702E
Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
Text: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT
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2N7002E
OT-323
SRT84W
2N7002S
OT-363
SRT84S
2N7002
OT-23
702E
MARKING 5F SOT363
MOSFET N SOT-23
MOSFET SOT-23
2N7002 SOT-23
transistor 702E
sot-23 marking E
sot-23 marking 113
MARKING ZT SOT23
MARKING ZT
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5967-5769E
Abstract: class D power amplifier 6.78 MHz a006 INA-32063 INA-32063-BLK NF50 marking 320 SOT-363
Text: 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications Pin Connections and Package Marking
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INA-32063
OT-363
SC-70)
INA-32063
5965-8921E
5967-5769E
5967-5769E
class D power amplifier 6.78 MHz
a006
INA-32063-BLK
NF50
marking 320 SOT-363
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ina 333 amplifier
Abstract: a006 INA-32063 INA-32063-BLK NF50 AN-A006
Text: 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications Pin Connections and Package Marking
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INA-32063
OT-363
SC-70)
INA-32063
5967-5769E
ina 333 amplifier
a006
INA-32063-BLK
NF50
AN-A006
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Untitled
Abstract: No abstract text available
Text: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB
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MGA-85563
OT-363
SC-70)
MGA-85563
OT-363
OT-143
sin017)
MGA-85563-TR1
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marking code ga sot 363
Abstract: rfics marking 5 rfics marking 76 MGA-85563 MGA-85563-BLK MGA-85563-TR1 NF50 marking 34 sot-363 rf sot143 TOP marking mga 017
Text: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB
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MGA-85563
OT-363
SC-70)
MGA-85563
5966-4894E
5968-6303E
marking code ga sot 363
rfics marking 5
rfics marking 76
MGA-85563-BLK
MGA-85563-TR1
NF50
marking 34 sot-363 rf
sot143 TOP marking
mga 017
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Low Noise Gaas
Abstract: No abstract text available
Text: 3-volt, Low Noise Amplifier for 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB
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MGA-85563
OT-363
SC-70)
MGA-85563
OT-363
OT-143
5966-4894E
5968-6303E
Low Noise Gaas
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Untitled
Abstract: No abstract text available
Text: 3-volt, Low Noise Amplifier for␣ 0.8 – 6 GHz Applications Technical Data MGA-85563 Features • 1.6 dB minimum Noise Figure at 1.9 GHz Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The MGA-85563 features a minimum noise figure of 1.6 dB
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MGA-85563
OT-363
SC-70)
MGA-85563
MGA-85563-TR1
MGA-85563-BLK
5966-3109E
5966-4894E
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Untitled
Abstract: No abstract text available
Text: BFS17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
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BFS17S
Abstract: VPS05604 NPN marking MCs
Text: BFS17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
Aug-20-2001
BFS17S
VPS05604
NPN marking MCs
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DIN 6784 c1
Abstract: BCR108S BFS17S E6327 VPS05604
Text: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
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BFS17S
VPS05604
EHA07196
OT363
DIN 6784 c1
BCR108S
BFS17S
E6327
VPS05604
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6c2 transistor
Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor
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OT-363
Q62702-F1645
Dec-18-1996
6c2 transistor
transistor marking MCs
Q62702-F1645
transistor BFs 18
SOT 23 CODE MCS
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VPS05604
Abstract: bfs 11
Text: BFS 17S NPN Silicon RF Transistor 4 For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363
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VPS05604
EHA07196
OT-363
Oct-25-1999
VPS05604
bfs 11
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A1s sot23
Abstract: BAW56S E6327 MARKING CODE A1s
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323
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BAW56.
BAW56
BAW56T
BAW56W
BAW56S
BAW56U
BAW56U
A1s sot23
BAW56S E6327
MARKING CODE A1s
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching
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2N7002DWA
OT363
170mA
200mA
AEC-Q101
DS36120
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V SOT363 • • • • • • • • • • ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the
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2N7002DWA
OT363
170mA
200mA
AEC-Q101
DS36120
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Untitled
Abstract: No abstract text available
Text: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching
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2N7002DWA
OT363
AEC-Q101
DS36120
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transistor smd yw
Abstract: BAP70AM array marking 20 NXP
Text: BAP70AM Silicon PIN diode array Rev. 01 — 20 November 2006 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features • ■ ■ ■ High voltage current controlled RF resistor for RF attenuators
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BAP70AM
OT363
BAP70AM
transistor smd yw
array marking 20 NXP
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Untitled
Abstract: No abstract text available
Text: D5V0F4U6S 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data • IEC 61000-4-2 ESD : Air ±15kV, Contact ±8kV 4 Channels of ESD Protection Low Channel Input Capacitance of 0.5pF Typical Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL
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OT363
IEEE1394,
J-STD-020
DS35495
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data sheet for all smd components
Abstract: BAP70AM
Text: BAP70AM Silicon PIN diode array Rev. 2 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits High voltage current controlled RF resistor for RF attenuators
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BAP70AM
OT363
data sheet for all smd components
BAP70AM
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Untitled
Abstract: No abstract text available
Text: BAP70AM Silicon PIN diode array Rev. 2 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits ̈ ̈ ̈ ̈ High voltage current controlled RF resistor for RF attenuators
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BAP70AM
OT363
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SMD 6 PIN IC MARKING CODE z1
Abstract: TRANSISTOR SMD MARKING CODES TRANSISTOR SMD CODE PACKAGE SOT363 Transistor SMD marking code NV
Text: PUMX2 NPN/NPN general-purpose double transistors Rev. 01 — 10 November 2005 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose double transistors in a small SOT363 SC-88 Surface Mounted Device (SMD) plastic package. 1.2 Features
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OT363
SC-88)
SMD 6 PIN IC MARKING CODE z1
TRANSISTOR SMD MARKING CODES
TRANSISTOR SMD CODE PACKAGE SOT363
Transistor SMD marking code NV
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Untitled
Abstract: No abstract text available
Text: BAP70AM Silicon PIN diode array Rev. 3 — 27 January 2014 Product data sheet 1. Product profile 1.1 General description Four planar PIN diode array in SOT363 small SMD plastic package. 1.2 Features and benefits High voltage current controlled RF resistor for RF attenuators
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BAP70AM
OT363
AEC-Q101
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PUMH24
Abstract: TRANSISTOR SMD MARKING CODES TRANSISTOR SMD CODE PACKAGE SOT363
Text: PUMH24 NPN/NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ Rev. 03 — 15 October 2004 Product data sheet 1. Product profile 1.1 General description NPN/NPN resistor-equipped transistors in a SOT363 SC-88 SMD plastic package. 1.2 Features
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PUMH24
OT363
SC-88)
PUMH24
TRANSISTOR SMD MARKING CODES
TRANSISTOR SMD CODE PACKAGE SOT363
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8 pin IC 34063
Abstract: 34063 34063 schematic MARKING A2a SOT363
Text: What H E W LET T 1 "KM PA C K A R D 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features Surface Mount SOT-363 SC-70 Package Applications Pin Connections and Package Marking • +8 dBm Pj dB at 1.9 GHz • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at
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INA-34063
OT-363
SC-70)
5967-5768E
8 pin IC 34063
34063
34063 schematic
MARKING A2a SOT363
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