C5 marking code
Abstract: No abstract text available
Text: UDZS SERIES Surface Mount Zener Diode Voltage Range 3.6 to 36 Volts 200m Watts Power Dissipation SOD-323F 0.073 1.85 0.069(1.75) Compact, 2-pin mini-mold type for high-density mounting. (UMD2) Non-wire bonding structure improves. High demand voltage range (3.6V~36V) is
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OD-323F
OD-323F,
MIIL-STD-202,
C5 marking code
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Untitled
Abstract: No abstract text available
Text: UDZS Series 200mW Surface Mount Zener Diode Voltage Range 3.6 to 36Volts 200m Watts Power Dissipation SOD-323F FEATURES Compact, 2-pin mini-mold type for high-density mounting. UMD2 Most popular voltage range (3.6V to 36V) Manufactured on highly-efficient non-wire-bonding
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200mW
36Volts
OD-323F
OD-323F,
MIIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: UDSZ Series 200mW Surface Mount Zener Diode Voltage Range 3.6 to 36Volts 200m Watts Power Dissipation SOD-323F FEATURES Compact, 2-pin mini-mold type for high-density mounting. UMD2 Most popular voltage range (3.6V to 36V) Manufactured on highly-efficient non-wire-bonding
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200mW
36Volts
OD-323F
OD-323F,
MIIL-STD-202,
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zener 4c3
Abstract: zener 5c1 ZENER CODE 51b zener 2a7 4C7 marking code zener 10D zener 4B7 20D22A DIODES 33D marking code 6C8
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
RB500V-40
zener 4c3
zener 5c1
ZENER CODE 51b
zener 2a7
4C7 marking code
zener 10D
zener 4B7
20D22A
DIODES 33D
marking code 6C8
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z10b
Abstract: Z6A2 Z13B z6c8 Z18B zener z27b Z30C 51a zener Z16B z15a
Text: GLZJ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA 0.020(0.5) 0.012(0.3)
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500mW
2002/95/EC
MIL-STD-750,
2012-REV
RB500V-40
z10b
Z6A2
Z13B
z6c8
Z18B
zener z27b
Z30C
51a zener
Z16B
z15a
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zener 4c3
Abstract: zener gdz zener gdz marking
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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GDZ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
2012-REV
RB500V-40
zener 4c3
zener gdz
zener gdz marking
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zener 6c2
Abstract: zener 4c3 zener 5c1 marking code 6C8 zener 9A1 zener 9c1 zener 5B6 DIODES 33D 6c2 zener 4C3 zener
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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GDZ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
2012-REV
RB500V-40
zener 6c2
zener 4c3
zener 5c1
marking code 6C8
zener 9A1
zener 9c1
zener 5B6
DIODES 33D
6c2 zener
4C3 zener
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zener gdz
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2013-REV
zener gdz
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6b2 zener
Abstract: Marking 4c7 Tube 5A6 DIODES 33D
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
6b2 zener
Marking 4c7
Tube 5A6
DIODES 33D
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Untitled
Abstract: No abstract text available
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2011/65/EU
MIL-STD-750,
2011-REV
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zener gdz marking
Abstract: No abstract text available
Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives MECHANICAL DATA
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GDZ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2014-REV
zener gdz marking
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marking code 9.1b
Abstract: marking code 2j 475J
Text: ELECTRONIC EQUIPMENT FILM CAPACITOR @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @A little hum is produced when applied AC voltage. ?SPECIFICATIONS Items Characteristics -40K+105C 250K800Vdc P5% J or P10%(K) No degradation, at 150% of rated voltage shall be applied for 60 seconds.
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250K800Vdc
30000MO
10000OF
E1003B
marking code 9.1b
marking code 2j
475J
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Untitled
Abstract: No abstract text available
Text: FILM CAPACITORS ELECTRONIC EQUIPMENT FILM CAPACITOR @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @A little hum is produced when applied AC voltage. ?SPECIFICATIONS Items Characteristics -40K+105C 250K800Vdc P5% J or P10%(K) No degradation, at 150% of rated voltage shall be applied for 60 seconds.
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250K800Vdc
30000MO
10000OF
20min.
800Vdc
E1003C
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC EQUIPMENT FILM CAPACITOR @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @A little hum is produced when applied AC voltage. ?SPECIFICATIONS Items Characteristics -40K+105C 250K800Vdc P5% J or P10%(K) No degradation, at 150% of rated voltage shall be applied for 60 seconds.
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250K800Vdc
30000MO
10000OF
20min.
800Vdc
E1003C
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC EQUIPMENT FILM CAPACITOR @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @Downsizing of TACB series. ?SPECIFICATIONS Items Characteristics -40K+105C 250K1000Vdc P5% J or P10%(K) No degradation, at 150% of rated voltage shall be applied for 60 seconds.
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250K1000Vdc
30000MO
10000OF
1000Vdc
E1003C
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Untitled
Abstract: No abstract text available
Text: FILM CAPACITORS ELECTRONIC EQUIPMENT FILM CAPACITOR @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @Downsizing of TACB series. ?SPECIFICATIONS Items Characteristics -40K+105C 250K1000Vdc P5% J or P10%(K) No degradation, at 150% of rated voltage shall be applied for 60 seconds.
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250K1000Vdc
30000MO
10000OF
1000Vdc
E1003C
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CAPACITOR marking code 2j
Abstract: No abstract text available
Text: ELECTRONIC EQUIPMENT FILM CAPACITOR @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @Downsizing of TACB series. ?SPECIFICATIONS Items Characteristics -40K+105C 250K1000Vdc P5% J or P10%(K) No degradation, at 150% of rated voltage shall be applied for 60 seconds.
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250K1000Vdc
30000MO
10000OF
E1003B
CAPACITOR marking code 2j
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CAPACITOR marking code 2j
Abstract: No abstract text available
Text: ELECTRONIC EQUIPMENT FILM CAPACITOR @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @A little hum is produced when applied AC voltage. ?SPECIFICATIONS Items Characteristics -40K+105C 630K4000Vdc P3% H or P5%(J) : Equal or less than 2000Vdc.
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630K4000Vdc
2000Vdc.
3150Vdc.
30000MO
10000OF
E1003B
CAPACITOR marking code 2j
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Untitled
Abstract: No abstract text available
Text: FILM CAPACITORS ELECTRONIC EQUIPMENT FILM CAPACITOR @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @A little hum is produced when applied AC voltage. ?SPECIFICATIONS Items Characteristics -40K+105C 630K4000Vdc P3% H or P5%(J) : Equal or less than 2000Vdc.
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630K4000Vdc
2000Vdc.
3150Vdc.
30000MO
3150Vdc
4000Vdc
E1003C
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC EQUIPMENT FILM CAPACITOR @Maximum operating temperature 105C. @Allowable temperature rise 15C max. @A little hum is produced when applied AC voltage. ?SPECIFICATIONS Items Characteristics -40K+105C 630K4000Vdc P3% H or P5%(J) : Equal or less than 2000Vdc.
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630K4000Vdc
2000Vdc.
3150Vdc.
30000MO
10000OF
E1003C
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zener diode 33B
Abstract: marking code 15b 30B4 22b zener diode
Text: GDZ Series Vishay Semiconductors New Product formerly General Semiconductor Zener Diode VZ Range 2.0 to 36V Power Dissipation 200mW SOD-323 .012 0.3 .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Mounting Pad Layout Top View 0.055 (1.40) 0.047 (1.20)
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200mW
OD-323
OD-323
D5/10K
30K/box
Powe22
29-Apr-02
zener diode 33B
marking code 15b
30B4
22b zener diode
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27B3-2
Abstract: marking code 9.1b 22b zener diode 20B zener diode zener diode 33B zener 27b 33-20 diode 27B zener diode DIODE MARKING CODE gdz ZENER SOD-323
Text: GDZ Series Zener Diode ct u d ro P New SOD-323 Mounting Pad Layout SOD-323 .012 0.3 0.055 (1.40) Top View 0.062 (1.60) 0.047 (1.20) .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band .006 (0.15) max. .043 (1.1) .004 (0.1) max. .059 (1.5) .049 (1.25)
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OD-323
OD-323
D5/10K
mou100
27B3-2
marking code 9.1b
22b zener diode
20B zener diode
zener diode 33B
zener 27b
33-20 diode
27B zener diode
DIODE MARKING CODE gdz
ZENER SOD-323
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Si5484DU
Abstract: Si5484DU-T1-GE3 si5484
Text: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package
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Si5484DU
Si5484DU-T1-GE3
18-Jul-08
si5484
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ZP33A
Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Text: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=
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00-4KQ
DO-34
RB441Q
RB721Q
DO-340USD]
RB100A
T0220FP
RB015T-40
R8026T-40
1N4146
ZP33A
TZP33A
zp 33a
1n9638
zp 278
1N52438
TZP10A
MTZJ 188
MTZJ 248
1N6233
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