marking code CB sot23
Abstract: voltage divider 100k SOT23 MARKING 50k 50K MARKING SOT23
Text: MODEL SS103VD Voltage divider circuit Thin film resistor network RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Passivation coating provides protection in humid environments Industry Standard Packaging 3 lead SOT23 Ratio Tolerances
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SS103VD
MIL-STD-2002,
MIL-R-83401)
OT-23
marking code CB sot23
voltage divider 100k
SOT23 MARKING 50k
50K MARKING SOT23
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egs SOT23
Abstract: No abstract text available
Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B
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BCW66
BCW68
BCW66F
BCW66KF*
BCW66G
BCW66KG*
BCW66H
BCW66KH*
BCW66
BCW66K
egs SOT23
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bcw66
Abstract: No abstract text available
Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66KF* EFs 1=B
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BCW66
BCW68
BCW66F
BCW66KF*
BCW66G
BCW66KG*
BCW66H
BCW66KH*
bcw66
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Untitled
Abstract: No abstract text available
Text: BCW66 NPN Silicon AF Transistors • For general AF applications • High current gain 2 3 • Low collector-emitter saturation voltage 1 • Complementary type: BCW68 PNP Type Marking Pin Configuration Package BCW66F EFs 1=B 2=E 3=C SOT23 BCW66G EGs 1=B
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BCW66
BCW68
BCW66F
BCW66G
BCW66H
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marking code CB sot23
Abstract: 0345K MIL-R-83401 SS103
Text: SS103 SERIES Thin Film Resistor Network Voltage Divider Circuit RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Industry Standard Packaging 3 lead SOT23 Ratio Tolerances < ±0.05% TCR Tracking Tolerances < ±5 ppm/°C ELECTRICAL1
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SS103
100Vdc
MIL-STD-2002,
-25dB
MIL-R-83401)
Mechan007
OT-23
marking code CB sot23
0345K
MIL-R-83401
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ss103
Abstract: No abstract text available
Text: SS103 SERIES Thin Film Resistor Network Voltage Divider Circuit RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Industry Standard Packaging 3 lead SOT23 Ratio Tolerances < ±0.05% TCR Tracking Tolerances < ±5 ppm/°C ELECTRICAL1
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SS103
MIL-STD-2002,
100Vdc
-25dB
MIL-R-83401)
OT-23
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POLAR0.8
Abstract: Marking code mps RB400
Text: WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers reversethat leakage
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FM120-M+
MMBTH10LT1
FM1200-M+
OD-123+
OD-123H
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
POLAR0.8
Marking code mps
RB400
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marking 2u
Abstract: marking code 10 sot23 S2V 3 BCW66 SMBTA64
Text: SMBTA64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking SMBTA64 s2V Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage
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SMBTA64
VPS05161
marking 2u
marking code 10 sot23
S2V 3
BCW66
SMBTA64
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MBTA42
Abstract: 12p sot-23
Text: WILLAS FM120-M+ THRU MMBTA4xLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V High Voltage Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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FM120-M+
FM1200-M+
OD-123+
MMBTA42LT1
OT-23
3000/Tape
FM120-MH
FM130-MH
FM140-MH
FM150-MH
MBTA42
12p sot-23
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SOT23-5 pwm generator
Abstract: AP1624 FDS6612 SS240 345KHZ
Text: AP1624 PWM/PFM Dual Mode Step-up DC/DC Controller Features General Descriptions - Input Voltage Range: 0.9~6V - PWM/PFM Switching Control - High Efficiency: 90% - Oscillator Frequency: 300kHz（±15%） - Stand-by Current: ISTB=3µA.（Typ.） - Pb-Free Package: SOT23-5
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AP1624
300kHz
OT23-5
AP1624
SOT23-5 pwm generator
FDS6612
SS240
345KHZ
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SOT23-5 pwm generator
Abstract: PFM SOT23 SS240 marking code 10 sot23 marking code ce SOT23 PWM 003 AP1624 FDS6612 AF230
Text: AP1624 PWM/PFM Dual Mode Step-up DC/DC Controller Features General Descriptions - Input Voltage Range: 0.9~6V - PWM/PFM Switching Control - High Efficiency: 90% - Oscillator Frequency: 300kHz（±15%） - Stand-by Current: ISTB=3µA.（Typ.） - Pb-Free Package: SOT23-5
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AP1624
300kHz
OT23-5
AP1624
SOT23-5 pwm generator
PFM SOT23
SS240
marking code 10 sot23
marking code ce SOT23
PWM 003
FDS6612
AF230
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MBT2222 equivalent
Abstract: MARKING M1B
Text: WILLAS FM120-M+ THRU MMBT2222 A LT1 FM1200-M+ General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features NPN •Silicon Batch process design, excellent power dissipation offers
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FM120-M+
MMBT2222
FM1200-M+
OD-123+
OD-123H
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
MBT2222 equivalent
MARKING M1B
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MBTA92
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU MMBTA9xLT1 FM1200-M+ 1.0A SURFACE SCHOTTKY BARRIER RECTIFIERS -20V- 200V HighMOUNT Voltage Transistor Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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FM120-M+
FM1200-M+
OD-123+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
MBTA92
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Untitled
Abstract: No abstract text available
Text: SMBTA14/ MMBTA14 NPN Silicon Darlington Transistor • High DC current gain • High collector current 2 3 • Low collector-emitter saturation voltage Type SMBTA14/ MMBTA14 Marking s1N 1 Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter
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SMBTA14/
MMBTA14
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Untitled
Abstract: No abstract text available
Text: D AC 7 512 DAC7571 www.ti.com SLAS374D – FEBRUARY 2003 – REVISED JANUARY 2014 +2.7 V to +5.5 V, I2C INTERFACE RECEIVE ONLY , VOLTAGE OUTPUT, 12-BIT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC7571 FEATURES 1 • • • • • • • 2 • •
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DAC7571
SLAS374D
12-BIT
DAC7571s
DAC7571
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BSS79
Abstract: BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C
Text: BSS80, BSS82 PNP Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E
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BSS80,
BSS82
BSS79,
BSS81
BSS80B
BSS80C
BSS82B
BSS82C
BSS80
BSS79
BSS80
BSS80B
BSS80C
BSS81
BSS82
BSS82B
BSS82C
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 DD3Sfi62 AbO H A P X N AUER PHILIPS/DISCRETE PMBT5551 b7E 1> ;v SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 envelope. QUICK REFERENCE DATA
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bbS3T31
DD3Sfi62
PMBT5551
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marking code ce SOT23
Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A
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Transistors/SOT23
MMBT2222A
IMBT/MMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
Appl45
80jjs;
marking code ce SOT23
MOSFET MARKING 3F
marking code 3a sot23
CE MARKING CODE
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YL2 sot23
Abstract: bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ, 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.
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BF547
bas500
YL2 sot23
bb407
Y1 TRANSISTOR MARKING SOT23 5
8B397
PHILIPS bf547
BF547
MBB412
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IMBT4403
Abstract: IMBT4401 5n80 IMBT2222 BC817-16 BC817-25 BC817-40 BC846A IMBT2222A IMBT3903
Text: TAIWAN LITON ELECTRONIC kiAirr Afl3sb'ìs ooo4oa3 ?ifi « t l i t D ^ CÌE SURFACE MOUNT TRANSISTORS 'Z'l-D0 N P N T R A N S IS T O R S - SOT-23 PACKAGE 310 m W DISSIPATION RATING See Note 4) OPERATING/STORAGE TEMPERATURE -55°C to +150°C CHARACTERISTICS @ TA 25°C
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G0D40fl3
OT-23
IMBT3903
IMBT3904
IMBT4400
10Ol3Â
IMBT4401
10CX3>
IMBT2222
BC807-16
IMBT4403
5n80
BC817-16
BC817-25
BC817-40
BC846A
IMBT2222A
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IMBT4401
Abstract: No abstract text available
Text: DIODES INC 32E D • 2Ô4Ô7T3 0DDD3b3 S * D I I SURFACE MOUNT TRANSISTORS NPN T R A N SIST O R S - TO-236 SOT-23 PACKAGE 310 mW DISSIPATION RATING (See Note 4) 1M 1N 6T 6U 6R 6S h FE @ 50-150 100-300 50-150 100-300 100-300 100-300 V ce/ I c VcE SAT V /m A
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O-236
OT-23)
IMBT3903
IMBT3904
IMBT4400
IMBT4401
IMBT2222
IMBT2222A
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FMMT918
Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
Text: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid
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FMMT918
OT-23
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
BCW67B
FMMT-A42
BCW67C
FMMT918
marking of m7 diodes
transistor EH sot-23
A12 marking
sot-23 MARKING CODE G1
3B sot23 marking
m6 marking transistor sot-23
ferranti
marking code CB sot23
transistor marking code 7E SOT-23
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Untitled
Abstract: No abstract text available
Text: PMBT5551 SILICON NPN HIGH-VOLTAGE TRANSISTOR NPN high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT23 package. QUICK REFERENCE DATA Collector-base voltage open emitter VCBO max. Collector-emitter voltage (open base)
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PMBT5551
PMBT5551
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sot-23 MARKING CODE G1
Abstract: C5 MARKING TRANSISTOR sot 23 marking code 2t BFS20 sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes
Text: FERRANTI semiconductors BFS20 NPN Silicon Planar VHF Transistor DESCRIPTION These devices are intended fo r IF and V H F applications w here lo w feedback capacitance is required. Encapsulated in the popular SOT-23 package these devices are designed specifically fo r use in thin and thick film
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BFS20
OT-23
BFS20
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
BCW67B
FMMT-A42
sot-23 MARKING CODE G1
C5 MARKING TRANSISTOR
sot 23 marking code 2t
sot-23 Marking G1
MARKING CODE DH SOT 23
marking code C5 sot23
marking H6 sot 23
marking code CB sot23
marking of m7 diodes
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