A778
Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
Text: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
A778
A778 transistor
a784
Q62702-A779
Q62702-A778
A779
Q62702-A109
Q62702-A784
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GHM1540
Abstract: GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384
Text: This is the PDF file of catalog No.C16E-3. No.C16E3.pdf MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR DC250V-3.15kV/AC250V r.m.s. GHM Series MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C16E-3 This is the PDF file of catalog No.C16E-3.
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C16E-3.
C16E3
DC250V-3
15kV/AC250V
C16E-3
GHM1000
GHM1500
AC250V
GHM2000
GHM1540
GHM3045
Iec384-14
GHM3145
GHM2145
223k x7r 50
cd 471k capacitor
GHM1040
GHM1545
iec384
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diode MARKING CODE GC
Abstract: 2SC2012 fast recovery diode 600v 5A GC marking code diode marking code GC diode SC201 SC201-2 SC201-4 SC201-6 diode marking Gc
Text: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications
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SC201
SC201-2
SC201-4
SC201-6
SC201
diode MARKING CODE GC
2SC2012
fast recovery diode 600v 5A
GC marking code diode
marking code GC diode
SC201-2
SC201-4
SC201-6
diode marking Gc
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dALLAS MARKING CODE
Abstract: fast recovery diode 600v 5A SC201 SC201-2 SC201-4 SC201-6 diode MARKING CODE GC
Text: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications
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SC201
SC201-2
SC201-4
SC201-6
SC201
dALLAS MARKING CODE
fast recovery diode 600v 5A
SC201-2
SC201-4
SC201-6
diode MARKING CODE GC
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
induction cooking
ge 6220
induction cooking circuits
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Untitled
Abstract: No abstract text available
Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in
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6781A
IRG4PH40UD2-E
200kHz
O-247AD
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in
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6781A
IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
TO247AD package
marking GC diode
induction cooking circuits
induction cooking
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2SC2012
Abstract: No abstract text available
Text: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications
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SC201
SC201-2
SC201-4
SC201-6
SC201-8
SC201
15x15mm
2SC2012
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irf 3250
Abstract: ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410
Text: PD - 94739 IRG4PH40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter
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IRG4PH40UD2
O-247AC
irf 3250
ULTRAFAST 10A 600V
TD 1410 IC
035H
C-150
IRFPE30
IRG4PH40UD2
IGBT 100V 200A
td 1410
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transistor VCE 1000V
Abstract: TO-247AC Package 12A H3 irf 150 equivalent 035H IRFPE30
Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
transistor VCE 1000V
TO-247AC Package
12A H3
irf 150 equivalent
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 95327 IRG4PC30UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
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035H
Abstract: IRFPE30
Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
035H
IRFPE30
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IRF 504
Abstract: 005 418 irf 144
Text: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC20UD-SPbF
200kHz
IRF 504
005 418
irf 144
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marking code GC diode
Abstract: SC201 SC201-2 SC201-4 SC201-6 SC201-8 diode marking Gc marking CODE GA
Text: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications
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SC201
SC201-2
SC201-4
SC201-6
SC201
15x15mm
marking code GC diode
SC201-2
SC201-4
SC201-6
SC201-8
diode marking Gc
marking CODE GA
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IRF1010
Abstract: No abstract text available
Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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PD-94810
IRG4BC30UDPbF
O-220AB
O-220AB.
IRF1010
IRF1010
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IGBT 600V 12A
Abstract: TO-220AB transistor package ic MARKING QG ultraFast Recovery Bridge Rectifier IRF1010
Text: PD-94810 IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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PD-94810
IRG4BC30UDPbF
O-220AB
O-220AB.
IRF1010
IGBT 600V 12A
TO-220AB transistor package
ic MARKING QG
ultraFast Recovery Bridge Rectifier
IRF1010
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Untitled
Abstract: No abstract text available
Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses
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7480A
IRG7PH42UD1PbF
IRG7PH42UD1-EP
1300Vpk
O-247AD
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4060BE
Abstract: No abstract text available
Text: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications
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SC201
200de
SC201
15x15mm
4060BE
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IRG7PH42UD1-EP
Abstract: IRG7PH42UD1PbF induction heating Circuit P channel 600v 30a IGBT 035H C-150 IRFPE30 IRGP30B120KD-E 6 pulse IGBT single line drawing 600v 30a IGBT
Text: PD - 97480 IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses Square RBSOA
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IRG7PH42UD1PbF
IRG7PH42UD1-EP
1300Vpk
O-247AD
IRG7PH42UD1-EP
IRG7PH42UD1PbF
induction heating Circuit
P channel 600v 30a IGBT
035H
C-150
IRFPE30
IRGP30B120KD-E
6 pulse IGBT single line drawing
600v 30a IGBT
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IRG7PH42UD1PBF
Abstract: IRG7PH42UD1-EP 60A12 IRG7PH42U irg7ph42ud IRG7PH42UD1 irgp30b120 irg7ph42 igbt 600V 30A
Text: PD - 97480A IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • Low VCE ON trench IGBT technology Low switching losses
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7480A
IRG7PH42UD1PbF
IRG7PH42UD1-EP
1300Vpk
O-247AD
IRG7PH42UD1-EP
60A12
IRG7PH42U
irg7ph42ud
IRG7PH42UD1
irgp30b120
irg7ph42
igbt 600V 30A
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irf 100v 200A
Abstract: transistor irf 840 IRF 840 equivalent
Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4BC20UDPbF
O-220AB
O-220AB.
irf 100v 200A
transistor irf 840
IRF 840 equivalent
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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OCR Scan
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PDF
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
EHA07W
rps300
flS35fciGS
235bD5
D1HD43H
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MARKING GA
Abstract: Q62702-A779 Q62702-A778
Text: SIEM EN S Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications • High breakdown voltage Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering Code tape and reel GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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OCR Scan
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PDF
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
WA07007
MARKING GA
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MARKING GA
Abstract: A779 baw78c
Text: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8
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OCR Scan
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62702-A675
62702-A677
62702-A779
62702-A109
MARKING GA
A779
baw78c
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