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    MARKING CODE CE SOT23 Search Results

    MARKING CODE CE SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    MARKING CODE CE SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Marking Code FGs

    Abstract: No abstract text available
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3  For general AF applications  High collector current  High current gain  Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23


    Original     		PDF BCV27, BCV47 BCV26, BCV46 VPS05161 BCV27 BCV47 Marking Code FGs

    MARKING SOT23 dbs

    Abstract: No abstract text available
    Text: BCW67, BCW68 PNP Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary types: BCW66. NPN Type Marking Pin Configuration Package BCW67A DAs 1=B 2=E 3=C SOT23 BCW67B


    Original     		PDF BCW67, BCW68 BCW66. BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H BCW67 MARKING SOT23 dbs

    Untitled

    Abstract: No abstract text available
    Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B


    Original     		PDF BCW66 BCW68 BCW66F BCW66G BCW66H

    bcw66

    Abstract: No abstract text available
    Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B


    Original     		PDF BCW66 BCW68 BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* bcw66

    egs SOT23

    Abstract: No abstract text available
    Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B


    Original     		PDF BCW66 BCW68 BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* BCW66 BCW66K egs SOT23

    SOT23-5 pwm generator

    Abstract: AP1624 FDS6612 SS240 345KHZ
    Text: AP1624 PWM/PFM Dual Mode Step-up DC/DC Controller „ Features „ General Descriptions - Input Voltage Range: 0.9~6V - PWM/PFM Switching Control - High Efficiency: 90% - Oscillator Frequency: 300kHz（±15%） - Stand-by Current: ISTB=3µA.（Typ.） - Pb-Free Package: SOT23-5


    Original     		PDF AP1624 300kHz OT23-5 AP1624 SOT23-5 pwm generator FDS6612 SS240 345KHZ

    SOT23-5 pwm generator

    Abstract: PFM SOT23 SS240 marking code 10 sot23 marking code ce SOT23 PWM 003 AP1624 FDS6612 AF230
    Text: AP1624 PWM/PFM Dual Mode Step-up DC/DC Controller „ Features „ General Descriptions - Input Voltage Range: 0.9~6V - PWM/PFM Switching Control - High Efficiency: 90% - Oscillator Frequency: 300kHz（±15%） - Stand-by Current: ISTB=3µA.（Typ.） - Pb-Free Package: SOT23-5


    Original     		PDF AP1624 300kHz OT23-5 AP1624 SOT23-5 pwm generator PFM SOT23 SS240 marking code 10 sot23 marking code ce SOT23 PWM 003 FDS6612 AF230

    Untitled

    Abstract: No abstract text available
    Text: SMBTA56/ MMBTA56 PNP Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA06 / MMBTA06 NPN 2 1 Type SMBTA56/ MMBTA56 Marking s2G Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBTA56/ MMBTA56 SMBTA06 MMBTA06 VPS05161

    transistor DKS

    Abstract: BCX42
    Text: BCX42 PNP Silicon AF and Switching Transistor • For general AF applications • High breakdown voltage 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCX41 NPN Type BCX42 Marking DKs Pin Configuration 1=B 2=E Package SOT23 3=C


    Original     		PDF BCX42 BCX41 transistor DKS BCX42

    Untitled

    Abstract: No abstract text available
    Text: SMBTA56/ MMBTA56 PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBTA06 / MMBTA06 NPN Type SMBTA56/ MMBTA56 Marking s2G 1 Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBTA56/ MMBTA56 SMBTA06 MMBTA06

    BCX41

    Abstract: No abstract text available
    Text: BCX41 NPN Silicon AF and Switching Transistor • For general AF applications • High breakdown voltage 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCX42 PNP Type BCX41 Marking EKs Pin Configuration 1=B 2=E Package SOT23 3=C


    Original     		PDF BCX41 BCX42 BCX41

    BCV26

    Abstract: BCV27 BCV46 BCV47
    Text: BCV26, BCV46 PNP Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV27, BCV47 NPN Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs


    Original     		PDF BCV26, BCV46 BCV27, BCV47 BCV26 BCV26 BCV27 BCV46 BCV47

    MMBTA06 S1G

    Abstract: No abstract text available
    Text: SMBTA06/ MMBTA06 NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBTA 56 / MMBTA56 PNP Type SMBTA06/ MMBTA06 Marking s1G Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBTA06/ MMBTA06 MMBTA56 MMBTA06 S1G

    Untitled

    Abstract: No abstract text available
    Text: BCV27, BCV47 NPN Silicon Darlington Transistors • For general AF applications • High collector current 2 3 • High current gain 1 • Complementary types: BCV26, BCV46 PNP Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs


    Original     		PDF BCV27, BCV47 BCV26, BCV46 BCV27 BCV47

    marking code AABJ

    Abstract: sot23 mark code AAAM marking code aaam aabp AABB SOT23 5
    Text: 19-1658; Rev 5; 10/11 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor


    Original     		PDF MAX6365 MAX6368 MAX6368 marking code AABJ sot23 mark code AAAM marking code aaam aabp AABB SOT23 5

    marking code AABJ

    Abstract: marking code AACD code marking aabt AABV AACE aabi sot23 mark code AAAM MAX6365 MAX6366 MAX6368
    Text: 19-1658; Rev 4; 5/09 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor


    Original     		PDF MAX6365 MAX6368 MAX6368 marking code AABJ marking code AACD code marking aabt AABV AACE aabi sot23 mark code AAAM MAX6366

    MARKING AABB

    Abstract: marking code AABJ AABF SOT23 MARKING CODE
    Text: 19-1658; Rev 5; 10/11 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor


    Original     		PDF MAX6365â MAX6368 MAX6365) MAX6368 MARKING AABB marking code AABJ AABF SOT23 MARKING CODE

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


    OCR Scan     		PDF 2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F

    SMBT4403

    Abstract: SMBT5401 SMBT4401 marking 2G SOT23
    Text: SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - SOT-23 PACKAGE CASE 37 SURGE PART NUMBER V CEO V l o p e r a t in g ^C F S A T y /s & Vv ce ! G to r ag e tem per atu r e ’ c es w Marking Code Volts SMBT2222A 1P 40 1 0 0 -3 0 0 10/1 50 1.0 SMBT3904 SMBT4401


    OCR Scan     		PDF OT-23 SMBT2222A SMBT3904 SMBT4401 SMBTA05 SMBTA06 SMBT5551 SMBTA42 OT-23 SMBT4403 SMBT5401 marking 2G SOT23

    marking code ce SOT23

    Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
    Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A


    OCR Scan     		PDF Transistors/SOT23 MMBT2222A IMBT/MMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 Appl45 80jjs; marking code ce SOT23 MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE

    MOSFET MARKING 3F

    Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
    Text: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz


    OCR Scan     		PDF Transistors/SOT23 MMBT2222A BT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 BS817 BS850 MOSFET MARKING 3F sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23

    MAM25S

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES PMBT5550 PINNING • Low current max. 300 mA PIN • Low voltage (max. 140 V). 1 2 emitter APPLICATIONS 3 collector DESCRIPTION base • Telephony. DESCRIPTION — 3 NPN high-voltage transistor in a SOT23 plastic package.


    OCR Scan     		PDF PMBT5550 PMBT5401. MAM25S MAM25S

    Untitled

    Abstract: No abstract text available
    Text: PMBT5551 SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 package. QUICK REFERENCE DATA Collector-base voltage open emitter VCBO max. Collector-emitter voltage (open base)


    OCR Scan     		PDF PMBT5551 PMBT5551

    UK39

    Abstract: ABWF ABWG ABVZ ABTK ABIK ABGV ABAZ ABEE MARKING ABHO
    Text: JV X Æ X A JV i 19-1145; RevO; 9/96 5-Pin, M ultiple-Input, Program m able R e s e t ICs T hese d e v ic e s are a va ila b le in a SOT23-5 p a cka g e , have factory-program m ed reset thresholds from 2.5V to 5.0V in 100mV increm ents , and feature four power-on


    OCR Scan     		PDF 140ms 1120ms UK39 ABWF ABWG ABVZ ABTK ABIK ABGV ABAZ ABEE MARKING ABHO