Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0054A AM-7S03 Package Dimensions unit : mm Light Receiving Side (2.5) Overcoat Side Lead Wires 150.0 ±0.5 141.9 ±0.2 Effective Area (8) 165.0 Wire Overcoat 162.0 ±0.5 ±0.2 (15) (82.5) B ±5 155 A 155 ±5 (1.5) Glass Juts(4 Corners)
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ENA0054A
AM-7S03
155mm
71608HKIM/D1505HKIM
A0054-1/2
A0054-2/2
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NC7S04M5X-NL
Abstract: Marking FA SOT23-5 MARKING CODE S04 sc70-5 MARKING CODE fA single end diode sot-23 mark pd sot 23-5 marking code fairchild 7S04 marking
Text: Revised August 2004 NC7S04 TinyLogic HS Inverter General Description Features The NC7S04 is a single high performance CMOS Inverter. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad VCC range. ESD protection diodes inherently guard both input
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NC7S04
Bal2005
OT-23-5
SC70-5
AN-5003:
PC100
AN-5055:
NC7S04M5X-NL
Marking FA SOT23-5
MARKING CODE S04
sc70-5 MARKING CODE fA
single end diode sot-23 mark pd
sot 23-5 marking code fairchild
7S04 marking
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BMX XBP 0600
Abstract: Telemecanique xsp BMX p34 2020 BMX AMO 0410 telemecanique altivar 31 fault codes bmx ddi 3202K BMXFCW303 BMX ami 0800 BMX AMI 0410 modicon plc PID EXAMPLE
Text: Automation & Control Modicon M340 automation platform Unity Catalogue October 06 6 This international site allows you to access all the Telemecanique products in just 2 clicks via comprehensive range data-sheets, with direct links to: b Complete library: technical documents,
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DIA6ED2061001EN
BMX XBP 0600
Telemecanique xsp
BMX p34 2020
BMX AMO 0410
telemecanique altivar 31 fault codes
bmx ddi 3202K
BMXFCW303
BMX ami 0800
BMX AMI 0410
modicon plc PID EXAMPLE
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diode MARKING CODE A9
Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Text: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"
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160-i
f-1SS349--
SS181
SS184
SS187
SS190
1SS307
SS193
HN2D01P
HN1D01F
diode MARKING CODE A9
02CZ6
02CZ2
s32 schottky diode
SS322
46/SMC 5/L4F1 DIODE
List of Marking
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TJ3 diode bridge
Abstract: No abstract text available
Text: POWEREX INC 15E D • 75=1^51 fOMERSr 0003^=15 T ■ r ^ z P á r íE i OPEN-BRIK Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 P h B S B C O IlttO l
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BP107,
TJ3 diode bridge
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qml-38535
Abstract: CT211 vs02 VS-01 5962-90932
Text: DESC FORM 193 SEP 87 D I S T R I B U T I O N S T A T E M E N T A. >U S GOVHNMENT PRINTING OfFICE: 1987 — 748-129/40911 5962-E008 A p p ro v e d lor p u b lic r e le a se ; d istrib u tio n is u n lim ite d . 1. SCOPE 1.1 Scope. This drawing forms a part of a one part - one part number documentation system see
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4S444
5962-E008
QML-38535.
QML-38535
MIL-BUL-103.
MIL-BUL-103
1990-7S0-S27R
CT211
vs02
VS-01
5962-90932
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single phase parallel inverter using 2 SCR
Abstract: scr control circuit for welding prx scr 58 240 PRX T820 marking w26 W08 marking diode prx t7s0 marking 7S0 scr welding BP107
Text: fOMERSr POWEREX INC 15E D • 75=1^51 0003^=15 T ■ r ^ z P á r íE i OPEN-BRIK Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 P h B S B C O IlttO l
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P3Z7BCT7XTW16
08XX00
12XX00
16XX00
6504DN
7504DN
6003DH
7503DH
9003DH
single phase parallel inverter using 2 SCR
scr control circuit for welding
prx scr 58 240
PRX T820
marking w26
W08 marking diode
prx t7s0
marking 7S0
scr welding
BP107
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7s0 marking
Abstract: No abstract text available
Text: TC7S02FJC7S02FU 2-INPUT NOR GATE The TC7S02 is a high speed C2MOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The internal circuit is composed of 3 stages including
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TC7S02FJC7S02FU
TC7S02
TC74HC
7s0 marking
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FD-24K
Abstract: FD123 arco capacitors ARCO Mica capacitors F0752 SCDM ARCO 36KJ RS-153 a10u
Text: Dipped Mica Capacitors Part Number Construction DM 15 Type’ Size2 1. 2. 3 TR 510 Packaging6 Capacitance3 Tolerance4 Type: DM Size: 05, 10; 15; 19; 20; 30 Capacitance: The first two digits are significant, the last digit indicates the number of zeros. Tolerance: D=t0.5pF; E=±1/2%; F=±1%;
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digi90
50VDC
202IJ
FD-24K
FD123
arco capacitors
ARCO Mica capacitors
F0752
SCDM
ARCO
36KJ
RS-153
a10u
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SFH 462
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter SFH 483 M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode mit hohem Wirkungsgrad • Die Anode ist galvanisch mit dem
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450kAW
160kAÂ
950nm1000
SFH 462
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Mullard Mullard quick reference guide
Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Text: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)
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BZX91
1N825
1N827
1N829
1N914
1N916
1N4001G,
CV7367
1N4002G,
CV7756
Mullard Mullard quick reference guide
CV7476
CV7143
CV8805
BZV46
CV 7476 mullard
CV7099
CV7100 diode
mullard germanium
BYW 64 bridge rectifier
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clarostat POTENTIOMETER
Abstract: clarostat RV4 potentiometers LA 2786 sj 2907 J-D1N clarostat cm POTENTIOMETER rheostat 25 watt 1000 ohm JAIN200P 201 200 OHM Variable Resistors Potentiometer Logarithmic Potentiometer B 203
Text: Type J Hot-Molded Panel Potentiometers F eatures _ B e n e fits - • 2.25 Watts @ 70 C . ■ 50 Ohms to 5 Megohms . ■ Multiple Sections/Concenti» Shafts . . ■ UL Approved Switches . . .
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Untitled
Abstract: No abstract text available
Text: /T u rm LT 112 0 A TECHNOLOGY Micropower Regulator with Com parator and Shutdown F€RTUR€S DCSCRICTIOn • 20nA Supply Current ■ 8-Lead SOIC ■ 125mA Output Current ■ 2.5V Reference ■ Reference Output Sources 4mA and Sinks 4mA ■ Open Collector Comparator Sinks 10mA
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125mA
LT1120A
20jxA
125mA.
50jiA
MJE2955
LT1120A
100jiF
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4502BN
Abstract: qml-38535 4502B CDFP4-F16
Text: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REV 10 SHEET PREPARED BY
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5962-E097-96
MIL-BUL-103.
MIL-BUL-103
0017ET7
4502BN
qml-38535
4502B
CDFP4-F16
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Untitled
Abstract: No abstract text available
Text: Rugged Environment DC-DC Converters <30 W IBEK DC-DC Converters 1 Watt-Family 1 Watt-Family In put to o u tp u t isolation te st voltag e up to 5 kV rrr,s 1 or 2 O u tpu ts: IC R 1, IXR 1, IY R 1, IZ R 1 1, 2 or 4 O u tp u ts : IW R 1 Extremely high isolation test voltages
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5T75Gfc
QQ00723
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5962-8768401MQX
Abstract: 5962-8768401QX EL34 circuit EL34 EL34 amplifier circuit smd marking JD smd marking KD qml-38535 16T MARKING EL34 single ended
Text: MIL-M—38510/87 684 REVISIONS LTR APPROVED DATE YR-MO-DA DESCRIPTION A Add case outline U. Add vendor CAGE 18324. Add programming method B. Change 4.3.1c and 4.3.1e. Editorial changes throughout. 1989 MAR 01 B Add device type 02 editorial changes throughout. Add test
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MIL-M-38510/87684
MIL-M-38510/87684,
MIL-M-38510
5962-8768401MQX
5962-8768401MUX
5962-8768402MQX
5962-8768402MUX
5962-8768401QX
5962-8768401UX
5962-8768402QX
EL34 circuit
EL34
EL34 amplifier circuit
smd marking JD
smd marking KD
qml-38535
16T MARKING
EL34 single ended
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5962-XXXXXZZ
Abstract: SCR GATE DRIVER SCR T 780 Applications Handbook qml-38535 SCR Applications Handbook SCR Handbook, General electric MIL-STD-480 5962-90932
Text: DESC FORM 193 > U S G O V H N M E N T P R IN T IN G O fFIC E: 1 9 8 7 — 7 4 8 -1 2 9 /4 0 9 1 1 SEP 87 D IS T R IB U T IO N S T A T E M E N T A. This Material 5962-E008 A p p ro v e d lo r p u b lic re le a s e ; d is trib u tio n is u n lim ite d . C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r
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4S444
5962-E008
QML-38b3i>
QML-38535
MIL-BUL-103.
MIL-BUL-103
1990-7S0-S27R
5962-XXXXXZZ
SCR GATE DRIVER
SCR T 780 Applications Handbook
SCR Applications Handbook
SCR Handbook, General electric
MIL-STD-480
5962-90932
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division R C 6100 Horizontal Line Genlock Features Applications • High speed tracking sync separator easily follows hum or average picture level APL fluctuations • Glitch remover for operation in high im pulse noise
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RC6100
highfre50
TMC1175
TDC3310
7ST73tiO
RC6100
RC6100M
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MIL-STD-430
Abstract: qml-38535
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-M A PPROVED REV SHEET REV SH EET REV STATUS O F SHEETS REV SH E E T 1 2 3 4 5 6 7 8 10 11 12 PMIC N/A ^ O M & L & k s S iiW STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE
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129J60VII
5962-E109
QML-38535.
MIL-BUL-103.
MIL-BUL-103
1990-7S0-527R
MIL-STD-430
qml-38535
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Untitled
Abstract: No abstract text available
Text: Dipped Mica Capacitors Part Number Construction DM 15 Type’ Size” 1. 2. 3 4. 6. 510 TR Packaging6 Capacitance3 Tolerance4 Type: DM Size: 05, 10; 15; 19; 20; 30 Capacitance: The first two digits are significant, the last digit indicates the number of zeros.
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50VDC
100VDC
500VDC
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d78p328
Abstract: d78p328cw EV-9200G64 D78P32 78327 PD78P328CW PA-78P328CW d78p PA-78P328GF 64-pin plastic
Text: DATA SHEET M O S Integrated Circuit _ / ¿ P D 7 8 P 3 2 8 16/8-BIT SIN G LE-CH IP M IC R O C O N T R O LLE R The MPD78P328 is a product provided by replacing the /¿PD75328's internal mask ROM with one-time PROM or EPROM. The one-time PROM version is programmable only once and is useful for small-lot production of many
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16/8-BIT
uPD78P328
uPD75328
/iPD78328
IEU-1268
iPD78328
/iPD78P328
U10209EJ4V0DS01
C1996
b427S25
d78p328
d78p328cw
EV-9200G64
D78P32
78327
PD78P328CW
PA-78P328CW
d78p
PA-78P328GF
64-pin plastic
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Untitled
Abstract: No abstract text available
Text: MT4C4007J L 1 MEG X 4 DRAM (M IC R O N 1 MEG x 4 DRAM DRAM 5V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH PIN ASSIGNMENT (Top View) • • • • • Single +5V ±10% power supply JEDEC-standard pinout and packages High-performance CMOS silicon-gate process
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MT4C4007J
024-cycle
128ms
20/26-Pin
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7M60
Abstract: No abstract text available
Text: Ffrëlips ÇOTp g rg g F reiîrnìm ry s;pgc ijficasien HVR High v o lta g e - high vaio - th ic k fflm re sisto rs FEATU S ES QUICK REFERENCE ÜATA + High temperature a:ns veltage stability j # Suitable tor poten&ometer potting: applteaifcns # V V i: d e
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARYc Q April 1996 Edition 2.2 PRO DUCT PROFILE SHEET _ FUJITSU M B 8 1 V 1 6 8 0 0 A -60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM The Fujitsu MB81V16800A is a fully decoded CMOS Dynamic RAM DRAM that contains
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MB81V16800A
512-bits
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