Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel
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L2SC2412KXLT1G
L2SC2412KQLT1G
L2SC2412KQLT3G
L2SC2412KRLT1G
L2SC2412KRLT3G
L2SC2412KSLT1G
L2SC2412KSLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel
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L2SC2412KXLT1G
L2SC2412KQLT1G
L2SC2412KQLT3G
L2SC2412KRLT1G
L2SC2412KRLT3G
L2SC2412KSLT1G
L2SC2412KSLT3G
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marking BS sot23
Abstract: marking Bq sot23 2SC2412 Transistor marking BQ marking BQ sot-23 Marking br sot23 Transistor bs sot23 marking BS SOT-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SC2412 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES • Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SC2412
100MHz
marking BS sot23
marking Bq sot23
2SC2412
Transistor marking BQ
marking BQ sot-23
Marking br sot23 Transistor
bs sot23
marking BS SOT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SC2412 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES • Low Cob ,Cob = 2.0 pF (Typ). 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SC2412
100MHz
2SA2412
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marking BS SOT23
Abstract: marking Bq sot23 marking BQ sot-23 bq transistor sot23 transistor sot23 MARKING 560 Transistor marking BQ Marking br sot23 Transistor marking br sot23 marking BS SOT-23 transistor sot23 pf
Text: 2SC2412 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage
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OT-23
2SC2412
OT-23
100MHz
marking BS SOT23
marking Bq sot23
marking BQ sot-23
bq transistor sot23
transistor sot23 MARKING 560
Transistor marking BQ
Marking br sot23 Transistor
marking br sot23
marking BS SOT-23
transistor sot23 pf
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Untitled
Abstract: No abstract text available
Text: 2SC2412K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Low Cob ,Cob = 2.0 pF (Typ). Complements the 2SA1037AK 2.80 1.60 MARKING : BQ, BR, BS 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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2SC2412K
OT-23-3L
OT-23-3L
2SA1037AK
100MHz
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2SC2412K
Abstract: 2SA1037AK
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC2412K SOT-23-3L TRANSISTOR NPN FEATURES z Low Cob ,Cob = 2.0 pF (Typ). z Complements the 2SA1037AK 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23-3L
2SC2412K
OT-23-3L
2SA1037AK
100MHz
2SC2412K
2SA1037AK
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r31a
Abstract: No abstract text available
Text: REF3112 REF3120 REF3125 REF3130 REF3133 REF3140 SBVS046C – DECEMBER 2003 – REVISED FEBRUARY 2006 15ppm/°C Max, 100µA, SOT23-3 SERIES VOLTAGE REFERENCE FEATURES DESCRIPTION ● MicroSIZE PACKAGE: SOT23-3 The REF31xx is a family of precision, low power, low dropout,
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REF3112
REF3120
REF3125
REF3130
REF3133
REF3140
SBVS046C
15ppm/Â
OT23-3
r31a
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Untitled
Abstract: No abstract text available
Text: REF3212, REF3220 REF3225, REF3230 REF3233, REF3240 SBVS058C – JUNE 2005 – REVISED AUGUST 2011 www.ti.com 4ppm/°C, 100 A, SOT23-6 SERIES VOLTAGE REFERENCE Check for Samples: REF3212, REF3220, REF3225, REF3230, REF3233, REF3240 FEATURES DESCRIPTION •
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REF3212,
REF3220
REF3225,
REF3230
REF3233,
REF3240
SBVS058C
OT23-6
REF3220,
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smd transistor t6
Abstract: SMD TRANSISTOR MARKING BR BSS63R t6 marking sot23
Text: Transistors SMD Type High Voltage Transistor BSS63R SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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BSS63R
OT-23
-25mA,
-10mA
-25mA
35MHz
smd transistor t6
SMD TRANSISTOR MARKING BR
BSS63R
t6 marking sot23
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Untitled
Abstract: No abstract text available
Text: SMD Type SMD Type Product specification BSS63R SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter
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BSS63R
OT-23
-25mA,
-10mA
-25mA
35MHz
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Untitled
Abstract: No abstract text available
Text: TLV62565 TLV62566 www.ti.com SLVSCB7 – OCTOBER 2013 1.5-A High Efficiency Step-Down Converter in SOT23-5 Package Check for Samples: TLV62565, TLV62566 FEATURES DESCRIPTION • • • • • • • • • • • • • • • The TLV62565/6 devices are synchronous step-down
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TLV62565
TLV62566
OT23-5
TLV62565,
TLV62565/6
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FMMT417
Abstract: 417 TRANSISTOR SMD TRANSISTOR MARKING BR
Text: Transistors SMD Type Avalanche Transistor FMMT417 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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FMMT417
OT-23
620pF
20MHz
FMMT417
417 TRANSISTOR
SMD TRANSISTOR MARKING BR
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marking 415 sot23
Abstract: FMMT415
Text: Transistors SMD Type Avalanche Transistor FMMT415 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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FMMT415
OT-23
620pF
20MHz
marking 415 sot23
FMMT415
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FMMT491A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 SOT23 NPN Rsilicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low Equivalent Resistance, 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1
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FMMT491A
OT-23
500mA
100mA
100MHz
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marking C1
Abstract: TMPTA70 TMPT5401 h2t1
Text: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0
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OT-23/TO-236AB
BCW29
BCW30
BCW61A
BCW61B
BCW61C
BCW61D
BCW67A
BCW67B
BCW68F
marking C1
TMPTA70
TMPT5401
h2t1
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sot-23 marking 7z
Abstract: MARKING A8C SOT-23 7y sot23 MMBR941BLT1 SOT-23 A8A marking 7m marking 7Y SOt23 RF Transistors markING 7Z MMBR920LT1
Text: SOT-23 TRANSISTORS continued Plastic-Encapsulated Bias Resistor Transistors for General-Purpose Applications Pinout: 1-Base, 2-Emltter, 3-Collector hpE@ lc V (BR)CEO Marking Device NPN PNP NPN PNP Volts (Min) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1
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OT-23
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMBTA06LT1
sot-23 marking 7z
MARKING A8C SOT-23
7y sot23
MMBR941BLT1
SOT-23 A8A
marking 7m
marking 7Y SOt23
RF Transistors
markING 7Z
MMBR920LT1
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tn2460
Abstract: TN2460T
Text: HSffSi TN2460 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BR DSS TN2460L 240 TN2460T 240 "W1 >D (mA) PACKAGE 60 76 TO-92 60 51 SOT-23 Performance Curves: VNDN24 J¥ PRODUCT MARKING TN2460T TQ3 TO-92 (TO-226AA) BOTTOM VIEW
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TN2460
O-226AA)
TN2460L
TN2460T
OT-23
VNDN24
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Untitled
Abstract: No abstract text available
Text: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VN0605T
OT-23
VNDS06
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MLL34
Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L
Text: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max
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BC846AT
BC846BT
BC817-16L
BC817-25L
BC817-40L
BC847AT
BC847BT
BC847CT
BCX70KL
BCW72L
MLL34
m6 sot-23 pinout
sot-23 Marking KN
bk sot 23 marking
16 SOT-143 MOTOROLA
Cross Reference sot23
MMBT8599
motorola transistor dpak marking
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itt 2222a
Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
Text: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min
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PZT2222A
PZT2907A
PZTA14
BSP52
ZTA14
PZTA64
ZTA64
PTZA42
TZA42
itt 2222a
itt 2907A
motorola diode cross reference
PTZA92
2222a pinout
2907A
bs33
zta96
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MMBT3960
Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Text: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2
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OT-23
MMBT3960A
MMBT3960
MMBT6543
MMBTH10
MMBC1321Q2
MMBC1321Q3
MMBC1321Q4
MMBC1321Q5
MMBT918
MMBT4260
MMBT4261
3D MARKING SOT-23
sot-23 Marking 3D
3D marking sot23
MMBC1009F1
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150X1
Abstract: No abstract text available
Text: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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2N7002
OT-23
VNDS06
150X1,
150X1
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marking D76
Abstract: No abstract text available
Text: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D
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OT-23/TO-236AB
BAV74
marking D76
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