MIP006
Abstract: No abstract text available
Text: MIP0060ME Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 7 Package SSOP016-P-0300 Marking MIP006 A．ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C NO. 1 Item VCC Voltage
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MIP0060ME
SSOP016-P-0300
MIP006
40companies
MIP01*
MIP02*
MIP00*
MIP55*
MIP816/826
MIP52*
MIP006
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MIP004
Abstract: No abstract text available
Text: MIP0040MS Type Silicon MOSFET type Integrated Circuit Application For Switching Power Supply Control Structure CMOS type Equivalent Circuit Figure 8 Out Line DIP7-A1 Marking MIP004 A. ABSOLUTE MAXIMUM RATINGS Ta= 25°C±3°C No. 1 Item Ratings Unit VIN –0.3 to 500
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MIP0040MS
MIP004
MIP01*
MIP02*
MIP00*
MIP55*
MIP816/826
MIP52*
MIP56*
MIP53*
MIP004
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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UTD484
UTD484
UTD484L-TN3-T
UTD484G-TN3-T
O-252
UTD484L-TN3-R
UTD484G-TN3-R
UTD484G-K08-3030-R
QW-R502-207
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takamisawa relay tv-3
Abstract: FTR-F4AK024T takamisawa relay vb 24 12VDC TV-3 takamisawa takamisawa 24vdc coil relay takamisawa relay 12VDC 4 pole takamisawa relay takamisawa relay 24VDC takamisawa 9vdc takamisawa relay 12VDC vb
Text: FUJITSU TAKAMISAWA COMPONENT CATALOG POWER RELAY 2 POLE 5A/TV-3 RATED COMPACT TYPE FTR-F4 SERIES • FEATURES ● ● ● ● ● ● Small high density type relay 288mm2 save 24% compared to VB UL/CSA TV-3 rating Insulation distance: minimum 6 mm between coil and
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288mm2
IEC65)
takamisawa relay tv-3
FTR-F4AK024T
takamisawa relay vb 24
12VDC TV-3 takamisawa
takamisawa 24vdc coil relay
takamisawa relay 12VDC 4 pole
takamisawa relay
takamisawa relay 24VDC
takamisawa 9vdc
takamisawa relay 12VDC vb
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MIP553
Abstract: MIP5530MD MIP553MD TO-220IPD7-A2 traffic light using 68K
Text: MIP5530MD Silicon MOS FET type integrated circuit • Features Package Possible to correspond to the output about 30 W by the world wide input. with heat sink Typical LED peak current : 1.5 A With built-in LED short-circuit protection function.
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MIP5530MD
O-220IPD7-A2
MIP553MD
MIP553
MIP5530MD
MIP553MD
TO-220IPD7-A2
traffic light using 68K
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icl 555
Abstract: MIP554 ICL300
Text: MIP5540MS Silicon MOS FET type integrated circuit • Features Package It corresponds to the output for 10 W. Typical LED peak current : 1.0 A On resistance can be decreased to 3.7 Ω by adjusting the breakdown voltage to 400 V. The stability operation that suppresses the flicker in the triac light dimmer is possible.
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MIP5540MS
O-220IPD7-A2
MIP554
MIP803/804
MIP52
MIP816/826
MIP55
MIP50
MIP51
icl 555
MIP554
ICL300
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MIP554
Abstract: ICL300 MIP5540MS icl 555
Text: MIP5540MS Silicon MOS FET type integrated circuit • Features Package It corresponds to the output for 10 W. Typical LED peak current : 1.0 A On resistance can be decreased to 3.7 Ω by adjusting the breakdown voltage to 400 V. The stability operation that suppresses the flicker in the triac light dimmer is possible.
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MIP5540MS
O-220IPD7-A2
MIP554
MIP00*
MIP55*
MIP816/826
MIP50*
MIP02*
MIP52*
MIP56*
MIP554
ICL300
MIP5540MS
icl 555
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MIP5530MD
Abstract: MIP553MD MIP53 MIP553 traffic light using 68K TO-220IPD7-A2 triac applications circuit diagram for dimmer lamp
Text: MIP5530MD Silicon MOS FET type integrated circuit • Features Package Possible to correspond to the output about 30 W by the world wide input. with heat sink Typical LED peak current : 1.5 A With built-in LED short-circuit protection function.
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MIP5530MD
O-220IPD7-A2
MIP553MD
voltageP01*
MIP00*
MIP55*
MIP816/826
MIP50*
MIP02*
MIP52*
MIP5530MD
MIP553MD
MIP53
MIP553
traffic light using 68K
TO-220IPD7-A2
triac applications circuit diagram for dimmer lamp
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t3d diode
Abstract: Diode T3D 64 T3D 65 diode T3D 64 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode diode t3d 663 t03 T3D 28 diode
Text: 711GöSb □Q4Db71 Ib ö • PHIN SbE D P H IL IP S INTERNATIONAL B YV28 SERIES SbE » EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching
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BYV28
BYV28-50
\15\10mm
t3d diode
Diode T3D 64
T3D 65 diode
T3D 64 diode
Diode T3D 03
T3D 89 DIODE
T3D 55 diode
diode t3d
663 t03
T3D 28 diode
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Mullard Mullard quick reference guide
Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Text: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)
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BZX91
1N825
1N827
1N829
1N914
1N916
1N4001G,
CV7367
1N4002G,
CV7756
Mullard Mullard quick reference guide
CV7476
CV7143
CV8805
BZV46
CV 7476 mullard
CV7099
CV7100 diode
mullard germanium
BYW 64 bridge rectifier
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2N1499A
Abstract: transistor SE 431 i071
Text: M l L-S-19500/170A EL 8 M av 1969 SU PER SED IN G Ml L-S-19500/170(SigC) 15 February 1961 S EM IC O N D U C T O R DEVICE,- TRANSISTO R. TYPE 2N1499A 1. PN P. G E R M A N IU M SCO PE 1.1 Scope.- This specification covers the détail requirements for gemcr.!*jinf P N P ;
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L-S-19500/170A
L-S-19500/170
2N1499A
5961-A244
2N1499A
transistor SE 431
i071
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY a /II^ C a r iflV I I o„T MT2LSYT3272T1/T2, MT4LSY6472T1/T2 32K, 64K x 72 SYNCHRONOUS SRAM MODULE SYNCHRONOUS 32K, 64K x 72 SRAM « n A * i +3-3V s u p p l y w it h c l o c k e d , r e g i s t e r e d INPUTS AND BURST COUNTER n* r > • ■■ r
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MT2LSYT3272T1/T2,
MT4LSY6472T1/T2
0G1GL33
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intel 80486 microprocessor pin diagram
Abstract: No abstract text available
Text: ADVANCE M IC R O N 32K MT58LC32K36B2 36 SYNCHRONOUS SRAM X 32K x 36 SRAM +3.3V SUPPLY W ITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES • • • • • • • • • • • • • • Fast access times: 9,10 ,1 2 a n d 17ns Fast OE: 5, 6 and 7ns
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MT58LC32K36B2
486/Pentium
100-lead
32-bit
64-bit
MT58LC32K36B2LG-9
MT581C32K36B2
intel 80486 microprocessor pin diagram
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M I I^ P O N 32K SYNCHRONOUS SRAM MT58LC32K36B2 36 SYNCBURST SRAM X 32K x 36 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 9,10,11,12 and 14ns
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MT58LC32K36B2
100-lead
MT58LC32K36B2LG-12
MT58LC32K36B2LG-9
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80486 microprocessor block diagram and pin diagrams
Abstract: 1S1665
Text: ADVANCE iu i|i“ n f n N K 1ll1— LTc MT58LC32K36M1 32K X 36 SYNCHRONOUS SRAM SYNCHRONOUS SRAM 32K x 36 SRAM +3.3V SUPPLY W ITH CLOCKED, REGISTERED INPUTS AND LINEAR BURST COUNTER FEATURES • • • • • • • • • • • • • • Fast access times: 9 ,1 0 ,1 2 and 17ns
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MT58LC32K36M1
100-lead
32-bit
680X0
MT58LC32K36M1LG-12
64-bit
80486 microprocessor block diagram and pin diagrams
1S1665
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ic 7476 pin diagram
Abstract: No abstract text available
Text: ADVANCE M I i r ^ P n N M T2LS Y T3264C 4 32K X 64 S Y N C H R O N O U S SRAM MODULE SYNCH RONOUS 32K x 64 SRAM Q R A M +3 3V s u p p ly , f u l l y r e g is t e r e d INPUTS, OUTPUTS AND BURST COUNTER ll/in n i II e O f t M l VI I V I U U U I - E Z FEATURES
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T3264C
SYT3264C4
ic 7476 pin diagram
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Untitled
Abstract: No abstract text available
Text: ADVANCED M IC R O N I MT58LC64K36B2 64Kx:36 SYNCBURST’* SRAM SYNCHRONOUS SRAM 64K x 36 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 9 ,1 0 ,1 1 ,1 2 and 14ns
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58LC64K
MT58LC64K36BZ
64K36B2
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 64K x 32 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • Fast access times: 4 .5 ,5 ,6 ,7 and 8ns Fast OE access times: 5 and 6ns Single +3.3V ±5% power supply
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MT58LC64K32C4
100-lead
den76)
160-PIN
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY |U l|r-c a rn |\J I — M T 2 L S Y T 3 2 7 2 T 4 /T 6 . M T 4 L S Y 6 4 7 2 T 4 /T 6 32K. 64K x 72 S Y N C H R O N O U S S R A M M O D U L E SYNCHRONOUS SRAM MODULE 3 2 K, 64K x 72 SRAM 256KB/512KB, 3.3V, PIPELIN ED S Y N C H R O N O U S BURST, S E C O N D A R Y CACHE
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160-lead,
MT2LSYT3272T4/T6.
MT4LSY6472T4fT6
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Untitled
Abstract: No abstract text available
Text: ADVANCE I 64K 'ECKNOlUüï, INC. SYNCHRONOUS SRAM X MT58LC64K32D7 32 SYNCBURST SRAM 64K x 32 SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • Fast access times: 4.5,5,6,7 and 8ns
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MT58LC64K32D7
160-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE |U |IC = R O N 128K X MT58LC128K32B2 32 SYNCBURST SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • Fast access times: 9,10,11,12 and 14ns Fast OE access times: 5 and 6ns Single +3.3V ±5% power supply SNOOZE MODE for reduced power standby
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MT58LC128K32B2
100-lead
160-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC32K32D7 32K X 32 SYNCBURST SRAM M IC R O N 32K x 32 SRAM +3.3V SUPPLY, PIPELINED, SINGLE CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View Fast access times: 4.5,5,6,7 and 8ns
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MT58LC32K32D7
100-lea1
160-PIN
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M T58LC 64K 32C 6 6 4 K X 32 S Y N C B U R S T SRAM I^ IC R D N 64K x 32 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access tim e: 7ns
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T58LC
100-lead5
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T58LC
Abstract: No abstract text available
Text: ADVANCE M T58LC 64K 32B 2 6 4 K X 32 S Y N C B U R S T SRAM M IC R O N 64K x 32 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • F ast access tim es: 9 ,1 0 ,1 1 , 12 an d 14ns Fast O E access tim es: 5 and 6ns
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T58LC
100-lead
128ns.
MT58LC64K32B2
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