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    M6 SOT23 Search Results

    M6 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    M6 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    fairchild marking codes sot-23

    Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
    Text: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50


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    KST812M3/M4/M5/M6/M7 OT-23 KST5088 fairchild marking codes sot-23 marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component PDF

    BSS66

    Abstract: SOT23 M7 BSS66R BSS67 100khz 5v transistor npn transistor m6 npn BSS67R medium power switching transistors DSA003680
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS66 BSS67 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS66 BSS67 BSS66R BSS67R - M6 M7 M8 M9 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60


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    BSS66 BSS67 BSS66 BSS67 BSS66R BSS67R 100mA* SOT23 M7 100khz 5v transistor npn transistor m6 npn medium power switching transistors DSA003680 PDF

    S9015

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz PDF

    S9015 SOT-23

    Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015 PDF

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
    Text: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    S9015 OT-23 OT-23 S9014 -100A, -100mA, -10mA m6 marking transistor sot-23 sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6 PDF

    BSR58

    Abstract: No abstract text available
    Text: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted


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    BSR58 OT-23 BSR58 PDF

    MARK M6

    Abstract: BSR58
    Text: BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier 3 • This device is designed for low-power chopper or switching application sourced from process 51 2 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted


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    BSR58 OT-23 MARK M6 BSR58 PDF

    KST812M6 transistor

    Abstract: KST812M6
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage


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    KST812M3/M4/M5/M6/M7 KST5088 OT-23 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 KST812M6 transistor KST812M6 PDF

    Untitled

    Abstract: No abstract text available
    Text: S9015 PNP 3 1 2 SOT-23 V CEO Value -45 -50 -5 -100 200 1.6 625 S9015=M6 -45 -0.1 -40 -100 -5.0 -100 E=-45Vdc, I E= 0 -50 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u S9015 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)


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    S9015 OT-23 S9015 -45Vdc, -10mAdc) -100uA -50uA PDF

    S9015LT1

    Abstract: S9015 S9015M
    Text: S9015LT1 PNP 3 1 2 SOT-23 V CEO Value -45 -50 -5 -100 200 1.6 625 S9015=M6 -45 -0.1 -40 -100 -5.0 -100 E=-45Vdc, I E= 0 -50 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u S9015LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)


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    S9015LT1 OT-23 S9015 -45Vdc, -10mAdc) -100uA -50uA S9015LT1 S9015M PDF

    Untitled

    Abstract: No abstract text available
    Text: S9015 PNP 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value -45 -50 -5 -100 200 1.6 625 S9015=M6 -45 -0.1 -40 -100 -5.0 -100 E=-45Vdc, I E= 0 ) -50 -5.0 WEITRON http://www.weitron.com.tw O -0.1 u -0.1 u -0.1 u S9015 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


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    S9015 OT-23 S9015 -45Vdc, -10mAdc) -100uA -50uA PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


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    2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 PDF

    2SA812

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


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    2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 2SA812 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


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    2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7 OT-23 PDF

    qqmz

    Abstract: marking k501 tssop14 st automotive
    Text: TS861, TS862, TS864 Rail-to-rail micropower BiCMOS comparators Datasheet − production data Features • SOT23-5 Ultra low current consumption 6 µA/comp. at VCC = 2.7 V ■ Rail-to-rail CMOS inputs ■ Push-pull outputs ■ Supply operation from 2.7 to 10 V


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    TS861, TS862, TS864 OT23-5 SO-14 TSSOP14 qqmz marking k501 tssop14 st automotive PDF

    max14574

    Abstract: MAX1786 MAX1788 MAX8899 DS1849 MAX16908 MAX4967 DS3610 max17018 max13487
    Text: Monitor Reports by Product: 1. Find the product of interest in the table below. Note the process and/or package for that product. 2. Use the "Back" button to return to the home page. 3. Select the process in the "Process Reliability" for the product of interest.


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    PDF

    OPTOCOUPLER 4-PIN

    Abstract: 1N4148 sod123 SMD7343 zener 8w PWM DRIVE control 100V 20A SMD-7343 1n4148 any 1N4148 SOD323 pwm lm2904 HV9608DB1
    Text: HV9608DB1 3.3V/20A DC/DC Converter for Telecom Systems Introduction The Supertex HV9608 PWM controller contains all the features and flexibility needed to implement current-mode control for DC/DC converters, which is demonstrated in a high efficiency, open-frame, low,


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    HV9608DB1 V/20A HV9608 HV9608DB1) HV9608DB1 75VDC A091004 OPTOCOUPLER 4-PIN 1N4148 sod123 SMD7343 zener 8w PWM DRIVE control 100V 20A SMD-7343 1n4148 any 1N4148 SOD323 pwm lm2904 PDF

    m6 marking transistor sot-23

    Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
    Text: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


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    2SA812 OT-23 OT-23 2SC1623 -100A, -100mA, -10mA -10mA m6 marking transistor sot-23 transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812 PDF

    m6 marking transistor sot-23

    Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER


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    OT-23 2SA812 OT-23 2SC1623 -100A, -100mA, -10mA m6 marking transistor sot-23 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23 PDF

    1D-S marking

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan
    KST812M3/M4/M5/M6/M7 OT-23 KST5088 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 1D-S marking PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS66 BSS67 SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS PARTMARKING DETAILS BSS66 - M6 BSS67 - M7 BSS66R- M8 BSS67R - M9 ABSOLUTE MAXIMUM RATINGS VALUE UNIT V CBO 60 V V CEO 40 V V ebo !cm 6 V 200 mA Continuous Collector Current !c 100 mA Base Current


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    BSS66 BSS67 BSS66 BSS67 BSS66R- BSS67R 7D57fl DS110 PDF

    BSS67

    Abstract: No abstract text available
    Text: BSS66 SOT23 NPN SILICON PLANAR M E D IU M POW ER SW ITCHING T R A N SIST O R S ISSUE 2 - SEPTEMBER 1995 Q PARTMARKING DETAILS — BSS66 BSS67 - RQQ«7 M6 M7 BSS66R- M8 BSS67R- M9 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE


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    BSS66 BSS67 BSS66 BSS66R- BSS67R- Emitter100m BSS67 100kHz PDF

    MMBA812M5

    Abstract: marking M3 MMBA812M4 MMBA812M3 MMBA812M6
    Text: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DE | b 3 b 7 E S S 003Ô27S a CDIO D E S /O PTO 3 ^C SOT23 continued) 38275 D T - z *- /* MMBA812M3,4,5,6,7 DEVICENO. SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C j • Designed for general-purpose and audio-frequency amplifier


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    MMBA812M3 MMBA812M4 MMBA812M5 MMBA812M6 MMBA812M7 marking M3 PDF