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    MARKING 05 SOT 89 Search Results

    MARKING 05 SOT 89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 05 SOT 89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STMicroelectronics smd marking code

    Abstract: BGA and QFP Package 14x14 STMICROELECTRONICS MSL STMicroelectronics date code tssop-14 HiQuad package STMicroelectronics pentawatt date code opto mold compound infineon msl TQFP 14X20 ST TSSOP Marking
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN CRP/04/744 LEAD-FREE CONVERSION PROGRAM Compliance with RoHS 1 1 RoHS = Restriction of the use of certain Hazardous Substances European directive 2002/95/EC November 18, 2004 Page 1/12 2004 STMicroelectronics - All Rights Reserved


    Original     		PDF CRP/04/744 2002/95/EC) STMicroelectronics smd marking code BGA and QFP Package 14x14 STMICROELECTRONICS MSL STMicroelectronics date code tssop-14 HiQuad package STMicroelectronics pentawatt date code opto mold compound infineon msl TQFP 14X20 ST TSSOP Marking

    STMicroelectronics smd marking code

    Abstract: smd marking code stmicroelectronics BGA bga 10x13 BGA 15X15 BGA 23X23 HEPTAWATT SMD Marking STMicroelectronics tqfp INFINEON package tqfp PART MARKING PLCC Part Marking STMicroelectronics Date Code Marking STMicroelectronics PACKAGE DPAK
    Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MLD-MIC/05/943 Notification Date 02/23/2005 CONVERSION TO PB-FREE PRODUCTION MIC - MICROCONTROLLERS 1/4 PCN MLD-MIC/05/943 - Notification Date 02/23/2005 Table 1. Change Identification Product Identification Product Family/Commercial Product


    Original     		PDF MLD-MIC/05/943 MLD-MIC/05/943 STMicroelectronics smd marking code smd marking code stmicroelectronics BGA bga 10x13 BGA 15X15 BGA 23X23 HEPTAWATT SMD Marking STMicroelectronics tqfp INFINEON package tqfp PART MARKING PLCC Part Marking STMicroelectronics Date Code Marking STMicroelectronics PACKAGE DPAK

    V = Device Code

    Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
    Text: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


    Original     		PDF MC74VHC1G05 V = Device Code diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004

    MARKING 3D SOT-363

    Abstract: Schottky barrier sot-23 Marking 3D 3D SOD-523 LRB715WT1 SC-75 SC-89 3D marking sot23 3D SOT363 DIODE sot-23 Marking 3D DIODE SC59 Marking 3D
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB715WT1 z Features Small surface mounting type SC-89 Low V F and low IR High reliability 3 zConstruction silicon epitaxial planar 2 z Pb-Free Package is Available. 1 SC-89 1 ANODE MAXIMUM RATINGS TA = 25°C


    Original     		PDF LRB715WT1 SC-89 LRB715WT1 360mm MARKING 3D SOT-363 Schottky barrier sot-23 Marking 3D 3D SOD-523 SC-75 SC-89 3D marking sot23 3D SOT363 DIODE sot-23 Marking 3D DIODE SC59 Marking 3D

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The LDAP222T1 device is housed in the SC-89 package which is designed


    Original     		PDF LDAP222T1 SC-89 LDAP222T1 SC-89

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


    Original     		PDF AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363

    marking codes fairchild

    Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		PDF AND8004/D 14xxx r14525 AND8004/D marking codes fairchild SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L

    marking codes fairchild

    Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


    Original     		PDF AND8004/D r14525 marking codes fairchild HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D

    A6 sot-23

    Abstract: BAS16 sot-23 cd 5411 marking 855 sot 353 MARKING 358 sot-23 BAS16
    Text: BAS16 SOT 23 High Speed Switching Diodes Feature: • Silicon Planar Epitaxial High-Speed Diode. Package Outline Details Marking BAS16 = A6 Pin configuration 1 = Anode 2 = NC 3 = Cathode Dimensions : Millimetres Absolute Maximum Ratings Limiting values Symbol


    Original     		PDF BAS16 A6 sot-23 BAS16 sot-23 cd 5411 marking 855 sot 353 MARKING 358 sot-23 BAS16

    BFR93A

    Abstract: No abstract text available
    Text: c/J.£ii£u u <~ £mi-L,onaueto'i L/^ioaucti, Line. TELEPHONE: 973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN RF Transistor BFR93A DESCRIPTION SOT- 2 3 package • High Power Gain A"* """••-


    Original     		PDF BFR93A 500MHz BFR93A

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G126 353/SC marking CODE W2D marking w2d

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


    Original     		PDF MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D

    diode Marking code v3

    Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
    Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74HC1G14 MC74HC 353/SC diode Marking code v3 sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64

    V = Device Code

    Abstract: No abstract text available
    Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G02 353/SC V = Device Code

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08

    V = Device Code

    Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
    Text: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    Original     		PDF MC74VHC1GT32 V = Device Code diode Marking code v3 on semi aa sot353 TOREX TOP CODE

    V = Device Code

    Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
    Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A

    LBZX84B5V1LT1G

    Abstract: sot353 marking e5 LBZX84B10LT1G SC 2630 LBZX84B18LT1G LBZX84B27LT1G A5 SC-89 LBZX84B16LT1G marking J2 sot-23 ZENER marking a5 sot-23
    Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84B2V0LT1G SERIES 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device CONSTRUCTION SOT– 23 ƽSilicon epitaxial planar


    Original     		PDF LBZX84B2V0LT1G OT-23 V-36V) LBZX84B2V0LT1G OT-23 3000/Tape LBZX84B2V0LT3G 10000/Tape 360mm LBZX84B5V1LT1G sot353 marking e5 LBZX84B10LT1G SC 2630 LBZX84B18LT1G LBZX84B27LT1G A5 SC-89 LBZX84B16LT1G marking J2 sot-23 ZENER marking a5 sot-23

    PC 74 HCT 32 P

    Abstract: U-046 V = Device Code
    Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


    Original     		PDF MC74VHC1G01 PC 74 HCT 32 P U-046 V = Device Code

    marking H5 sot 23-5

    Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
    Text: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G132 marking H5 sot 23-5 vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code

    V = Device Code

    Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
    Text: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G135 V = Device Code ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5

    V = Device Code

    Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
    Text: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74VHC1G04 353/SC V = Device Code marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode

    Untitled

    Abstract: No abstract text available
    Text: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05


    OCR Scan     		PDF 2SC4132 OT-89, SC-62) 2SC4132; 2SC4132

    1SS SOT-23

    Abstract: 1SS TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC fllC D a^EDORb 0005275 R • AL6G BF 989 Marked with: M 89 YilLilFlUJNlKIIMl electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input' and Mixerstages especially for UHFTV-tuners up to 900 MHz


    OCR Scan     		PDF 569-GS 1SS SOT-23 1SS TRANSISTOR