PG12FBUSV
Abstract: No abstract text available
Text: SEMICONDUCTOR PG12FBUSV MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking 2. Marking 0 1 2F 1 2 3 No. Item Marking Description Device Mark 2F PG12FBUSV hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index
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PG12FBUSV
PG12FBUSV
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PG12FBUSC
Abstract: No abstract text available
Text: SEMICONDUCTOR PG12FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking 2 2 0 1 2F 1 1 No. Item Marking Description Device Mark 2F PG12FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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PG12FBUSC
PG12FBUSC
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MARKING 2F SOT23
Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
Text: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BC850
OT-23
MARKING 2F SOT23
sot23 marking 2f
2f bc850
BC850
marking 2f 3
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F
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OT-23
MMBT2907A
OT-23
MMBT2222A)
-500mA
-150mA
-15mA
-500mA
-50mA
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marking 2f 3
Abstract: MMBT2222A MMBT2907A marking 2f
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
MMBT2222A)
-10mA
-500mA
-150mA
-15mA
-500mA
-50mA
marking 2f 3
MMBT2222A
MMBT2907A
marking 2f
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR
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OT-23
MMBT2907A
OT-23
MMBT2222A)
Temperature-10V
-10mA
-500mA
-150mA
-15mA
-500mA
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2F PNP SOT23
Abstract: marking 2f 2f transistor SOt23
Text: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
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MMBT2907A
OT-23
OT-23
MMBT2222A)
-150mA
-15mA
-10mA
-500mA
2F PNP SOT23
marking 2f
2f transistor SOt23
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Untitled
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
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pnp 2f
Abstract: No abstract text available
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-23
QW-R206-030
pnp 2f
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pnp 2f
Abstract: marking 2F
Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 1 2 MARKING 3 2F SOT-323 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT2907A
MMBT2907A
OT-323
QW-R220-001
pnp 2f
marking 2F
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CMBT2907
Abstract: CMBT2907A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS
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OT-23
CMBT2907
CMBT2907A
500mA;
C-120
CMBT2907
CMBT2907A
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS
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OT-23
CMBT2907
CMBT2907A
500mA;
C-120
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2SA1037KGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * 2F- .019 (0.50) (2) .103 (2.64)
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2SA1037KGP
OT-23)
OT-23
150mW
120mW
2SA1037KGP
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CMBT2907
Abstract: CMBT2907A
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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ISO/TS16949
OT-23
CMBT2907
CMBT2907A
500mA;
C-120
CMBT2907
CMBT2907A
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2f bc850
Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G
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OT-23
BC849
BC850
BC849B
BC849C
BC850B
8C850C
2f bc850
BC849
BC849B
BC849C
BC850
BC850B
BC850C
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2907 TRANSISTOR PNP
Abstract: 2907 2907 pnp 2907 pnp transistor
Text: PNP Silicon Switching Transistor SXT 2907 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
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Q68000-A8300
OT-89
2907 TRANSISTOR PNP
2907
2907 pnp
2907 pnp transistor
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part MARKING k48
Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E
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OCR Scan
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CMOD2004
CMLD2004
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
BC846A
CMSZ5250B
CMST3904
BC846B
part MARKING k48
marking bc p28
CMSD4448
W4W MARKING
CM0Z15L
CMZ5936B
CM0Z11V
CMZ5945B
marking 6ca
marking code ca2
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CMBT2907
Abstract: CMBT2907A
Text: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_
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OCR Scan
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CMBT2907
CMBT2907A
CMBT2907
500mA;
150mA;
CMBT2907A
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Untitled
Abstract: No abstract text available
Text: OIL CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT2907 = 2B CMBT2907A = 2F JS.O 2.8 0»14 0.48 038 3 Pin configuration 1 = BASE 2 * EMITTER 2.6 2.4 3 = COLLECTOR
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CMBT2907
CMBT2907A
CMBT2907
150mA;
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Untitled
Abstract: No abstract text available
Text: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4
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CMBT2907
CMBT2907A
150mA;
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BC850
Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Text: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER
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BC849
BC850
BC849B
BC849C
BC850B
8C850C
BC849
BC850
BC850B
BCS49
BC849B
BC849C
BC850C
8C850
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MARKING 7A SOT89
Abstract: SXT2907 SXT2907A T2907A
Text: SIEMENS PNP Silicon Switching Transistor SXT 2907 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E Maximum Ratings
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Q68000-A8300
OT-89
EHP00899
MARKING 7A SOT89
SXT2907
SXT2907A
T2907A
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2907 TRANSISTOR PNP
Abstract: transistor 2907 Q68000-A8300 MARKING 7C
Text: SIEMENS PNP Silicon Switching Transistor • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage SXT 2907 A Type Marking Ordering Code tape and reel PinC Contigui ation 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E
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Q68000-A8300
OT-89
----VBE-20V
fl53SbDS
23SLDS
Q155blfl
2907 TRANSISTOR PNP
transistor 2907
MARKING 7C
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IC marking jw
Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
Text: £ 3 0 3 3 *1 4 DÜÜÜ73T 4^=1 m BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C8S0C = 2G Pin configuration PA CKA GE O UTLIN E D ETAILS ALL D IM EN SIO N S IN mm _3.0_
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BC849
BC850
BC849B
BC849C
BC850B
100frequency
IC marking jw
BC849
BC849B
BC849C
BC850
BC850B
BC850C
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