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    MARKING CODE 3C Search Results

    MARKING CODE 3C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE 3C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Part marking

    Abstract: No abstract text available
    Text: Surface Mount Rectifier Markings Cathode Band Device Marking not included on bidirectional TVS F1 V123 Rectron Logo (only on SMC) Factory Date Code Factory Date Code "XYZZ": "X" = Factory code, "Y" = Last digit of year，From 2010, the code should be 2010 : A/ 2011 : B/ 2012 : C., "ZZ" = MFG week


    Original     		PDF FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 FFM101 HFM101 Part marking

    HAL401

    Abstract: 401K SOT89B-1 HAL401SF-K Hall sensors code sf Hall sensors marking code D HAL40
    Text: DATA SHEET MICRONAS Edition Sept. 14, 2004 6251-470-2DS HAL401 Linear Hall Effect Sensor IC MICRONAS HAL401 DATA SHEET Contents Page Section Title 3 3 3 3 3 3 3 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. Introduction Features Marking Code Special Marking of Prototype Parts


    Original     		PDF 6251-470-2DS HAL401 HAL401 401K SOT89B-1 HAL401SF-K Hall sensors code sf Hall sensors marking code D HAL40

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


    Original     		PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    transistor Bc 540

    Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W


    Original     		PDF 0-02V 0-03W 3-02V 3-02W 3-03W 3-04W 3-05W 3-06W 4-02V 4-02W transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    HAL401

    Abstract: SMD Hall sensors SMD codes Hall sensors linear SMD Hall sensors linear HAL401SF-K J-STD-020A Hall sensors code sf hall sensors for magnetic measurements
    Text: DATA SHEET MICRONAS Edition June 26, 2002 6251-470-1DS HAL401 Linear Hall Effect Sensor IC MICRONAS HAL401 Freigabe-Exemplar DATA SHEET Contents Page Section Title 3 3 3 3 3 3 3 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. Introduction Features Marking Code Special Marking of Prototype Parts


    Original     		PDF 6251-470-1DS HAL401 HAL401 SMD Hall sensors SMD codes Hall sensors linear SMD Hall sensors linear HAL401SF-K J-STD-020A Hall sensors code sf hall sensors for magnetic measurements

    77V1254

    Abstract: IDT77V1254
    Text: IDT77V1254 HYLFH UUDWD D 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision of the 77V1254 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


    Original     		PDF 4521V77TDI 77V1254 77V1254 L25PG IDT77V1254

    Untitled

    Abstract: No abstract text available
    Text: ,'79 HYLFH UUDWD ' Notes Supplemental Infor Information mation The revision of the 77V1253 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1253 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


    Original     		PDF 77V1253 77V1253 L25PG

    77V1254L200

    Abstract: No abstract text available
    Text: 9/ 'HYLFH UUDWD 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. This errata does not apply to the 77V1254L200 device.


    Original     		PDF 77V1254L25 77V1254L200 77V1254 L25PG

    SUB610

    Abstract: No abstract text available
    Text: SUB610 Semiconductor Schottky Barrier Diode Features • • • • Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability Ordering Information Type No. Marking SUB610 61B Package Code SOT-363 Outline Dimensions


    Original     		PDF SUB610 OT-363 KSD-D5S004-000 SUB610

    C2373

    Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor
    Text: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code


    Original     		PDF Q62702-C2373 OT-363 May-12-1998 C2373 Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor

    5b1 transistor

    Abstract: transistor 5B1 H12E
    Text: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-363 Q62702-2373 Jan-20-1997 5b1 transistor transistor 5B1 H12E

    MMBT6428

    Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
    Text: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087


    Original     		PDF MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 MMBT5086 MMBT6428 mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088

    Untitled

    Abstract: No abstract text available
    Text: ERD03 3.0A (200V to 400V / 3.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø 7.5 ø 1.8 10 24 MIN. 24 MIN. Features Marking Compact size, light weight High reliability Color code : White Applications Voltage class ERD03 -02 Cathode mark General purpose rectifier applications


    Original     		PDF ERD03 ERD03 ig-04

    CM4532-L

    Abstract: CM4532-221-kl CM4532221KL CM4532-102KL CM4532101 eme 1100 eme 1200 cm45324 CM4532100KL CM4532R33ML
    Text: SPECIFICATION FOR APPROVAL 20100129-G REF : 20070124-C PROD. PAGE: 1 WOUND CHIP INDUCTOR NAME ABC'S DWG NO. CM4532□□□□L□-□□□ ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： 330K Marking Inductance code 4.2±0.2 A : 4.5±0.3 m/m B : 3.2±0.2


    Original     		PDF 20100129-G 20070124-C CM4532L- Temp250 40sec E59481 BM-21 BM-22 BM-23 EME-1100 CM4532-L CM4532-221-kl CM4532221KL CM4532-102KL CM4532101 eme 1100 eme 1200 cm45324 CM4532100KL CM4532R33ML

    eme 1200

    Abstract: polysol 155 0,16 CC4532-L cc4532331kl
    Text: SPECIFICATION FOR APPROVAL 20100129-G REF : 20071102-D PAGE: 1 PROD. NAME ABC'S DWG NO. WOUND CHIP INDUCTOR CC4532□□□□L□-□□□ ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & DIMENSIONS： 330K Marking Inductance code A : 4.5±0.3 m/m B : 3.2±0.2 m/m C


    Original     		PDF 20100129-G 20071102-D CC4532L- Temp250 40sec 150sedentification E59481 BM-21 BM-22 BM-23 eme 1200 polysol 155 0,16 CC4532-L cc4532331kl

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN

    sot-363 marking 3C

    Abstract: lf 10193
    Text: Sii 900_ Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id (A ) r DS(on) (f i ) 0.480 e V q s = 10 V 0.63 0.700 V q s = 4.5 V 0.52 30 SOT-363 SC-70 (6-LEADS) Marking Code Lot Traceability and Oate Code I—- Part # Code


    OCR Scan     		PDF OT-363 SC-70 S-02367-- 23-Oct-OO sot-363 marking 3C lf 10193

    sot-363 marking 3C

    Abstract: maxim MARKING CODE 21 71179
    Text: S ii 400_ Weiv Product Vishay Siliconix N-Channel 20-V D-S M OSFET PRODUCT SUMMARY r DS(on) (£2) b(A) 0.150 e V GS = 4.5 V 1.7 0.235 e V GS = 2.5 V 1.3 VDS(V) 20 SOT-363 SC-70 (6-LEADS) Marking Code XX £ Lot Traceability and Date Code — Part# Code


    OCR Scan     		PDF OT-363 SC-70 150cC S-00826-- 24-Apr-00 sot-363 marking 3C maxim MARKING CODE 21 71179

    Untitled

    Abstract: No abstract text available
    Text: PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general AF applications High collector current High current gain Complementary types: BCV 27, BCV 47 NPN Type S BCV 26 a BCV 46 Marking Ordering code for versions in bulk Ordering code for


    OCR Scan     		PDF Q62702-C1151 Q62702-C1153 Q62702-C1493 Q62702-C1475 BCV26 BCV46

    bf544

    Abstract: siemens fet to92 700M
    Text: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F1231 eht07043 eht07044 EHM07002 fl23SbDS 0Qbb777 bf544 siemens fet to92 700M

    transistor fn 155

    Abstract: No abstract text available
    Text: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; AE-fc, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lC/lB ——2 A/—0.1 A


    OCR Scan     		PDF 2SB1424 OT-89, SC-62) 2SB1424; 2SB1424 transistor fn 155

    Untitled

    Abstract: No abstract text available
    Text: T -3 1 -17 NPN Silicon RF Transistor 35E D • ' BF554 flS3b350 00Ib737 fl 1 S I P _ SIEMENS/ SPCLi SEMICONDS • General RF small-signal applications up to 300 MHz, amplifier, mixer and oscillator in circuits Type Marking Ordering code for versions In bulk


    OCR Scan     		PDF BF554 flS3b350 00Ib737 Q62702-F551 Q62702-F1042 fl23b es-10