Untitled
Abstract: No abstract text available
Text: Product Brief – 121-Ball LPDDR2-PCM and LPDDR2 MCP Features Product Brief LPDDR2-PCM and Mobile LPDDR2 121-Ball MCP MT66R7072A10AB5ZZW.ZCA, MT66R7072A10ACUXZW.ZCA MT66R5072A10ACUXZW.ZFA Features Figure 1: MCP Block Diagram Micron LPDDR2-PCM and LPDDR2 components
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Original
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121-Ball
MT66R7072A10AB5ZZW
MT66R7072A10ACUXZW
MT66R5072A10ACUXZW
16-bit
09005aef84e25954
121ball
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PDF
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capacitors MFP
Abstract: 7NF15
Text: Metallized Polypropylene Film Capacitors MFP B 32 632 Coated (Powder Dipped) … B 32 634 MFP pulse capacitors with highest possible contact reliability Crimped version Construction • Dielectric: polypropylene ■ Film metallized on one side and metal foils internally connected in series
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Original
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KMK0711-6
capacitors MFP
7NF15
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PDF
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Marking code vacc
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
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Original
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DS05-20892-3E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
MBM29PDD322TE/BE
F0206
Marking code vacc
FPT-48P-M19
FPT-48P-M20
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
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Original
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DS05-20892-3E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
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PDF
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20/MBM29F160TE/BE
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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Original
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DS05-20879-4E
MBM29F160TE70/90
MBM29F160BE70/90
MBM29F160TE/BE
16M-bit,
48-pin
F0203
20/MBM29F160TE/BE
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
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Original
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DS05-20892-2E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
F0203
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PDF
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Untitled
Abstract: No abstract text available
Text: MBM29DS163TE10 MBM29DS163BE10 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MBM29DS163TE10
MBM29DS163BE10
F0303
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PDF
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-4E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE10 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is
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Original
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DS05-20891-4E
MBM29DS163TE/BE10
MBM29DS163TE/BE
48-pin
48-ball
F0303
FPT-48P-M19
FPT-48P-M20
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PDF
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Untitled
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0303
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
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Original
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DS05-20892-1E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
MBM29PDD322TE/BE
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PDF
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-3E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE 10/12 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (I) and 48-ball FBGA packages. This device is
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Original
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DS05-20891-3E
MBM29DS163TE/BE
48-pin
48-ball
MBM29DS163TE/BE
FPT-48P-M19
FPT-48P-M20
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-3E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE 10/12 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (I) and 48-ball FBGA packages. This device is
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Original
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DS05-20891-3E
MBM29DS163TE/BE
48-pin
48-ball
MBM29DS163TEthird
F0203
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PDF
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AAH17
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20877-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 • FEATURES • Single 1.8 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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Original
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DS05-20877-1E
MBM29SL160TD-10/-12/MBM29SL160BD-10/-12
48-pin
48-ball
AAH17
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20877-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29SL160TD-10/-12/MBM29SL160BD-10/-12 • FEATURES • Single 1.8 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20877-1E
MBM29SL160TD-10/-12/MBM29SL160BD-10/-12
48-pin
48-ball
D-63303
F9910
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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DS05-20879-5E
MBM29F160TE70/90
MBM29F160BE70/90
MBM29F160TE/BE
16M-bit,
48-pin
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PDF
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MBM29F160BE90
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0207
MBM29F160BE90
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PDF
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0404
FPT-48P-M19
FPT-48P-M20
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PDF
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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Original
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DS05-20879-5E
MBM29F160TE70/90
MBM29F160BE70/90
MBM29F160TE/BE
16M-bit,
48-pin
F0207
FPT-48P-M19
FPT-48P-M20
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PDF
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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Original
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DS05-20879-2E
MBM29F160TE/BE-55/-70/-90
MBM29F160TE/BE
16M-bit,
48-pin
FPT-48P-M19
FPT-48P-M20
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PDF
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MBM29F160
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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Original
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DS05-20879-2E
MBM29F160TE/BE-55/-70/-90
MBM29F160TE/BE
16M-bit,
48-pin
MBM29F160
FPT-48P-M19
FPT-48P-M20
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PDF
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MBM29F160BE90
Abstract: No abstract text available
Text: MBM29F160TE70/90 MBM29F160BE70/90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MBM29F160TE70/90
MBM29F160BE70/90
F0207
MBM29F160BE90
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PDF
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MBM29F160BE-90
Abstract: MBM29F160BE90 FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE55/70/90 MBM29F160BE55/70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
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Original
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DS05-20879-3E
MBM29F160TE55/70/90
MBM29F160BE55/70/90
MBM29F160TE/BE
16M-bit,
48-pin
MBM29F160BE-90
MBM29F160BE90
FPT-48P-M19
FPT-48P-M20
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-1E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE/BE-55/-70/-90 • FEATURES • 0.23µm Process Technology • Single 5.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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Original
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DS05-20879-1E
MBM29F160TE/BE-55/-70/-90
48-pin
D-63303
F9905
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-5E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE90 MBM29LV651UE90 • DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and
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DS05-20882-5E
MBM29LV650UE90
MBM29LV651UE90
MBM29LV650UE/651UE
64M-bit,
F0303
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PDF
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