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    MARKING CODE 4M Search Results

    MARKING CODE 4M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE 4M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CAPACITOR marking code 2A

    Abstract: CAPACITOR 560uf j 6.3 capacitor 220uF 63vdc capacitor color code CAPACITOR MARKING electrolytic capacitor date code capacitor 2.2uF 63vdc 1500uF 40VDC 150uf 450vdc capacitor 25 v 1000uF electrolytic capacitor
    Text: 07/10 www.niccomp.com | Tech support: [email protected] COMPONENT MARKING SMT VERTICAL CAN ≥ 4mm Ø LIQUID ELECTROLYTE ALUMINUM ELECTROLYTIC CAPACITOR (MARKING SYSTEM EFFECTIVE OCTOBER 1999) YEAR CODE Example shown: NACZ102M6.3V8X10.5TR13F Produced May 2009


    Original     		PDF NACZ102M6 3V8X10 5TR13F CAPACITOR marking code 2A CAPACITOR 560uf j 6.3 capacitor 220uF 63vdc capacitor color code CAPACITOR MARKING electrolytic capacitor date code capacitor 2.2uF 63vdc 1500uF 40VDC 150uf 450vdc capacitor 25 v 1000uF electrolytic capacitor

    Untitled

    Abstract: No abstract text available
    Text: Mechanical Dimensions mm : Recommended Land Pattern: (unit: mm) Marking: Line 1: Frequency (12.288) Line 2:TST Logo + Date Code(“Z” for product code and “D” for date code) + Traceability Code(XX) 12.288 T ZDXX ○ TAI-SAW TECHNOLOGY CO., LTD. TST DCC


    Original     		PDF HC49SMD 288MHz TZ2690A 886-3-4690038D-4701 30min) 06kg/cm EIAJED-4701-3 B-123A

    5L00

    Abstract: TLR3AW TCR75
    Text: LOW Ohm Metal plate Current Sensing Milliohm Chip TLR W STRUCTURE 1 2 3 4 5 6 Low Ohm NE Heat resistant protective coating Resistive element: Metal alloy Termination: Cu metal Solder Marking Underline IDENTIFICATION PRODUCT CODE COATING COLOR MARKING TLR TCR 75


    Original     		PDF 75ppm D-25578 5L00 TLR3AW TCR75

    agilent marking style

    Abstract: 3.3uH 1210 size inductor ne 3225 3R3 COIL 3225 22uh 3225 coil marking code 3R3 Marking code PL
    Text: Inductors FERRITE CORE PLANAR INDUCTOR PL STRUCTURE 1 2 3 4 5 6 W NE Ferrite core Direction mark Marking Resin filler Coil pattern Electrode IDENTIFICATION PRODUCT CODE MARKING BODY COLOR PL Black All these products have Pb-free terminations and meet RoHS requirements


    Original     		PDF

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    682 SOT23 MARKING

    Abstract: resin compound
    Text: Package Details SOT-23F Case Mechanical Drawing Lead Code: Part Marking: 2-4 Character Alpha/Numeric Code Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Note: The SOT-23F uses the same mounting pad geometry as the SOT-23. R3 (4-March 2010)


    Original     		PDF OT-23F OT-23. EIA-481-1-A 682 SOT23 MARKING resin compound

    Untitled

    Abstract: No abstract text available
    Text: KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity • Fast Switching Speed • Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		PDF KSB1121 KSD1621 OT-89 KSB1121

    Standard EIA-481-1-A

    Abstract: TLM563D
    Text: Package Details TLM563D Case Mechanical Drawing Part Marking: 2-3 Character Alpha/Numeric Code Lead Code: Reference individual device data sheet. *Exposed pad P1 common to pin 6 *Exposed pad P2 common to pin 3 Mounting Pad Geometry Dimensions in mm R1 (4-March 2010)


    Original     		PDF TLM563D EIA-481-1-A 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 69x23x43 Standard EIA-481-1-A

    KSB1121

    Abstract: KSD1621
    Text: KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity • Fast Switching Speed • Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		PDF KSB1121 KSD1621 OT-89 KSB1121 KSD1621

    Untitled

    Abstract: No abstract text available
    Text: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		PDF KSA1201 -120V 120MHz KSC2881 OT-89 KSA1201

    SOT89 MARKING CODE B2

    Abstract: SOT89 MARKING CODE S3
    Text: KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		PDF KSD1621 KSD1621 KSB1121 OT-89 KSD1621RTF KSD1621STF KSD1621TTF KSD1621UTF SOT89 MARKING CODE B2 SOT89 MARKING CODE S3

    Untitled

    Abstract: No abstract text available
    Text: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings


    Original     		PDF KSB798 OT-89 KSB798

    A 798 transistor

    Abstract: SOT89 MARKING CODE B1 MARKING G3 Transistor 2W marking
    Text: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings


    Original     		PDF KSB798 KSB798 OT-89 KSB798GTF KSB798YTF A 798 transistor SOT89 MARKING CODE B1 MARKING G3 Transistor 2W marking

    Transistor 1308

    Abstract: FJC1308 FJC1963
    Text: FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		PDF FJC1308 FJC1963 OT-89 FJC1308 Transistor 1308 FJC1963

    transistor b1 y 016

    Abstract: KSB798
    Text: KSB798 PNP Epitaxial Silicon Transistor Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W Marking 7 9 P Y 8 W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings


    Original     		PDF KSB798 OT-89 KSB798 transistor b1 y 016

    KSB1121

    Abstract: KSD1621
    Text: KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		PDF KSD1621 KSB1121 OT-89 KSD1621 KSB1121

    FJC1308

    Abstract: FJC1963
    Text: FJC1963 NPN Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1308 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 1 9 6 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter


    Original     		PDF FJC1963 FJC1308 OT-89 FJC1963 FJC1308

    TRANSISTOR marking ar code

    Abstract: KSA1201 KSC2881
    Text: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code


    Original     		PDF KSA1201 -120V 120MHz KSC2881 OT-89 KSA1201 TRANSISTOR marking ar code KSC2881

    TLM833

    Abstract: marking 34 WT marking 024 marking code
    Text: Package Details TLM833 Case Mechanical Drawing Part Marking: 3-4 Character Alpha/Numeric Code Lead Code: Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R1 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details


    Original     		PDF TLM833 EIA-481-1-A marking 34 WT marking 024 marking code

    Untitled

    Abstract: No abstract text available
    Text: Package Details TLM832 Case Mechanical Drawing Part Marking: 2-3 Character Alpha/Numeric Code Lead Code: Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R1 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details


    Original     		PDF TLM832 EIA-481-1-A 21x9x9 27x9x17 23x23x13 23x23x23 53x23x23 69x23x43

    M3-12H

    Abstract: fujitsu gaas marking code fujitsu gaas mm catalog CAPACITOR JL 1500 SJPL 4012K 1994C
    Text: PACKAGE MARKING Fujitsu's optoelectronic device has the following marking attached to each package or package case. cP 1. Manufacturer's Name: F or FUJITSU 2. Part Number: See part numbering systems 3. Serial Number: Serial number consists of Date Code and Sequence Number.


    OCR Scan     		PDF

    marking YD

    Abstract: BF999
    Text: Silicon N-Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm tape BF 999 LB Q 62702-F38 Q62702-F1132 M axim um ratings Symbol


    OCR Scan     		PDF 62702-F38 Q62702-F1132 marking YD BF999