Zener diode smd marking code 51 y
Abstract: MM5Z3V9
Text: Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V List List. 1 Package outline. 2 Features. 2
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MM5Z75V
MIL-STD-750D
METHOD-1038
JESD22-A102
METHOD-1051
METHOD-1056
1000hrs.
Zener diode smd marking code 51 y
MM5Z3V9
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MM5Z3V9
Abstract: No abstract text available
Text: Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V List List. 1 Package outline. 2 Features. 2
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MM5Z75V
MIL-STD-202F
METHOD-208
MIL-STD-750D
METHOD-1038
JESD22-A102
METHOD-1051
1000hrs.
MM5Z3V9
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PD3Z284C4V7
Abstract: zener diode marking 0T marking code z2
Text: SPICE MODELS: PD3Z284C2V4 PD3Z284C2V7 PD3Z284C3V0 PD3Z284C3V3 PD3Z284C3V6 PD3Z284C3V9 PD3Z284C4V3 PD3Z284C4V7 PD3Z284C5V1 PD3Z284C5V6 PD3Z284C6V2 PD3Z284C6V8 PD3Z284C7V5 PD3Z284C8V2 PD3Z284C9V1 PD3Z284C10 PD3Z284C11 PD3Z284C12 PD3Z284C13 PD3Z284C15 PD3Z284C16 PD3Z284C18 PD3Z284C20 PD3Z284C22 PD3Z284C24 PD3Z284C27 PD3Z284C30
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PD3Z284C2V4
PD3Z284C2V7
PD3Z284C3V0
PD3Z284C3V3
PD3Z284C3V6
PD3Z284C3V9
PD3Z284C4V3
PD3Z284C4V7
PD3Z284C5V1
PD3Z284C5V6
PD3Z284C4V7
zener diode marking 0T
marking code z2
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MARKING CODE 0Z
Abstract: PD3Z284C2V7 zener diode marking 0T IR diodes 0B
Text: PD3Z284C2V4 - PD3Z284C39 0.5W SURFACE MOUNT ZENER DIODE PowerDI ä323 NEW PRODUCT Lead-free Green Features Mechanical Data • · · · · · · Case: PowerDIä323 · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Polarity: Cathode Band Planar Die Construction
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PD3Z284C2V4
PD3Z284C39
J-STD-020C
AEC-Q101
MIL-STD-202,
DS30702
MARKING CODE 0Z
PD3Z284C2V7
zener diode marking 0T
IR diodes 0B
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Diodes Incorporated 17-33
Abstract: MARKING CODE 0Z marking code C15 PD3Z284C11 ZENER 5W J-STD-020D PD3Z284C2V7 .C36 marking
Text: PD3Z284C2V4 - PD3Z284C39 0.5W SURFACE MOUNT ZENER DIODE PowerDI 323 Please click here to visit our online spice models database. Features • • • • • Mechanical Data Case: PowerDI®323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
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PD3Z284C2V4
PD3Z284C39
J-STD-020D
MIL-STD-202,
AEC-Q10does
DS30702
Diodes Incorporated 17-33
MARKING CODE 0Z
marking code C15
PD3Z284C11
ZENER 5W
J-STD-020D
PD3Z284C2V7
.C36 marking
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Untitled
Abstract: No abstract text available
Text: PD3Z284C2V4 - PD3Z284C39 0.5W SURFACE MOUNT ZENER DIODE PowerDI 323 Features • • • • • Mechanical Data Case: PowerDI®323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D
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PD3Z284C2V4
PD3Z284C39
J-STD-020D
MIL-STD-202,
AEC-Q101
DS30702
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Zener diode smd marking 5j
Abstract: MM5Z3V9 smd zener diode code 5F
Text: Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V List List. 1 Package outline. 2 Features. 2
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MM5Z75V
MIL-STD-750D
METHOD-1026
JESD22-A102
METHOD-1051
METHOD-1056
1000hrs.
Zener diode smd marking 5j
MM5Z3V9
smd zener diode code 5F
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ UFM31L THRU THRU 3.0A SUFRACE MOUNT EFFICIENT FAST RECTIFIERS-50-600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SMC-L PACKAGE FM1200-M+ UFM38L Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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RECTIFIERS-50-600V
OD-123+
FM120-M+
UFM31L
FM1200-M
OD-123H
50min
RS-481-A
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS USE D3ZxxBF Series PD3Z284C2V4 - PD3Z284C39 0.5W SURFACE MOUNT ZENER DIODE PowerDI323 Features Mechanical Data • Planar Die Construction Ultra-Small Surface Mount Package Lead Free By Design, RoHS Compliant Note 1
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PD3Z284C2V4
PD3Z284C39
PowerDI323
AEC-Q101
PowerDI323
J-STD-020D
MIL-STD-202,
PD3Z284C2V4
DS32239
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marking code diode 0t
Abstract: No abstract text available
Text: FM ^^ÊÊÊjÊÊÊ^ CLL2003 HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.
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CLL2003
100mA
200mA
marking code diode 0t
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marking 2U 77 diode
Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
Text: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1
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ERC84-009
marking 2U 77 diode
marking DIODE 2U 04
marking code IAM
12CT
diode marking code 7-7-7-7
marking 2U diode
marking DIODE 2U
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U9024N
Abstract: BSS 250 IRFR P-Channel MOSFET
Text: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2
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IRFR9024N)
IRFU9024N)
1RFR/U9024N
4A5545E
002flL07
U9024N
BSS 250
IRFR P-Channel MOSFET
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L3103L
Abstract: 0T1S IRF4905L
Text: PD-9.1478A International 3BR Rectifier IRF4905S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology S urface M ount IRF4905S Low -profile through-hole (IRF4905L) 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated
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IRF4905S)
IRF4905L)
IRF4905S/L
L3103L
0T1S
IRF4905L
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Untitled
Abstract: No abstract text available
Text: P D - 9 .1 6 1 0 A International IO R Rectifier IRFR/U5505 PRELIMINARY HEXFET Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount IRFR5505 • Straight Lead (IRFU5505) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated
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IRFR/U5505
IRFR5505)
IRFU5505)
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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Untitled
Abstract: No abstract text available
Text: P h ilips Sem iconductors Product specification High-speed double diode BAS28 FEATURES DESCRIPTION • Small plastic SMD package The BAS28 consists of two high-speed switching diodes, fabricated in planar technology, and encapsulated in the small plastic SMD S O U 43 package. The diodes
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BAS28
BAS28
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Untitled
Abstract: No abstract text available
Text: International PD9'1376A TOR Rectifier preliminary IRL2910S HEXFET Power MOSFET • Logic-Level G ate Drive • • • • • • • Surface Mount Advanced Process Technology Ultra Low O n-R esistance Dynam ic dv/dt Rating 175 °C Operating Tem perature
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IRL2910S
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Untitled
Abstract: No abstract text available
Text: kiternational IM I Rectifier PD 9.1382 IRFP054N PRELIMINARY HEXFET Power M OSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSS = 55V ^ D S o n = 0 .0 1 2 ÎÎ lD = 72A Description
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IRFP054N
5545E
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Untitled
Abstract: No abstract text available
Text: PD-9.1006 In tern atio n al k ?r R e c tifie r IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description
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IRF644S
SMD-220
SMD-220
D-6380
DD51453
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A17a smd
Abstract: No abstract text available
Text: PD-9.1090 International j i g R ectifier_ IR L 6 4 0 S HEXFET Power MOSFET • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive • RDS on S pecified at V g s =4V & 5V
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SMD-220
SMD-220
D-6380
A17a smd
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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Melcher M 3000
Abstract: MTBF SIEMENS Melcher M 2000 Melcher AG Melcher 1000 Melcher m 1000 15 v melcher m series Melcher family K 1000 melcher DC- DC Converter
Text: IMR 15-Family DC-DC Converters <40 W DC-DC Converters Benign Environment IMR 15-Family input to output isolation test voltage500 V OC Single or double output • Input voltage range 2:1 • Input filter built-in • High efficiency up to 82% • Short-circuit-proof
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15-Family
voltage500
Melcher M 3000
MTBF SIEMENS
Melcher M 2000
Melcher AG
Melcher 1000
Melcher m 1000 15 v
melcher m series
Melcher family K 1000
melcher DC- DC Converter
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1Actc
Abstract: No abstract text available
Text: PD 9.1434 International Iö R Rectifier IRF5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistancw Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channet Fully Avalanche Rated V d s s = -1 0 0 V RüS on = 0.06Q
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IRF5210
O-220
1Actc
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007H
Abstract: AN-994 IRF530S IRL2203N IRL2203S T35 diode DIODE marking code SJ
Text: PRELIMINARY International I R Rectifier PD 9.1091 A IRL2203S HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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