B2510
Abstract: KB2510 K B2510 B-2510 KTB2510 3p transistor kec marking N
Text: SEMICONDUCTOR KTB2510 MARKING SPECIFICATION TO-3P N PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K B2510 816 No. Item Marking 1 KEC K KEC CORP. 2 Device Name B2510 KTB2510 3 hFE Grade 4 Lot No. 98.06.23 Revision No : Description 8 Year
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KTB2510
B2510
B2510
KB2510
K B2510
B-2510
KTB2510
3p transistor
kec marking N
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Z4W27V
Abstract: DO-218 B25R do218 month marking
Text: SEMICONDUCTOR Z4W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B25R 0D24 No. Item 1 Description Bar N(-) Type B25R B : Voltage Classification Lot No. 2008. 7. 2 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z4W27V
DO-218
Z4W27V
B25R
do218
month marking
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Q62702-B194
Abstract: Q62702-B257
Text: Silicon Tuning Varactors BBY 34 C BBY 34 D ● Hyperabrupt junction tuning diode ● Frequency linear tuning range 4 … 12 V ● High figure of merit Type Marking Ordering Code BBY 34 C – Q62702-B257 BBY 34 D Pin Configuration Package1 D Q62702-B194 Maximum Ratings
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Q62702-B257
Q62702-B194
Q62702-B194
Q62702-B257
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Wire AWG20 UL Red
Abstract: No abstract text available
Text: IP series Pushbutton switches for harsh environments - bushing Ø 12 mm - momentary Distinctive features and specifications UG1006-A ❑ Illuminated or non-illuminated ❑ Tactile feedback ❑ Wide variety of configurations ❑ Flat round actuator for optional marking
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UG1006-A
IP69K
U5125
10-500Hz
472DIA)
688DIA)
Wire AWG20 UL Red
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MIAA10WD600TMH
Abstract: E72873
Text: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA10WD600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = 35 A IC25 IFSM VCE sat = 2.1 V = 270 A = 18 A Part name (Marking on product) MIAA10WD600TMH
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MIAA10WD600TMH
IDAVM25=
po300V
/-15V
MIAA10WD600TMH
E72873
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E72873
Abstract: MIAA10WF600TMH
Text: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA10WF600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM 90 A = 270 A = 18 A VCE sat = 2.1 V Part name (Marking on product) MIAA10WF600TMH
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MIAA10WF600TMH
IDAVM25=
vol300V
/-15V
E72873
MIAA10WF600TMH
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E72873
Abstract: MIAA20WD600TMH marking code 68W 75 marking code 68W 70 marking code 68W
Text: Advanced Technical Information Converter - Inverter Module NPT IGBT MIAA20WD600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM 65 A = 550 A = 29 A VCE sat = 2.1 V Part name (Marking on product) MIAA20WD600TMH
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MIAA20WD600TMH
IDAVM25=
20070531a
/-15V
E72873
MIAA20WD600TMH
marking code 68W 75
marking code 68W 70
marking code 68W
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Untitled
Abstract: No abstract text available
Text: MIAA20WD600TMH Advanced Technical Information Converter - Inverter Module NPT IGBT Single Phase Rectifier Three Phase Inverter VRRM = 600 V VCES = 600 V IDAVM25 = IC25 IFSM 65 A = 550 A = 29 A VCE sat = 2. V Part name (Marking on product) MIAA20WD600TMH
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MIAA20WD600TMH
IDAVM25
20070531a
/-15V
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Untitled
Abstract: No abstract text available
Text: MIXA40W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 60 A VCE sat = 1.8 V Part name (Marking on product) MIXA40W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA40W1200TMH
20101117c
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Untitled
Abstract: No abstract text available
Text: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA30W1200TMH
20101102b
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA15WD600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM 35 A = 270 A = 23 A VCE sat = 2.1 V Part name (Marking on product) MIAA15WD600TMH
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MIAA15WD600TMH
IDAVM25
/-15V
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MIAA10WD600TMH
Abstract: Fast Recovery Rectifier, 300V ac motor 150w E72873 22 KW motor FREE ENERGY DIAGRAM
Text: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA10WD600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = 35 A IC25 IFSM VCE sat = 2.1 V = 270 A = 18 A Part name (Marking on product) MIAA10WD600TMH
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MIAA10WD600TMH
IDAVM25=
po00V
/-15V
20070404a
MIAA10WD600TMH
Fast Recovery Rectifier, 300V
ac motor 150w
E72873
22 KW motor
FREE ENERGY DIAGRAM
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MIAA10WF600TMH
Abstract: E72873
Text: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA10WF600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM 90 A = 270 A = 18 A VCE sat = 2.1 V Part name (Marking on product) MIAA10WF600TMH
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MIAA10WF600TMH
IDAVM25=
vol00V
/-15V
20070404a
MIAA10WF600TMH
E72873
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Untitled
Abstract: No abstract text available
Text: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required
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MIXA30W1200TMH
20101102b
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MKK400-D-50-21
Abstract: A3996 B25669A3996J375
Text: PhaseCap HD B25669-A3996-J375 MKK400-D-50-21 4RB5 500-5 AB 40 Characteristics CN UN fN QN IN ∆ tan δ 0 3x 332 AC 400 50 50 3x 72 µF ±5 % V Hz kvar A Marking 60 Hz * 60 kvar *) 86 A *) 0,2 W/kvar dielectric) *) Temperature class deviation -40/B max. 45°C
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B25669-A3996-J375
MKK400-D-50-21
-40/B
6797-J13
439-BM12
MKK400-D-50-21
A3996
B25669A3996J375
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MKK440-D-50-21
Abstract: hex bolt DT-38 60kvar B25669A4827J375
Text: PhaseCap HD B25669-A4827-J375 MKK440-D-50-21 4RB5 500-5 AB 45 Characteristics CN UN fN QN IN ∆ tan δ 0 3x 274 AC 440 50 50 3x 66 µF ±5 % V Hz kvar A Marking 60 Hz * 60 kvar *) 79 A *) 0,2 W/kvar dielectric) *) Temperature class deviation -40/B max. 45°C
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B25669-A4827-J375
MKK440-D-50-21
-40/B
6797-J13
439-BM12
MKK440-D-50-21
hex bolt
DT-38
60kvar
B25669A4827J375
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MKK400-D-25-01
Abstract: B25667A4197A375 siemens 230 96 B25667-A4467-A3 MKK400-D-12 3x82 A2757 A4247 MKK415-D-20 MKK480-D-20-01
Text: Siemens Matsushita Components Phase Cap MKK-Capacitor B25667-A2157-A175 MKK230-I-2,5-01 Characteristics CN QN UN fN IN tanδ 0 Marking 1x150 µF +10/-5% 2.5 kvar AC 230 V 50 Hz 10.8 A 2 ⋅ 10-4 Maximum ratings Umax Imax îs du/dt max (du/dt)s 1.1 ⋅ UN (8 hours daily)
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B25667-A2157-A175
MKK230-I-2
1x150
-25/D
MKK400-D-25-01
B25667A4197A375
siemens 230 96
B25667-A4467-A3
MKK400-D-12
3x82
A2757
A4247
MKK415-D-20
MKK480-D-20-01
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MKK-440-D-25-01
Abstract: No abstract text available
Text: PhaseCap B25667-A4417-A375 MKK440-D-25-01 4RB5 250-5 AB 45 Characteristics CN UN fN QN IN ∆ 3x 137,1 AC 440 50 25 3x 32,8 tan δ 0 µF ±5 % V Hz kvar A Marking 60 Hz * 30 kvar *) 39 A *) 0,2 W/kvar dielectric) *) Temperature class deviation -40/B max. 45°C
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B25667-A4417-A375
MKK440-D-25-01
-40/B
6797-J13
439-BM12
C61014-A0508-A401
-40/D
MKK-440-D-25-01
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MKK230-D-12
Abstract: No abstract text available
Text: PhaseCap B25667-A2757-A375 MKK230-D-12,5-01 4RB5 125-5 AB 23 Characteristics CN UN fN QN IN ∆ 3x 250,8 AC 230 50 12,5 3x 31 tan δ 0 µF ±5 % V Hz kvar A Marking 60 Hz * 15 kvar *) 37 A *) 0,2 W/kvar dielectric) *) Temperature class deviation -40/B max. 45°C
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B25667-A2757-A375
MKK230-D-12
-40/B
6797-J13
439-BM12
C61014-A0506-A420
-40/D
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Untitled
Abstract: No abstract text available
Text: WindCap B25668-A7376-A3*5 MKK800-D-7,5-11 * preliminary data sheet Characteristics CN UN fN QN IN ∆ tan δ 0 3x 12,4 AC 800 50 7,5 3x 5,4 Marking µF ±5 % V Hz 60 Hz kvar 9 kvar A 6,48 A 0,2 W/kvar dielectric Maximum ratings Mentioned data are considered to be preliminary. Electrical, mechanical
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B25668-A7376-A3
MKK800-D-7
6797-J13
-40/D
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B25667A6507A375
Abstract: MKK690-Y MKK690-Y-25-01
Text: PhaseCap B25667-A6507-A375 MKK690-Y-25-01 4RB5 250-5 AD 68 Characteristics CN UN fN QN IN Y 3x 167,2 AC 690 50 25 3x 21 tan δ 0 µF ±5 % V Hz kvar A Marking 60 Hz * 30 kvar *) 25 A *) 0,2 W/kvar dielectric) *) Temperature class deviation -40/B max. 45°C
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B25667-A6507-A375
MKK690-Y-25-01
-40/B
6797-J13
439-BM12
C61014-A0508-A401
-40/D
B25667A6507A375
MKK690-Y
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DIN 439-BM12
Abstract: AC-800 din 439 TT 46 N 800 a864
Text: WindCap B25668-A7496-A3*5 MKK800-D-10-11 * preliminary data sheet Characteristics CN UN fN QN IN ∆ tan δ 0 3x 16,6 AC 800 50 10 3x 7,2 Marking µF ±5 % V Hz 60 Hz kvar 12 kvar A 8,64 A 0,2 W/kvar dielectric Maximum ratings Mentioned data are considered to be preliminary. Electrical, mechanical
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B25668-A7496-A3
MKK800-D-10-11
DIN 439-BM12
AC-800
din 439
TT 46 N 800
a864
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Silicon Tuning Varactors BBY 34 C BBY 34 D • Hyperabrupt junction tuning diode • Frequency linear tuning range 4 . 12 V • High figure of merit Type Marking Ordering Code BBY 34 C - Q62702-B257 BBY 34 D Pin Configuration Package1’ D ° Q62702-B194
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Q62702-B257
Q62702-B194
a235bD5
B235bOS
Qbb72
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BFG92AW
Abstract: transistor marking P8
Text: Product specification Philips Semiconductors BFG92AW BFG92AW/X; BFG92AW/XR NPN 6 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW P8 • Gold metallization ensures excellent reliability. BFG92AW/X P9 BFG92AW/XR
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BFG92AW
BFG92AW/X;
BFG92AW/XR
OT343
OT343R
BFG92AW/X
BFG92AW/XR
BFG92AW
BFG92AW/X
transistor marking P8
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