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    MARKING CODE 351 DIODE Search Results

    MARKING CODE 351 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE 351 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HSMS-8205

    Abstract: 8205 sot143 code marking l30 HSMS8202 8205 datasheet HSMS-8101 HSMS-8202 HSMS-8207 SCHOTTKY DIODE SOT-143 marking 8205
    Text: Surface Mount Microwave Schottky Mixer Diodes Technical Data HSMS-8101 Single HSMS-8202 Pair HSMS-8205 Pair HSMS-8207 Quad Plastic SOT-23 Package Features • Optimized for use at 10-14␣ GHz • Low Capacitance • Low Conversion Loss Package Lead Code Identification


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    PDF HSMS-8101 HSMS-8202 HSMS-8205 HSMS-8207 OT-23 OT-143 OT-143) 8205 sot143 code marking l30 HSMS8202 8205 datasheet SCHOTTKY DIODE SOT-143 marking 8205

    DSA300I200NA

    Abstract: SOT227B IXYS DSA 300 SOT227B package DSA300I100NA DSA300I45NA DSa300i DSA300 Minibloc m4x8 din 934
    Text: DSA 300 I 100 NA tentative V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 100 V 300 A 0.79 V Part number DSA 300 I 100 NA 2 1 3 4 Backside: Isolated Features / Advantages: Applications: Package:


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    PDF OT-227B 60747and 20091002a DSA300I200NA SOT227B IXYS DSA 300 SOT227B package DSA300I100NA DSA300I45NA DSa300i DSA300 Minibloc m4x8 din 934

    diode SMD MARKING CODE K6

    Abstract: diode SMD MARKING CODE K6 06 smd diode code g6 NXP Marking H2 AN2632 smd code marking A6 diode SMD MARKING CODE K6 03 1A3 equivalent smd marking H6 NXP MARKING *H5
    Text: INTEGRATED CIRCUITS DATA SHEET 74LVC16244A; 74LVCH16244A 16-bit buffer/line driver; 5 V input/output tolerant; 3-state Product specification Supersedes data of 2003 Jan 30 2003 Dec 08 Philips Semiconductors Product specification 16-bit buffer/line driver; 5 V input/output


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    PDF 74LVC16244A; 74LVCH16244A 16-bit 20-Nov-2009 diode SMD MARKING CODE K6 diode SMD MARKING CODE K6 06 smd diode code g6 NXP Marking H2 AN2632 smd code marking A6 diode SMD MARKING CODE K6 03 1A3 equivalent smd marking H6 NXP MARKING *H5

    DH2x60-18A

    Abstract: DH2x61-18A diode MARKING CODE 18A Minibloc m4x8 M4x8 DH2X6
    Text: DH2x60-18A tentative V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs 1800 V 60 A tbd ns Part number DH2x60-18A Backside: Isolated Features / Advantages: Applications: Package:


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    PDF DH2x60-18A 60747and DH2x60-18A DH2x61-18A diode MARKING CODE 18A Minibloc m4x8 M4x8 DH2X6

    DHG100X1200NA

    Abstract: sot 227b diode fast din 7985 DHG10
    Text: DHG 100 X 1200 NA tentative V RRM = 1200 V I FAV = 2x 50 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 100 X 1200 NA Backside: Isolated Features / Advantages: Applications:


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    PDF 60747and DHG100X1200NA sot 227b diode fast din 7985 DHG10

    DMA150E1600NA

    Abstract: No abstract text available
    Text: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number 1 3 2 4 Backside: Isolated Features / Advantages: Package: Applications: Housing: SOT-227B minibloc rIndustry standard outline rCu base plate internal DCB isolated


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    PDF OT-227B 160LLIMETERS 60747and DMA150E1600NA

    DMA150E1600NA

    Abstract: DMA-150 DIN7985 din 7985
    Text: DMA 150 E 1600 NA tentative VRRM = I FAV = VF = Standard Rectifier Single Diode 1600 V 150 A 1.13 V Part number DMA 150 E 1600 NA 1 3 2 4 Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current


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    PDF OT-227B 60747and DMA150E1600NA DMA-150 DIN7985 din 7985

    DHG100X1200NA

    Abstract: SCREW din 7985
    Text: DHG 100 X 1200 NA advanced V RRM = 1200 V I FAV = 2x 50 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 100 X 1200 NA Backside: Isolated Features / Advantages: Applications:


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    PDF 60747and DHG100X1200NA SCREW din 7985

    DHG5

    Abstract: din 7985 DHG50X1200 DHG50X1200NA
    Text: DHG 50 X 1200 NA tentative V RRM = 1200 V I FAV = 2x 25 A t rr = 75 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 50 X 1200 NA Backside: Isolated Features / Advantages: Applications:


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    PDF 60747and DHG5 din 7985 DHG50X1200 DHG50X1200NA

    schottky diode SMB marking code 120

    Abstract: No abstract text available
    Text: MBRS3200T3 Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or


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    PDF MBRS3200T3 0E-04 0E-05 0E-06 0E-07 0E-08 0E-09 schottky diode SMB marking code 120

    chip Marking 3A3

    Abstract: No abstract text available
    Text: 74LVC16240A 16-bit buffer/line driver with 5 V tolerant inputs/outputs; inverting; 3-state Rev. 03 — 5 March 2004 Product data sheet 1. General description The 74LVC16240A is a high-performance, low power, low voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from


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    PDF 74LVC16240A 16-bit 74LVC16240A 22-Mar-2010 chip Marking 3A3

    Untitled

    Abstract: No abstract text available
    Text: DSEP2x25-12C V RRM = 1200 V I FAV = 2x 25 A t rr = 15 ns HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Parallel legs with series connected dice Part number DSEP2x25-12C Backside: isolated Features / Advantages:


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    PDF DSEP2x25-12C Free00 2x25-12C 60747and 20110201a

    ZB36 zener

    Abstract: ZB27 zb36 zb24 ZB30 zb43 ZB22 BL sma zener U1ZB11 U1ZB12
    Text: BL GALAXY ELECTRICAL ZENER DIODES U1ZB6.8 - - - U1ZB390 POWER DISSIPATION: 1.0 W FEATURES DO-214AC SMA Silicon planar power zener diodes For use in stabilizing and clipping curcuits with high power rating. Standard zener voltage tolerance is ±10%. Add suffix "A" for ±5% tolerance. Other zener voltage


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    PDF U1ZB390 DO-214AC DO-214AC MIL-STD-202, ZB36 zener ZB27 zb36 zb24 ZB30 zb43 ZB22 BL sma zener U1ZB11 U1ZB12

    smd marking 2y0

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS 74LVC16241A 16-bit buffer/line driver 3-State Product specification Supersedes data of 1995 Dec 26 IC24 Data Handbook Philips Semiconductors 1997 Jul 29 Philips Semiconductors Product specification 16-bit buffer/line driver (3-State)


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    PDF 74LVC16241A 16-bit 74LVC16241A smd marking 2y0

    z390

    Abstract: 1ZB200-Y 1ZB220-Y 1ZB200Y 1ZB10 1ZB11 1ZB12 1ZB13 1ZB15 1ZB16
    Text: 1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1.0W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200 µs Zener Voltage : VZ = 6.8 V ~ 390 V


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    PDF 1ZB390 z390 1ZB200-Y 1ZB220-Y 1ZB200Y 1ZB10 1ZB11 1ZB12 1ZB13 1ZB15 1ZB16

    1Z10

    Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
    Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs


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    PDF 1Z390 1Z30A 1Z390, DO-15 SC-39 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A

    Handbook IC24

    Abstract: SMD MARKING CODE 1D6
    Text: INTEGRATED CIRCUITS 74LVC16374A/74LVCH16374A 16-bit edge triggered D-type flip-flop with 5 Volt tolerant inputs/outputs 3-State Product specification Supersedes data of 1997 Aug 22 IC24 Data Handbook Philips Semiconductors 1998 Mar 17 Philips Semiconductors


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    PDF 74LVC16374A/74LVCH16374A 16-bit 74LVC16374A/ 74LVCH16374A 74LVC16374A/74LVCH16374A Handbook IC24 SMD MARKING CODE 1D6

    diode a57 schottky

    Abstract: No abstract text available
    Text: SIEMENS Silicon Schottky Diode BAT 17-07 • For mixer applications in the VHF/UHF range • For high-speed switching Type BAT 17-07 Pin Configuration Ordering Code tape and reel 1 Q62702-A918 C1 2 C2 3 4 A2 A1 Marking Package 57 SOT-143 Maximum Ratings


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    PDF Q62702-A918 OT-143 235b05 fl23SbOS ae3Sb05 diode a57 schottky

    HSMS-8205

    Abstract: MARKING- L31 SOT-23 marking l31 SOT 143 MARKING 2T marking 2r Schottky L30 SOT143
    Text: What HEWLETT* mLliM PA C K A R D Surface Mount Microwave Schottky Mixer Diodes Technical Data Features h s m s -s i o i sin gle HSMS-8202 Pair HSMS-8205 Pair HSMS-8207 Quad Plastic SOT-23 Package • Optimized for use at 10-14 GHz • Low Capacitance • Low Conversion Loss


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    PDF HSMS-8202 HSMS-8205 HSMS-8207 OT-23 OT-143 OT-23) OT-143) iT0T55 MARKING- L31 SOT-23 marking l31 SOT 143 MARKING 2T marking 2r Schottky L30 SOT143

    marking A7s

    Abstract: siemens em 350 99 DIODE marking 351
    Text: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) SOT-23 3 ¿— EH I IX ° P U 07005 Maximum Ratings per Diode


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    PDF Q68000-A549 OT-23 BAV99 M0076 marking A7s siemens em 350 99 DIODE marking 351

    bb206

    Abstract: No abstract text available
    Text: bbSBTBl Philips Semiconductors OOEbBTB TET M APX Preliminary specification BB133 VHF variable capacitance diode N AnER PHILIPS/DISCRETE bRE J> QUICK REFERENCE DATA DESCRIPTION The BB133 is a silicon, double-implanted variable capacitance diode in planar technology, intended for use in VHF


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    PDF BB133 BB133 OD323. MBC779 bb206

    marking code 359A

    Abstract: 356-AB 363ab 355AB 352AB 359a marking 352A 350AB
    Text: ^ ^ ZENER DIODES 5 W ATTS 10V THRU 75 V General Semiconductor s Industries, Inc. SURFACE MOUNT SMZG & SMZJ S eries DESCRIPTION FEATURES Zener Voltages 10V - 75V JEDEC Registered Package Outline for Surface Mounting Maximum Limits Guaranteed on Four Parameters


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    PDF DO200 marking code 359A 356-AB 363ab 355AB 352AB 359a marking 352A 350AB

    TA 8202 K

    Abstract: L30 SOT143 SOT-23 marking l31 8e8n
    Text: Wag H E W L E T T PACKARD m SEM Surface Mount Microwave Schottky Mixer Diodes Technical Data Features HSMS-8101 HSMS-8202 HSMS-8205 HSMS-8207 Plastic SOT-23 Package • Optimized for use at 10-14 GHz • Low Capacitance Single Pair Pair Quad Package Lead Code


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    PDF HSMS-8101 HSMS-8202 HSMS-8205 HSMS-8207 OT-23 OT-143 OT-23) OT-143) TA 8202 K L30 SOT143 SOT-23 marking l31 8e8n

    Untitled

    Abstract: No abstract text available
    Text: Centrali TM CMPDM7002A Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEM ICO NDUCTOR CMPDM7002A is special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel


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    PDF CMPDM7002A 2N7002 C702A CP324 20-February CMPDM7002A OT-23 OT-23