MMBT6428
Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
Text: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087
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MMBT6428
KST6428
MMBT6429
MMBT2484
KST2484
MMBT5088
KST5088
MMBT5089
KST5089
MMBT5086
MMBT6428
mmbth10
KST2484
KST5086
KST5088
KST5089
KST6428
MMBT2484
MMBT5086
MMBT5088
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BCW60BLT1
Abstract: BCW60CLT1 BCW60DLT1 marking 1R PNP marking code 1Y
Text: BCW60LT1 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61LT1 are recommended.
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BCW60LT1
BCW61LT1
OT-23
BCW60BLT1
BCW60CLT1
BCW60DLT1
100MHz
200Hz
marking 1R PNP
marking code 1Y
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4009-001
Abstract: 4009 NOT GATE IC SRA2201EF marking 1R
Text: SRA2201EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201EF
OT-523F
KSR-4009-001
-10mA
-10mA,
4009-001
4009 NOT GATE IC
SRA2201EF
marking 1R
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3009
Abstract: 13001 TRANSISTOR SRA2201U
Text: SRA2201U Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201U
OT-323
KSR-3009-000
-10mA
-10mA,
3009
13001 TRANSISTOR
SRA2201U
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marking 1R
Abstract: SRA2201E
Text: SRA2201E Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201E
OT-523
KSR-4025-000
-10mA
-10mA,
marking 1R
SRA2201E
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ic 4072
Abstract: SRA2201K
Text: SRA2201K Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201K
OT-623F
KSR-4072-000
-10mA
-10mA,
ic 4072
SRA2201K
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3006 8 pin transistor
Abstract: 13001 TRANSISTOR SRA2201UF
Text: SRA2201UF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201UF
OT-323F
KSR-3006-000
-10mA
-10mA,
3006 8 pin transistor
13001 TRANSISTOR
SRA2201UF
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IC 4009 DATASHEET
Abstract: 4009 data sheet pdf file 4009 be se 4009 SRA2201EF
Text: SRA2201EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201EF
OT-523F
KSR-4009-000
-10mA
-10mA,
IC 4009 DATASHEET
4009 data sheet pdf file
4009 be
se 4009
SRA2201EF
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2SB970
Abstract: No abstract text available
Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB970 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package,allowing downsizing of the equipment and automatic 0.4 3 Low collector-emitter saturation voltage VCE sat .
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2SB970
OT-23
2SB970
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SRA2201E
Abstract: No abstract text available
Text: SRA2201E PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features COMMON • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and
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SRA2201E
OT-523
KSD-R5E023-000
SRA2201E
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2SB970
Abstract: No abstract text available
Text: Transistor 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm +0.2 2.8 –0.3 • Features 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 0.95 +0.2 ● 0.65±0.15 Low collector to emitter saturation voltage VCE sat .
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2SB970
2SB970
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SRA2201EF
Abstract: No abstract text available
Text: SRA2201EF PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN COMMON • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and
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SRA2201EF
OT-523F
KSD-R5E024-000
SRA2201EF
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SRA2201U
Abstract: No abstract text available
Text: SRA2201U PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features COMMON IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and
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SRA2201U
OT-323
KSD-R5D023-000
SRA2201U
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SRA2201UF
Abstract: No abstract text available
Text: SRA2201UF PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and
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SRA2201UF
OT-323F
KSD-R5D024-002
SRA2201UF
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marking 1R
Abstract: No abstract text available
Text: SRA2201UF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201UF
SRA2201UF
OT-323F
KSD-R5D024-000
KSD-R5D024-000
marking 1R
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Untitled
Abstract: No abstract text available
Text: SRA2201E Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201E
SRA2201E
OT-523
KSR-4025-001
KSR-4025-001
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Untitled
Abstract: No abstract text available
Text: SRA2201EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201EF
SRA2201EF
OT-523F
KSR-4009-001
KSR-4009-001
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Untitled
Abstract: No abstract text available
Text: SRA2201K Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201K
SRA2201K
OT-623F
KSR-4072-001
KSR-4072-001
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Untitled
Abstract: No abstract text available
Text: SRA2201UF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2201UF
OT-323F
KSR-3006-001
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sot-23 Marking G1
Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Text: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0
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OT-23
MMBT5088
MMBT5089
MMBT2484
MMBT6428
MMBT6429
MMBT5087
MMBT5086
MMBTA42
sot-23 Marking G1
marking 1U sot-23
MMBC1653N4
MMBC1654N5
N3 SOT-23
MMBC1653
MMBC1653N2
MMBC1653N3
G1 marking sot23
sot23 MARKING 1l
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BS33G
Abstract: 2N3906V transistor 2N3 marking O9
Text: SEMICONDUCTOR TECHNICAL DATA 2N3906V EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Icgj^-SOnAiMax. , IBL=-50nA Max.) @VCe=-3 OV, V EB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage
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2N3906V
-50nA
-50mA,
300/iS,
BS33G
2N3906V
transistor 2N3
marking O9
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2T203
Abstract: MMBT4403LT1
Text: M C C SOT-23 Plastic-Encapsulate Transistors MMBT4403LT1 TRANSISTOR PNP 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES Pc m : 0.3 W (Tam b=251C ) Collector current ICM: -0.6 A C o llecto r-base vo ltag e V{gr)cbo :-40V Operating and storage junction temperature range
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OT-23
MMBT4403LT1
-150m
MMBT4403LT1
2T203
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2SA1163
Abstract: No abstract text available
Text: 2SA1163 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 1 6 3 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : Vq e o —_ 120V Excellent hjrE Linearity : hpE dC - -0.1m A) / hpE dC = - 2mA) = 0.95 (Typ.)
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2SA1163
2SC2713
2SA1163
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marking AE 5pin
Abstract: AE MARKING 5PIN dual transistors UMT5
Text: 11 UMS N FM S A Transistor, dual, PNP Features Dimensions Units : mm • • • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages package marking: UMS1N and FMS1A; S1 package contains two transistors, 2SA1037AK, with common emitters Applications •
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SC-74A)
2SA1037AK,
marking AE 5pin
AE MARKING 5PIN
dual transistors UMT5
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