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    MARKING CODE 11 DFN Search Results

    MARKING CODE 11 DFN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK170V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.17 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK125V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 24 A, 0.125 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK210V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.21 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK099V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.099 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy

    MARKING CODE 11 DFN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE 2x

    Abstract: NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE
    Text: 83B BC846BMB SO T8 65 V, 100 mA NPN general-purpose transistor Rev. 1 — 15 May 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF BC846BMB DFN1006B-3 OT883B) AEC-Q101 TRANSISTOR SMD MARKING CODE 2x NXP SMD TRANSISTOR MARKING CODE TRANSISTOR SMD MARKING CODE 2x I TRANSISTOR SMD MARKING CODE t8 marking code BV SMD Transistor TRANSISTOR SMD MARKING CODE ce TRANSISTOR SMD MARKING CODE 41 BC846BMB transistor smd code marking 102 NXP SMD ic MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PMBT3906MB DFN1006B-3 OT883B) PMBT3904MB. AEC-Q101

    marking code a02 SMD Transistor

    Abstract: MARKING CODE SMD IC A08 A08 smd transistor
    Text: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PMBT3906MB DFN1006B-3 OT883B) PMBT3904MB. AEC-Q101 marking code a02 SMD Transistor MARKING CODE SMD IC A08 A08 smd transistor

    NXP SMD ic MARKING CODE

    Abstract: smd code marking ft sot23 marking 41 sot23 nxp
    Text: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF 2PA1774xMB DFN1006B-3 OT883B) 2PA1774QMB 2PA1774RMB 2PA1774SMB OT883B 2PC4617QMB NXP SMD ic MARKING CODE smd code marking ft sot23 marking 41 sot23 nxp

    Untitled

    Abstract: No abstract text available
    Text: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF 2PA1774xMB DFN1006B-3 OT883B) 2PA1774QMB OT883B 2PC4617QMB 2PA1774RMB 2PC4617RMB 2PA1774SMB

    DFN12

    Abstract: marking code G dfn12
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN12 3.0x1.35, 0.5P CASE 506AD−01 ISSUE J 12 1 SCALE 4:1 DATE 09 JUL 2008 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION b APPLIES TO PLATED


    Original     		PDF DFN12 506AD-01 506AD marking code G dfn12

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.


    Original     		PDF BC847QAS DFN1010B-6 OT1216) BC857QAS. BC847QAPN. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.


    Original     		PDF BC857QAS DFN1010B-6 OT1216) BC847QAS. BC847QAPN. AEC-Q101

    diode NXP marking code N1

    Abstract: SOD882D
    Text: 006 D-2 BB173LX DF N1 VHF variable capacitance diode Rev. 1 — 25 March 2013 Product data sheet 1. Product profile 1.1 General description The BB173LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.


    Original     		PDF BB173LX BB173LX OD882D DFN1006D-2) sym008 diode NXP marking code N1 SOD882D

    diode NXP marking code N1

    Abstract: No abstract text available
    Text: 006 D-2 BB174LX DF N1 VHF variable capacitance diode Rev. 1 — 26 March 2013 Product data sheet 1. Product profile 1.1 General description The BB174LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.


    Original     		PDF BB174LX BB174LX OD882D DFN1006D-2) sym008 diode NXP marking code N1

    Untitled

    Abstract: No abstract text available
    Text: 05333 SM5KW10A - SM5KW36A Only One Name Means ProTek’Tion 5000 watt TVS Component Description Coming Soon The SM5KWxxA Series are high-powered surface mount transient voltage suppression components designed to protect equipment and systems from the damaging effects of high voltage spikes. The DFN-2-5KW surface mount


    Original     		PDF SM5KW10A SM5KW36A

    Untitled

    Abstract: No abstract text available
    Text: 05332 SM3KW24A Only One Name Means ProTek’Tion 3000 watt TVS Component Description The SM3KW24A is high-powered surface mount transient voltage suppression component designed to protect equipment and systems from the damaging effects of high voltage spikes. The DFN-2-3KW surface mount package configuration provides a lower profile at a reduce cost.


    Original     		PDF SM3KW24A SM3KW24A

    SM5KW33A

    Abstract: No abstract text available
    Text: 05333 SM5KW10A - SM5KW36A Only One Name Means ProTek’Tion 5000 watt TVS Component Description The SM5KWxxA Series are high-powered surface mount transient voltage suppression components designed to protect equipment and systems from the damaging effects of high voltage spikes. The DFN-2-5KW surface mount


    Original     		PDF SM5KW10A SM5KW36A SM5KW33A

    Untitled

    Abstract: No abstract text available
    Text: 05332 SM3KW24A Only One Name Means ProTek’Tion 3000 watt TVS Component Description Coming Soon The SM3KW24A is high-powered surface mount transient voltage suppression component designed to protect equipment and systems from the damaging effects of high voltage spikes. The DFN-2-3KW surface mount package configuration provides a lower profile at a reduce cost.


    Original     		PDF SM3KW24A SM3KW24A

    PQMD12

    Abstract: No abstract text available
    Text: DF N1 10B -6 PQMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ 24 July 2013 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistors RET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PQMD12 DFN1010B-6 OT1216) AEC-Q101 PQMD12

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB360ENEA DFN1010D-3 OT1215) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: B3L30LP 3A SCHOTTKY BARRIER RECTIFIER Features Mechanical Data • Guard Ring Die Construction for Transient Protection • • Low Power Loss, High Efficiency • • Low Forward Voltage Drop • Case: U-DFN3030-8 Case Material: Molded Plastic, “Green” Molding Compound.


    Original     		PDF B3L30LP U-DFN3030-8 J-STD-020 DS30915

    PDTA123YMB

    Abstract: PDTC123YMB
    Text: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC123YMB DFN1006B-3 OT883B) PDTA123YMB. AEC-Q101 PDTA123YMB PDTC123YMB

    PDTC124

    Abstract: PDTC124XMB
    Text: 83B PDTA124XMB SO T8 PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA124XMB DFN1006B-3 OT883B) PDTC124XMB. AEC-Q101 PDTC124 PDTC124XMB

    PDTC124XMB

    Abstract: No abstract text available
    Text: 83B PDTA124XMB SO T8 PNP resistor-equipped transistor; R1 = 22 k , R2 = 47 k Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA124XMB DFN1006B-3 OT883B) PDTC124XMB. AEC-Q101 PDTC124XMB

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC847QAPN 45 V, 100 mA NPN/PNP general-purpose transistor 19 July 2013 Product data sheet 1. General description NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits


    Original     		PDF BC847QAPN DFN1010B-6 OT1216) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA115TMB SO T8 PNP resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA115TMB DFN1006B-3 OT883B) PDTC115TMB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA143TMB DFN1006B-3 OT883B) PDTC143TMB. AEC-Q101

    SMD TRANSISTOR MARKING 2X

    Abstract: PDTA143
    Text: 83B PDTC143TMB SO T8 NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC143TMB DFN1006B-3 OT883B) PDTA143TMB. AEC-Q101 SMD TRANSISTOR MARKING 2X PDTA143