marking v14
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Text: Smart High-Side Power Switch ISP762T 6PDUW 3RZHU +LJK 6LGH 6ZLWFK HDWXUHV 3URGXFW 6XPPDU\ • 2YHUORDG SURWHFWLRQ 2YHUYROWDJH SURWHFWLRQ 9EE $= 9 • &XUUHQW OLPLWDWLRQ 2SHUDWLQJ YROWDJH 9EE RQ 9 • 6KRUW FLUFXLW SURWHFWLRQ 2Q VWDWH UHVLVWDQFH 521 PΩ • 7KHUPDO VKXWGRZQ ZLWK UHVWDUW
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ISP762T
marking v14
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
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FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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MARKING WR
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Text: 3$&'1&&& 6' 3URWHFWLRQ $UUD\V &KLS 6FDOH 3DFNDJH HDWXUHV 3URGXFW 'HVFULSWLRQ 7KH 3$&'1& 3$&'1& DQG 3$&'1& DUH WUDQVLHQW YROWDJH VXSSUHVVRU DUUD\V WKDW SURYLGH D YHU\ KLJK OHYHO RI SURWHFWLRQ IRU VHQVLWLYH HOHFWURQLF FRPSRQHQWV WKDW PD\ EH VXEMHFWHG WR (6' 7KH EDFN
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MARKING A2
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Text: 3$&'1&&& 6' 3URWHFWLRQ $UUD\V &KLS 6FDOH 3DFNDJH HDWXUHV 3URGXFW 'HVFULSWLRQ 7KH 3$&'1& 3$&'1& DQG 3$&'1& DUH WUDQVLHQW YROWDJH VXSSUHVVRU DUUD\V WKDW SURYLGH D YHU\ KLJK OHYHO RI SURWHFWLRQ IRU VHQVLWLYH HOHFWURQLF FRPSRQHQWV WKDW PD\ EH VXEMHFWHG WR (6' 7KH EDFN
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marking glv
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63-37
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Text: Carbon Composition Trimmer Potentiometers/EVND 6 mm Square Carbon Composition Trimmer Potentiometers, Dustproof 6FE 7\SH (91' Malaysia Q Features O 7RSDGMXVWRUVLGHDGMXVWDYDLODEOH O +LJKO\ HIILFLHQF\ DXWRPDWLF LQVHUWLRQ ZLWK UDGLDO WDSLQJSDFNDJH
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RC-1008
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3843
Abstract: marking WZR marking 1A
Text: &63 0, &KDQQHO +HDGVHW (0, LOWHU ZLWK (6' 3URWHFWLRQ )HDWXUHV 3URGXFW 'HVFULSWLRQ 7KH &63(0, LV D ORZSDVV ILOWHU DUUD\ GHVLJQHG VSHFLILFDOO\ WR UHGXFH (0,5), HPLVVLRQV DQG SURYLGH (6' SURWHFWLRQ IRU D KHDGVHW SRUW RQ D FHOOXODU DQG PRELOH GHYLFHV 7KH &63(0, LQWHJUDWHV WZR KLJK
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6367
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marking 6LG
Abstract: NS6A13AT3G tvs diode sma 403D CASE 403d suppressor sma footprint wave soldering
Text: NS6A13AT3G 600 Watt Peak Power Zener Transient Voltage Suppressor Unidirectional http://onsemi.com The NS6A13AT3G is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener
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NS6A13AT3G
NS6A13AT3G
NS6A13A/D
marking 6LG
tvs diode sma
403D
CASE 403d suppressor
sma footprint wave soldering
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marking 6LG
Abstract: NS6A13AT3G
Text: NS6A13AT3G 600 Watt Peak Power Zener Transient Voltage Suppressor Unidirectional http://onsemi.com The NS6A13AT3G is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener
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NS6A13AT3G
NS6A13AT3G
NS6A13A/D
marking 6LG
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