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    MARKING A1 TRANSISTOR Search Results

    MARKING A1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    MARKING A1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DSAF001

    Abstract: No abstract text available
    Text: Tentative DSAF001 Total pages page DSAF001 Silicon PNP epitaxial planar type For general amplification Marking Symbol : A1 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DSAF001 DSAF001

    DSC8505

    Abstract: No abstract text available
    Text: DSC8505 Tentative Total pages page DSC8505 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5G Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DSC8505 DSC8505

    DSC8Q01

    Abstract: No abstract text available
    Text: DSC8Q01 Tentative Total pages page DSC8Q01 Silicon NPN epitaxial planar dalington type For Low-frequency amplifier Marking Symbol : 5K Package Code : MT-2-A1-B Internal Connection C Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open


    Original     		PDF DSC8Q01 DSC8Q01

    DSA4001

    Abstract: a1r marking Marking a1s
    Text: Tentative DSA4001 Total pages page DSA4001 Silicon PNP epitaxial planar type For general amplifier Marking Symbol : A1 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DSA4001 DSA4001 a1r marking Marking a1s

    DSC8102

    Abstract: No abstract text available
    Text: DSC8102 Tentative Total pages page DSC8102 Silicon NPN epitaxial planar type For Low-frequency amplifier Marking Symbol : 5D Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DSC8102 DSC8102

    MT-2-A1-B

    Abstract: DSA8101
    Text: DSA8101 Tentative Total pages page DSA8101 Silicon PNP epitaxial planar type For low-frequency output amplification Marking Symbol 4C Package Code : MT-2-A1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF DSA8101 MT-2-A1-B DSA8101

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current


    Original     		PDF LBAW56WT1G 3000/Tape LBAW56WT3G 10000/Tape

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648

    02n60

    Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E

    SMD transistor MARKING CODE 43

    Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 31 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistor;


    Original     		PDF PDTC114E resistor-equipPDTC114EE PDTC114EU PDTC114EEF SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D

    TRANSISTOR SMD MARKING CODE DZ

    Abstract: smd code marking LP marking PP16 code PDTA124XE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC124X series NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 18 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC124X PDTC124XEF PDTC124XE TRANSISTOR SMD MARKING CODE DZ smd code marking LP marking PP16 code PDTA124XE

    PDTC143EK

    Abstract: PDTC143E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143E PDTC143ET PDTC143EU PDTC143EE PDTC143EK

    MOSFET MARK y2

    Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		PDF MOS200501 H01N60S 183oC 217oC 260oC 245oC 10sec H01N60SI, MOSFET MARK y2 transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60SI

    MARKING SMD npn TRANSISTOR R

    Abstract: TRANSISTOR SMD MARKING CODE 056 PDTA123JU PDTC123JU
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 27 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC123J resistor-PDTC123JT PDTC123JEF PDTC123JE MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE 056 PDTA123JU PDTC123JU

    MOSFET MARK y2

    Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI

    PDTA144E

    Abstract: TRANSISTOR SMD MARKING CODE spt marking A1 smt3 PNP transistor TRANSISTOR SMD MARKING CODE 42 Marking Code SMD transistors smd code marking LP marking PP16 code smd TRANSISTOR code marking e1 PDTA144ES PDTA144EE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA144E series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 Apr 20 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA144E 01-May-99) TRANSISTOR SMD MARKING CODE spt marking A1 smt3 PNP transistor TRANSISTOR SMD MARKING CODE 42 Marking Code SMD transistors smd code marking LP marking PP16 code smd TRANSISTOR code marking e1 PDTA144ES PDTA144EE

    MOSFET MARK y2

    Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1

    MOSFET MARK y2

    Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
    Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC H01N60I, H01N60J MOSFET MARK y2 H01N60I MOSFET MARK H1 H01N60J TL 434 mosfet sn60

    MOSFET MARK y2

    Abstract: mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40 H01N60
    Text: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200502 H01N60 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 mosfet k 61 y1 mosfet y1 MOSFET MARK H1 marking code k1 marking y1 H01N60I marking A1 TRANSISTOR PB40

    transistor SMD t4

    Abstract: PDTC143XE marking code E2 p SMD Transistor PDTA143 PDTA143XE PDTA143X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143X series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143X PDTC143XT PDTC143XE transistor SMD t4 PDTC143XE marking code E2 p SMD Transistor PDTA143 PDTA143XE PDTA143X

    PDTA143XE

    Abstract: PDTC143XE PDTA143X smd code marking LP PDTA143
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Mar 14 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA143X 01-May-99) PDTA143XE PDTC143XE smd code marking LP PDTA143

    Field-Effect Transistors

    Abstract: SOT54variant diodes PACKAGE
    Text: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N


    Original     		PDF OD110 OD323 OD523 OT54variant OT143B OT143R OT323 OT343N OT343R OT363 Field-Effect Transistors SOT54variant diodes PACKAGE

    TRANSISTOR SMD MARKING CODE spt

    Abstract: ta114 Marking Code For SMD Devices SMD PNP MARKING DE PDTA114
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114T series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open Product specification Supersedes data of 1999 Apr 13 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open


    Original     		PDF PDTA114T 01-May-99) TRANSISTOR SMD MARKING CODE spt ta114 Marking Code For SMD Devices SMD PNP MARKING DE PDTA114

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6