C5440
Abstract: No abstract text available
Text: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional
|
Original
|
OT23-3L
5/50ns)
UL94V-0
D-74638
C5440
|
PDF
|
dmp2100u
Abstract: 35P marking DMP2100U-7
Text: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Package V BR DSS RDS(ON) MAX -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -4.3A -4.0A -2.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
DMP2100U
AEC-Q101
DS35718
dmp2100u
35P marking
DMP2100U-7
|
PDF
|
WE-TVS
Abstract: 824021 74638 marking JB sot23 wetvs
Text: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional
|
Original
|
OT23-3L
5/50ns)
OT23-3L
UL94V-0
D-74638
WE-TVS
824021
74638
marking JB sot23
wetvs
|
PDF
|
T2S SOT-23
Abstract: 5A MARKING CODE SOT23 PJDLC03
Text: PJDLC03~PJDLC24 POWER SOT-23 400 Watts Unit：inch mm ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEEDDATA LINES 0.120(3.04) This transient overvoltage suppressor is intended to prodect sensitive equipment againset electrostatic discharge events as well to offer a minmum lnsertion loss
|
Original
|
PJDLC03
PJDLC24
OT-23
OT-23,
2010-REV
RB500V-40
T2S SOT-23
5A MARKING CODE SOT23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PJDLC03~PJDLC24 3.3 to 24 Volts POWER 400 Watts ULTRA LOW CAPACITANCE DUAL TRANSIET VOLTAGE SUPPRESSOR FOR HIGH SPEED DATA LINES 0.006 0.15 MIN. VOLTAGE 0.120(3.04) 0.110(2.80) This transient overvoltage suppressor is intended to prodect sensitive equipment
|
Original
|
PJDLC03
PJDLC24
OT-23,
2013-REV
|
PDF
|
SMS05C
Abstract: SMS12C SMS15C SMS24C 652 diode TRANSIENT
Text: SMS05C TVS Diode Array For ESD and Latch-Up Protection thru SMS24C TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com December 17, 1998 DESCRIPTION The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to
|
Original
|
SMS05C
SMS24C
OT23-6L
SMS05C
SMS12C
SMS15C
SMS24C
652 diode TRANSIENT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302 Pin Description 20V/5A , RDS ON =20mΩ(typ.) @ VGS =4.5V RDS(ON) =40mΩ(typ.) @ VGS =2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
|
Original
|
TDM2302
OT23-3L
TDM2302â
TDM2302
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation
|
Original
|
FMMT634
900mA
625mW
FMMT734
AEC-Q101
J-STD-020
DS33115
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DESD24VS2SO Features Mechanical Data • Provides ESD Protection per IEC 61000-4-2 Standard: • Air – ±30kV, Contact – ±30kV • • • 230W Peak Power Dissipation Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
|
Original
|
DESD24VS2SO
J-STD-020
MIL-STD-202,
DS36184
|
PDF
|
FMMT634Q
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current
|
Original
|
FMMT634
900mA
625mW
FMMT734
AEC-Q101
DS33115
FMMT634Q
|
PDF
|
RS-423
Abstract: SMS05 SMS12 SMS15 SMS24 data code sot-23 semtech 1998 24v marking code ESD
Text: SMS05 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com August 28, 1998 DESCRIPTION The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to
|
Original
|
SMS05
SMS24
OT23-6L
RS-423
SMS05
SMS12
SMS15
SMS24
data code sot-23 semtech 1998
24v marking code ESD
|
PDF
|
SMS05
Abstract: SMS12 SMS15 SMS24
Text: SMS05 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com October 28, 1998 DESCRIPTION The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to
|
Original
|
SMS05
SMS24
OT23-6L
SMS05
SMS12
SMS15
SMS24
|
PDF
|
tvs MARKING CODE LAYOUT SOT23
Abstract: SMS05C SMS12C SMS15C SMS24C IFA1999
Text: SMS05C TVS Diode Array For ESD and Latch-Up Protection thru SMS24C TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com December 17, 1998 DESCRIPTION The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to
|
Original
|
SMS05C
SMS24C
OT23-6L
tvs MARKING CODE LAYOUT SOT23
SMS05C
SMS12C
SMS15C
SMS24C
IFA1999
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BC807-16/-25/-40 0.3 Watts, PNP Plastic-Encasulate Transistor Small Signal Product Features SOT-23 ◇ Ideally suited for automatic insertion ◇ Epitaxial planar die construction ◇ For switching, AF driver and amplifer applications ◇ Complementary NPN type available BC817
|
Original
|
BC807-16/-25/-40
OT-23
BC817)
J-STD-020C
MIL-STD-202,
008grams
BC807-16
BC807-25
BC807-40
|
PDF
|
|
|
DIODE marking Sl
Abstract: DIODE marking L12 TVS DIODE Vbr SL05 SL24 sl diode diode marking code sl TVS 15 Diode 7SL05 marking code L05 SOT 23
Text: SL05 Low Capacitance TVS Diode For High-Speed Data Interfaces thru SL24 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com Revised - February 15, 1999 DESCRIPTION The SL series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to
|
Original
|
OT-23
DIODE marking Sl
DIODE marking L12
TVS DIODE Vbr
SL05
SL24
sl diode
diode marking code sl
TVS 15 Diode
7SL05
marking code L05 SOT 23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT620 80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 80V IC = 1.5A Continuous Collector Current RCE SAT = 90mΩ for a low equivalent On-Resistance
|
Original
|
FMMT620
625mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS33113
|
PDF
|
tvs MARKING CODE LAYOUT SOT23
Abstract: No abstract text available
Text: SMS05C THRU SMS24C TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description Features Transient protection for data lines to The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to
|
Original
|
SMS05C
SMS24C
SMS12C
SMS15C
SMS12C
SMS12CTG
SMS15C
tvs MARKING CODE LAYOUT SOT23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 29m @VGS = 4.5V • 50m @VGS = 2.5V 100m @VGS = 2.0V Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
|
Original
|
DMN2050L
J-STD-020D
MIL-STD-202,
DS31502
|
PDF
|
MOSFET MARKING 3F
Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Text: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz
|
OCR Scan
|
Transistors/SOT23
MMBT2222A
BT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
BS817
BS850
MOSFET MARKING 3F
sot23 s07
marking 702 sot23
Diode marking CODE 1M
transistor marking 6c
2F PNP SOT23
marking code 2f
2F P marking
NA MARKING SOT23
|
PDF
|
marking code ce SOT23
Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Text: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A
|
OCR Scan
|
Transistors/SOT23
MMBT2222A
IMBT/MMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
Appl45
80jjs;
marking code ce SOT23
MOSFET MARKING 3F
marking code 3a sot23
CE MARKING CODE
|
PDF
|
SOT89 MARKING CODE 3D
Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Text: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK
|
OCR Scan
|
OT143,
OT223
OT323
PXTA27
BCX51
BCW60A
BCW60B
BCX51-10
BCW60C
BCX51-16
SOT89 MARKING CODE 3D
sot89 mark code AE
sot23 mark code AE
3D sot23
SOT89 marking cec
SOT89 MARKING CODE 43
marking 1p sot23
sot23 p04 marking
marking P1R
SOT89 MARKING 5G
|
PDF
|
PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
|
OCR Scan
|
OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
|
PDF
|
Untitled
Abstract: No abstract text available
Text: _ SMS05 j • ,■.» -.„ ,V r " " August 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 TE L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to
|
OCR Scan
|
SMS05
SMS24
L805-498-2111
OT23-6L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: _ SMS05C j • ,■.» - „ ,V r " " September 17, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SM S24C TE L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to
|
OCR Scan
|
SMS05C
L805-498-2111
OT23-6L
|
PDF
|
