P6SBMJ24A
Abstract: B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Break Down Voltage VBR V @ IZT Test Current Min Nom Max Volts Volts Volts @IT Working Peak Reverse Voltage Maximum Reverse Leakage Current Maximum Reverse Current
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A40CA
5SCMJ120CA
5SCMJ130CA
5SCMJ150CA
5SCMJ160CA
5SCMJ170CA
5SCMJ180CA
5SCMJ200CA
P6SBMJ24A
B17C
B14A
A17a
B14A equivalent
MARKING A19c
marking A32A
P4SSMJ24A
A12A
a32a
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B14A equivalent
Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse
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11ACE
TVSP05PT
OT-23
LTVSJ12ESPT
LTVSJ15ESPT
SC-79
B14A equivalent
zener b14a
P6SBMJ24A
B17C
tvs2315pt
TVSS5VESPT
diode B14A
B14A zener equivalent
A17a
P4SSMJ24A
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sot-89 marking d9
Abstract: sot-89 marking E5 B7 SOT-89 transistor D9C transistor B9C t60 capacitor KIC3201S-14 SOT89 marking b5 sot89 E3 B9C transistor
Text: KIC3201S/T-12 ~ KIC3201S/T-60 SEMICONDUCTOR TECHNICAL DATA CMOS Linear Integrated Circuit Large Current Positive Voltage Regulator A C H G J B E The KIC3201S/T series are highly precise, low power consumption, positive voltage regulators manufactured using CMOS and laser trimming
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KIC3201S/T-12
KIC3201S/T-60
KIC3201S/T
400mA
150mV
100mA,
300mV
200mA
KIC3201S/T-18
sot-89 marking d9
sot-89 marking E5
B7 SOT-89
transistor D9C
transistor B9C
t60 capacitor
KIC3201S-14
SOT89 marking b5
sot89 E3
B9C transistor
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sot-89 marking d9
Abstract: sot-89 marking E5 transistor B9C KIC3201T marking b4c KIC3201 A7 SOT-89 A5 SOT-89 marking a4 sot-89 KIC3201S-12
Text: KIC3201S/T-12 ~ KIC3201S/T-60 SEMICONDUCTOR TECHNICAL DATA CMOS Linear Integrated Circuit Large Current Positive Voltage Regulator A C H G J B E The KIC3201S/T series are highly precise, low power consumption, positive voltage regulators manufactured using CMOS and laser trimming
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KIC3201S/T-12
KIC3201S/T-60
KIC3201S/T
400mA
150mV
100mA,
300mV
200mA
200mA)
sot-89 marking d9
sot-89 marking E5
transistor B9C
KIC3201T
marking b4c
KIC3201
A7 SOT-89
A5 SOT-89
marking a4 sot-89
KIC3201S-12
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KIC3201T-31
Abstract: No abstract text available
Text: KIC3201S/T-12 ~ KIC3201S/T-60 SEMICONDUCTOR TECHNICAL DATA CMOS Linear Integrated Circuit Large Current Positive Voltage Regulator A C H G J B E The KIC3201S/T series are highly precise, low power consumption, positive voltage regulators manufactured using CMOS and laser trimming
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KIC3201S/T-12
KIC3201S/T-60
KIC3201S/T
400mA
150mV
100mA,
300mV
200mA
200mA)
KIC3201T-31
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Untitled
Abstract: No abstract text available
Text: KIC3201S/T-12 ~ KIC3201S/T-60 SEMICONDUCTOR TECHNICAL DATA CMOS Linear Integrated Circuit Large Current Positive Voltage Regulator A C H G J B E The KIC3201S/T series are highly precise, low power consumption, positive voltage regulators manufactured using CMOS and laser trimming
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KIC3201S/T-12
KIC3201S/T-60
KIC3201S/T
400mA
150mV
100mA,
300mV
200mA
200mA
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B9D TRANSISTOR
Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C marking b9d sot-23 Marking B9C MARKING B9E HMBT8550 MARKING B9C HMBT8050
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. Features SOT-23 • High DC Current: hFE=150-400 at IC=150mA
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HE6813
HMBT8550
HMBT8550
OT-23
150mA
HMBT8050
B9D TRANSISTOR
PNP Transistor b9d
SOT-23 marking B9D
transistor B9C
marking b9d
sot-23 Marking B9C
MARKING B9E
MARKING B9C
HMBT8050
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B9D TRANSISTOR
Abstract: PNP Transistor b9d SOT-23 marking B9D transistor B9C HMBT8050 HMBT8550 B9C MARK B9C transistor sot-23 Marking B9C
Text: HI-SINCERITY Spec. No. : HE6813 Issued Date : 1997.08.11 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8550 PNP EPITAXIAL TRANSISTOR Description The HMBT8550 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current: hFE=150-400 at IC=150mA
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HE6813
HMBT8550
HMBT8550
OT-23
150mA
HMBT8050
183oC
217oC
260oC
B9D TRANSISTOR
PNP Transistor b9d
SOT-23 marking B9D
transistor B9C
HMBT8050
B9C MARK
B9C transistor
sot-23 Marking B9C
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Untitled
Abstract: No abstract text available
Text: 3C=*'-? $=@6"$'F ':.99'64;.9 >.;?6?@<> %><1A0@'A:.>E 7NJ\]ZN[ ;J TH5@) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A9BGAC89 T'C;=7@9I9@ 0E5G98 +( L ) >J 0 -/ ] ) >J 0 1+ $; *&+ 7 TI5@5B7<9E5G98 +" /.*+ T,H5@=:=98577CE8=B;GC ,
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5B79A9BGà
E5G98
E5G98
577CE8
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Untitled
Abstract: No abstract text available
Text: 3C= +? @Y\R>@Cb ':.99'64;.9(>.;?6?@<> %><1A0@'A:.>E 7NJ\]ZN[ ) ;J TH5@) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A9BGAC89 T.HD9E'C;=7@9I9@ 0E5G98 *( L ) >J 0 ),( ] ) >J 0 *-( $; )&- 7 TI5@5B7<9E5G98 T,H5@=:=98577CE8=B;GC ,
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E5G98
5B79A9BGà
E5G98
577CE8
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55b7
Abstract: C89T marking BM marking A9
Text: 3B=* ,@ # <?5" # & E $ & 9 -88& 53: -8 '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ ;J T H5@ + 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 %+( L ) >J 0 )-( ]" ) >J 0 */( $; T ' C;=7 @9I9@ 0 E5G98 %)&- 7 T I5@5B7<9 E5G98 G>%KJFG%. T , H5@=:=98 577CE8=B; GC
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5B79A
577CE
55b7
C89T
marking BM
marking A9
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Untitled
Abstract: No abstract text available
Text: 3C= '.? @Y\R>@Cb ':.99'64;.9 >.;?6?@<> %><1A0@'A:.>E 7NJ\]ZN[ ) ;J TH5@) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A9BGAC89 T.HD9E'C;=7@9I9@ 0E5G98 *( L ) >J 0 /( ] ) >J 0 )( $; *&) 7 TI5@5B7<9E5G98 T,H5@=:=98577CE8=B;GC ,
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E5G98
5B79A9BGà
E5G98
577CE8
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Untitled
Abstract: No abstract text available
Text: 3C= ',? @Y\R>@Cc ':.99'64;.9 >.;?6?@<> %><1A0@'A:.>E 7NJ\]ZN[ ) ;J TH5@) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A9BGAC89 T.HD9E'C;=7@9I9@ 0E5G98 *( L ) >J 0 -( ] ) >J 0 0- $; *&- 7 TI5@5B7<9E5G98 T,H5@=:=98577CE8=B;GC ,
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5B79A9BGà
E5G98
E5G98
577CE8
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55b7
Abstract: LG 7CA cxa75
Text: 3C= '.? @Y\R>@Cb ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;J T H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 @9I9@ 0 E5G98 *( L ) >J 0 /( ]" ) >J 0 )( $; *&) 7 T I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC
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5B79A
577CE
55b7
LG 7CA
cxa75
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LG 7CA
Abstract: 8CJB cxa75 marking 7CA
Text: 3C= ',? @Y\R>@Cc ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;J T H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 @9I9@ 0 E5G98 *( L ) >J 0 -( ]" ) >J 0 0- $; *&- 7 T I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC
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5B79A
577CE
LG 7CA
8CJB
cxa75
marking 7CA
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marking 7ca
Abstract: 55b7 57gi C89T
Text: 3C=*'-? $ =@6" $ ' F ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J T H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T ' C;=7 @9I9@ 0 E5G98 +( L ) >J 0 -/ ]" ) >J 0 1+ $; *&+ 7 T I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC + " /. * +
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5B79A
577CE
marking 7ca
55b7
57gi
C89T
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89EB
Abstract: No abstract text available
Text: 3C= +? @Y\R>@Cb ' : .99' 64;.9(>.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;J T H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 @9I9@ 0 E5G98 *( L ) >J 0 ),( ]" ) >J 0 *-( $; )&- 7 T I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC
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5B79A
577CE
89EB
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Untitled
Abstract: No abstract text available
Text: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mΩ VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant
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BSZ0907ND
IEC61249-2-21
0907ND
B6D398
89456789ABC586
864C234C
3F4564%
3FC586
3BF34
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant
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BSZ0908ND
IEC61249-2-21
0908ND
B6D398
89456789ABC586
864C234C
3F4564%
3FC586
3BF34
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Untitled
Abstract: No abstract text available
Text: INA149 www.ti.com SBOS579B – SEPTEMBER 2011 – REVISED JULY 2012 High Common-Mode Voltage Difference Amplifier FEATURES DESCRIPTION • • • The INA149 is a precision unity-gain difference amplifier with a very high input common-mode voltage range. It is a single, monolithic device that
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INA149
SBOS579B
INA149
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1B47
Abstract: 1B45 1B5 zener diode
Text: 123456789AB8CDEF E 6 8B8 66 3971BCB1D4B5E F34D 12345678 BC6DE6789A 1223456789A 3299AB78 F389A 1223456789A 1234567 89ABCD576EE Document No. : SSC- QP- 7- 07- 24 123456789AB8CDEF E 6 8B8 66 F E4 2AB9B 74 8C25B
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123456789AB8CDEF
3971BCB1D4B5E
BC6DE6789A
223456789A
3299AB78
89ABCD576EE
1B47
1B45
1B5 zener diode
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A13H
Abstract: DS41440 B13H a9ah A97h PIC16F1829LIN D98h pic16f1829 SAE J2602 transceiver IR 412H
Text: PIC16F1829LIN 20-Pin, 8-bit Flash LIN/J2602 Microcontroller Cross-Referenced Material: Special Microcontroller Features: This data sheet refers heavily on the following Microchip data sheets: • Self-Programmable under Software Control • Power-on Reset POR , Power-up Timer (PWRT)
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PIC16F1829LIN
20-Pin,
LIN/J2602
PIC16
F1825/1829
DS41440)
MCP2021A/2A,
DS22298)
DS41673A-page
A13H
DS41440
B13H
a9ah
A97h
PIC16F1829LIN
D98h
pic16f1829
SAE J2602 transceiver
IR 412H
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saa 1094
Abstract: marking 47 gain block sot-363 INA-S1063 part marking ab sc-70 04b6
Text: ASSI PHAECWKLAERTDT 9 n a 2.4 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-S1063 Features • Ultra-Miniature Package Surface Mount SOT-363 SC-70 Package • Internally Biased, Single 5 V Supply (1 2 mA) • 2 0 .5 dB Gain • SdBNF • Unconditionally Stable
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INA-S1063
OT-363
SC-70)
INA-51063
OT-363
OT-143
OT-363/SC-70)
Dj004)
saa 1094
marking 47 gain block sot-363
INA-S1063
part marking ab sc-70
04b6
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Untitled
Abstract: No abstract text available
Text: LSI LOGIC L64014 PCMCIA Bridge Advance Datasheet The L64014 PCMCIA Bridge chip is a companion chip of LSI Logic’s L64020 Digital Video Decoder DVD . The L64014 serves as an interface between a notebook computer with a Zoomed Video Port and the decompressed video and audio bitstream output from a DVD Decoder.
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L64014
L64020
JZO1-Q0O37B-Oa
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