E3S-vs1e42
Abstract: E3S-VS1B42 E3S-VS5B42R omron e3s-vs1e4 E3S-vS1b4 E3S-VS14 E3S-GS1B4 e3s-vs e3s-vs3e4 E3S-VS1E4
Text: Small Spot/Mark Sensor with Built-in Amplifier E3S-GS/VS CSM_E3S-GS_VS_DS_E_2_1 Both Red-light Models and Greenlight Models to Detect a Wide Variety of Colors Be sure to read Safety Precautions on page 5. Ordering Information Small Spot/Mark Sensor with Built-in Amplifier
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E3S-VS1E42
E3S-VS1B42
E3S-VS3E42G
E3S-VS5E42R
E3S-VS5B42R
E3S-vs1e42
E3S-VS1B42
E3S-VS5B42R
omron e3s-vs1e4
E3S-vS1b4
E3S-VS14
E3S-GS1B4
e3s-vs
e3s-vs3e4
E3S-VS1E4
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MMBFJ176 on semiconductor
Abstract: J175 MMBFJ176 6x marking sot-23 p-channel
Text: J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 P-Channel Switch Description This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers. Sourced from process 88. G S SOT-23 D Mark: 6W / 6X / 6Y TO-92 DG S
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MMBFJ175
MMBFJ176
MMBFJ177
OT-23
MMBFJ175
OT-23
MMBFJ176
MMBFJ176 on semiconductor
J175
6x marking sot-23 p-channel
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diode zener ZD 260
Abstract: KDZ12VV KDZ36VV sy 360 diode DIODE MARKING 9Y KDZ11VV KDZ13VV KDZ20VV diode zener ZL 27 KDZ33VV
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : VSC C D Normal Voltage Tolerance about 1 2 Sharp Breakdown Characteristic.
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KDZ36VV
KDZ33VV
KDZ30VV
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ27VV
20x20mm
diode zener ZD 260
KDZ12VV
KDZ36VV
sy 360 diode
DIODE MARKING 9Y
KDZ11VV
KDZ13VV
KDZ20VV
diode zener ZL 27
KDZ33VV
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na174
Abstract: MMBFJ177
Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold
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MMBFJ175
MMBFJ176
MMBFJ177
OT-23
na174
MMBFJ177
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KDZ16VV
Abstract: diode zener ZD 150 diode zener ZD 260 diode zener ZD 36 marking zn diode marking zn DIODE MARKING 9Y
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.
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KDZ11VV
KDZ12VV
KDZ13VV
KDZ15VV
KDZ16VV
20x20mm
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
KDZ16VV
diode zener ZD 150
diode zener ZD 260
diode zener ZD 36
marking zn
diode marking zn
DIODE MARKING 9Y
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DIODE MARKING 9Y
Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
Text: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.
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KDZ11VV
KDZ12VV
KDZ13VV
KDZ15VV
KDZ16VV
20x20mm
KDZ18VV
KDZ20VV
KDZ22VV
KDZ24VV
DIODE MARKING 9Y
9vv marking
kdz16vv
marking zn
diode marking 4Y
KDZ12VVY
KDZ36VV
diode zener ZD 260
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EQUIVALENT FOR J175
Abstract: EQUIVALENT FOR J174 j174 EQUIVALENT J174 J177 equivalent J175 EQUIVALENT FOR J176 J176 J177 MMBFJ177
Text: MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G D G S TO-92 SOT-23 D S Mark: 6W / 6X / 6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 88. Absolute Maximum Ratings*
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MMBFJ175
MMBFJ176
MMBFJ177
OT-23
MMBFJ175
MMBFJ176
EQUIVALENT FOR J175
EQUIVALENT FOR J174
j174 EQUIVALENT
J174
J177 equivalent
J175
EQUIVALENT FOR J176
J176
J177
MMBFJ177
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j174 transistor
Abstract: J175 J174 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 J175 transistor transistor j175
Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold
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MMBFJ175
MMBFJ175
MMBFJ176
MMBFJ177
OT-23
j174 transistor
J175
J174
J176
J177
MMBFJ176
MMBFJ177
J175 transistor
transistor j175
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j177 TRANSISTOR
Abstract: J176 J176. P-CHANNEL. TO-92 J174 J175 J177 MMBFJ175 MMBFJ176 MMBFJ177 J177 TO-92
Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold
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MMBFJ175
MMBFJ175
MMBFJ176
MMBFJ177
OT-23
j177 TRANSISTOR
J176
J176. P-CHANNEL. TO-92
J174
J175
J177
MMBFJ176
MMBFJ177
J177 TO-92
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Untitled
Abstract: No abstract text available
Text: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold
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MMBFJ175
MMBFJ175
MMBFJ176
MMBFJ177
OT-23
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J177
Abstract: J176 J175 J174 MMBFJ176 MMBFJ177 J174-177 semiconductor j175 EQUIVALENT FOR J174 MMBFJ175
Text: G D S G TO-92 SOT-23 D S Mark: 6W / 6X / 6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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OT-23
J177
J176
J175
J174
MMBFJ176
MMBFJ177
J174-177
semiconductor j175
EQUIVALENT FOR J174
MMBFJ175
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Document Number: AN4399 Rev. 1, 01/2013 Application Note High Precision Calibration of a Three-Axis Accelerometer by Mark Pedley 1 Introduction Contents 1 Three-axis accelerometers supplied for the consumer market are typically calibrated by the sensor
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AN4399
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transistors BC 543
Abstract: F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459
Text: NPN Multiple Chip Transistors Device No. [Mark] MMPQ2369A Case Style SO-16 S3 V CBO V VCES* EBO (V) (V) Min (V) Min Min VCEO 15 40 4.5 I CBO ICES* (nA) Max 400 @ VCB (V) Min 20 40 40 30 20 h FE V CE 10 10 30 100 0.35 1 0.4 1 0.2 0.2 & @ Max (mA) (V) 120
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MMPQ2369A
SO-16
FMBA14
FFB2222A
FMB2222A
MMPQ2222A
transistors BC 543
F245B
BSR57M5
fmba0656
TJ309
f256c
f245a
PN5432
PN4857
2n 5459
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qml-38535
Abstract: SMD MARKING CODE A12 0BK02
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added vendor CAGE number 6Y440 and 65786 to the drawing as approved sources of supply. Removed vendor CAGE number 0BK02 from the drawing. Also deleted ESDS from the drawing. Editorial changes throughout.
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6Y440
0BK02
5962-R349-92.
6Y440,
0EU86.
0EU86
qml-38535
SMD MARKING CODE A12
0BK02
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diode zener ZD 36
Abstract: zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22
Text: KDZ2.0W-36W SEM ICONDUCTOR ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA r CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES • Small Package : VSC • Sharp Breakdown Characteristic. • Normal Voltage Tolerance about ±6% .
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W-36W
20x20m
diode zener ZD 36
zener diode, zl 33
DIODE MARKING 9Y
zener diode zg 36
diode marking 4Y
diode zener ZL 30
diode zener ZD 15
diode zener ZL 15
zener diode BZ 22
zener diode, zl 22
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J177
Abstract: J175 mmbfj176 MMBFJ176 on semiconductor MMBFJ177
Text: s e M I O O N C U C T Q R «* J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 G1 Mark: 6W /6X/6Y P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum RatinQS
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MMBFJ175
MMBFJ176
MMBFJ177
MMBFJ175
MMBFJ176
J177
J175
MMBFJ176 on semiconductor
MMBFJ177
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART N UM BER REV. S S F —L XH 30 6Y D —MD 4 ,5 7 [0,180] 41 [0.160] PATENT P END IN G C A T H D D E MARK 4 ,9 5 [0,195] ELECTRO-OPTICAL CHARACTERISTICS Ta =25T PARAMETER MIN TYP PEAK WAVELENGTH 0,60 E0.024: <2 0.50 [0.020: 2 P L S .
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SSF-LXH306YD-MD
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 1F m tm D1FL40 Unit-mm Weight 0.058g Typ i) 400V 0.8A / Ccilhode mark NÉ '4 h Feature • /J v P S M D • Small SMD • ß y - rx • Low Noise • trr=50ns • trr=50ns tt 5 k . ii Type No.
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D1FL40
D1FL40
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KDZ20VV
Abstract: No abstract text available
Text: SEM ICONDUCTOR KDZ2.0W -36W TE CHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CO N ST A N T V O L T A G E REG U LATIO N A PPLICATIO N. R EFEREN CE V O L T A G E A PPLICATION. r CATHOD E MARK FEA T U RE S • Small Package : VSC • Sharp Breakdown Characteristic.
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D1FJ4
Abstract: diode SMD WL diode smd marking wl
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : 1F D1FJ4 40V 2A Cathode mark ®[ r | _ * iT ? ® Feature • ^ jv g y s M D 1 Small SM D • Tj=15ü°C 1Tj=150°C 1 Low lR=0.2mA • <SlR=0.2mA • L»[c_<CLl Unit-mm Weight 0.058g Typ 10 iWt^^§•'3
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Tj-150
i50Hz
D1FJ4
diode SMD WL
diode smd marking wl
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94v01
Abstract: 72741 1509-50 mark 641 i 72741 72741 B 94v-01 631109
Text: 0 2 .5 ( 2 .8 8 ) TYP.(2) 0 ( 2 .2 ) TYP.I2) .09 — FOR I.D MARK SEE NOTE 2 ON SHT.2 ( 3 .0 ) .57 00 CM O S O o CM O S 5 D (0.60)/.024 * [< ] o C NOTESi I« FOR MATERIAL SPECIFICATION SEE NOTE 1. ON SHEET 2. REF. p CO o s o UJ (2 6 .6 ) — MIN. TIN PLATE
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so90663x2.
SDA-90663E
94v01
72741
1509-50
mark 641
i 72741
72741 B
94v-01
631109
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s06q
Abstract: No abstract text available
Text: m m w rcffiicrasmïi-S I REVISIONS R EVI SI ON I E ' CONSENTITA LA 0 VIJIGAZ IONE ALL RIGHTS RESERVED. 6Y AMP INCORPORATED. COPYRIGHT 19 TUTTI { EH RITT i $0«0 RESERVATI RELEASED REVI SEE» B I R E T E N T I O N LATCH D iS P O S I TIVO D I B 2 R I TENZI O N E )
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ET0-0462-97
-JUN-96
09MAY94
s06q
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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kh472m
Abstract: 222M X1Y2 KH472M X1Y2 BS415 kh 103m kh 103m x1 y2 471K CAPACITOR x1y2 472m kc 472m 103M capacitor DE1307E472M-KH
Text: This is the PDF file of catalog No.C80E-4. No.C80E4.pdf CERAMIC CAPACITOR Safety Standard Recognized Ceramic Capacitor Type KH 125*C Guaranteed Recognized in 10 Countries • FEATURES 1. We design capacitors in much more compact size than KC type,having reduced the diameter by 20%max.
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C80E-4.
C80E4
IEC384-14
JIS-C-5154
DE0807
DE0907
DE1007
DE1207
DE1307
DE1607
kh472m
222M X1Y2
KH472M X1Y2 BS415
kh 103m
kh 103m x1 y2
471K CAPACITOR
x1y2 472m
kc 472m
103M capacitor
DE1307E472M-KH
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