1474
LTC1475
LTC1440/LTC1441/LTC1442
LT1495/LT1496
LT1521/LT1521-3/LT1521-3
LT1521-5
300mA
LTC1574/LTC1574-3
MMBT2N2222
100uF
ltbw
DIODE 1474
LTC1474
LTC1474CMS8
MBR0530
1474I
ltc14755
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DIODE 1474
Abstract: No abstract text available
Text: LTC1474/LTC1475 Low Quiescent Current High Efficiency Step-Down Converters DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT C 1474/LTC1475 series are high efficiency stepdown converters with internal P-channel MOSFET power
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LTC1474/LTC1475
1474/LTC1475
LTC1474
LTC1475
LTC1440/LTC1441/LTC1442
LT1495/LT1496
LT1521/LT1521-3/LT1521-3
LT1521-5
300mA
LTC1574/LTC1574-3
DIODE 1474
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DIODE 1474
Abstract: 147533 ltbw 474I33 BAT84 LT1634-1.25 ltbw 83 LTC1474 LTC1474CMS8 LTC1475
Text: LTC1474/LTC1475 Low Quiescent Current High Efficiency Step-Down Converters DESCRIPTION U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT C 1474/LTC1475 series are high efficiency stepdown converters with internal P-channel MOSFET power
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LTC1474/LTC1475
1474/LTC1475
LTC1474
LTC1475
LTC1440/LTC1441/LTC1442
LT1495/LT1496
LT1521/LT1521-3/LT1521-3
LT1521-5
300mA
LTC1574/LTC1574-3
DIODE 1474
147533
ltbw
474I33
BAT84
LT1634-1.25
ltbw 83
LTC1474
LTC1474CMS8
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K1100AM
Abstract: Fox clock oscillator F1100 F1100 F1114 f1115 f1114 fox F1116 F1145 k1100a F1144
Text: 1 FOX ELECTRONICS 5SE D • 3701*122 G0G03ST 3 ■i'T:5 0 - £ > F1100 SERIES / TTL CLOCK OSCILLATORS FOX F1100 Series Oscillators are TTL Compatible and are manufactured using state of the art thick film hybrid technology. Fox oscillators feature a high quality welded
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Q0D03ST
F1100
K1100AM
820ering
10-55Hz,
55-2000Hz,
14VDC
04VDC
Fox clock oscillator F1100
F1114
f1115
f1114 fox
F1116
F1145
k1100a
F1144
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F1114
Abstract: K1100AM K1100A f1114 fox F1115 Fox f1100 20.000 G F1100 F1116
Text: 1 FOX ELECTRONICS 5SE D • 3701*122 G0G03ST 3 ■i'T:5 0 - £ > F1100 SERIES / TTL CLOCK OSCILLATORS FOX F1100 Series Oscillators are TTL Compatible and are manufactured using state of the art thick film hybrid technology. Fox oscillators feature a high quality welded
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370n22
0G03S'
F1100
K1100AM
10-55Hz,
55-2000Hz,
14VDC
04VDC
F1114
K1100A
f1114 fox
F1115
Fox f1100
20.000 G
F1116
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K1100A
Abstract: K1100AM F1100 Fox clock oscillator F1100 f1114 fox Fox f1100
Text: 5SE D FOX ELECTRONICS • 37DnS2 □ 0 G 0 3 S cì 3 ■ " P 5 Q - £ > F1100 SERIES / TTL CLOCK OSCILLATORS FOX F1100 Series Oscillators are TTL Compatible and are manufactured using state of the art thick film hybrid technology. Fox oscillators feature a high quality welded
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37DnS2
0G03Sc
F1100
K1100AM
10-55Hz,
55-2000Hz,
127mm)
F1100-Y
K1100A
Fox clock oscillator F1100
f1114 fox
Fox f1100
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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