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    STMicroelectronics M54HC03KG

    NAND Gate 4-Element 2-IN 14-Pin Flat - Bulk (Alt: M54HC03KG)
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    Avnet Americas M54HC03KG Bulk 10
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    Fairchild Semiconductor Corporation MM54HC03J/883

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    Bristol Electronics MM54HC03J/883 45
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    National Semiconductor Corporation MM54HC03E/883

    NAND Gate, CQCC20 '
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    Rochester Electronics MM54HC03E/883 19 1
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    STMicroelectronics M54HC03KVB

    Electronic Component
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    ComSIT USA M54HC03KVB 19
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    M54HC03 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M54HC03 STMicroelectronics QUAD 2-INPUT OPEN DRAIN NAND GATE Original PDF
    M54HC03 STMicroelectronics RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE Original PDF
    M54HC03D STMicroelectronics RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE Original PDF
    M54HC03F1 SGS-Thomson QUAD 2-INPUT NAND (OPEN DRAIN) Scan PDF
    M54HC03F1 STMicroelectronics QUAD 2-INPUT OPEN DRAIN NAND GATE Scan PDF
    M54HC03F1R STMicroelectronics QUAD 2-INPUT OPEN DRAIN NAND GATE Original PDF
    M54HC03K STMicroelectronics RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE Original PDF

    M54HC03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74LS03

    Abstract: M54HC03 M54HC03F1R M74HC03 M74HC03B1R M74HC03C1R M74HC03M1R 74HC03
    Text: M54HC03 M74HC03 QUAD 2-INPUT OPEN DRAIN NAND GATE . . . . . . . HIGH SPEED tPZ = 5 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS


    Original     		PDF M54HC03 M74HC03 54/74LS03 M54HC03F1R M74HC03M1R M74HC03B1R M74HC03C1R M54/74HC03 74LS03 M54HC03 M54HC03F1R M74HC03 M74HC03B1R M74HC03C1R M74HC03M1R 74HC03

    M54HC03

    Abstract: M54HC03D M54HC03K
    Text: M54HC03 RAD-HARD QUAD 2-INPUT OPEN DRAIN NAND GATE • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 8ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) BALANCED PROPAGATION DELAYS:


    Original     		PDF M54HC03 SCC-9201-114 M54HC03 DILC-14 FPC-14 M54HC03D M54HC03K

    940900701F

    Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
    Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC


    Original     		PDF M54HCxxx M54HCTxxx Flat-16 DIL-16 Flat-14 DIL-14 M54HCTxxx 940900701F 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F

    M54HC132

    Abstract: M54HC595KG M54HC138KG 920112001F
    Text: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics


    Original     		PDF M54HCxxx, M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 DocID17367 M54HC132 M54HC595KG M54HC138KG 920112001F

    54HC4053

    Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
    Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC


    Original     		PDF M54HCxxx M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 Flat-20 DIL-20 Flat-24 DIL-24 54HC4053 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F

    940900703F

    Abstract: No abstract text available
    Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC


    Original     		PDF M54HCxxx M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 Flat-20 DIL-20 Flat-24 DIL-24 940900703F

    940806401F

    Abstract: No abstract text available
    Text: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage  Low power DC dissipation: 1 µA max. at 25 °C  High speed tPD = 8 ns typ. at 25 °C  Symmetrical outputs characteristics


    Original     		PDF M54HCxxx, M54HCTxxx Flat-14 DIL-14 Flat-16 DIL-16 DocID17367 940806401F

    74HC03

    Abstract: No abstract text available
    Text: M54HC03 M74HC03 Æ T SGS-THOMSON HO ®IILIl g¥K(Q Ri]D©i QUAD 2-INPUT OPEN DRAIN NAND GATE • LOW POWER DISSIPATION Ice = 1 (MAX.) at TA = 25° C ■ HIGH NOISE IMMUNITY VNIH = VN|L = 28% VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ SYMMETRICAL OUTPUT IMPEDANCE


    OCR Scan     		PDF M54HC03 M74HC03 M74HC03 54/74LS03 M54/74HC03 10-r20mA 74HC03

    74HC03

    Abstract: M54HC03 M74HC03
    Text: HS-CMOS 4 ' ’ Is M54HC03 MÜHC03 INTEGRATED CIRCUITS PRODUCT PREVIEW QUAD 2-INPUT NAND OPEN DRAIN DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUT NAND (OPEN DRAIN) fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL


    OCR Scan     		PDF MS4HC03 M54/74HC03 M54HC03 M74HC03 74HC03

    Untitled

    Abstract: No abstract text available
    Text: M54HC03 M74HC03 T S G S -T H O M S O N QUAD 2-INPUT OPEN DRAIN NAND GATE • LOW POWER DISSIPATION lCC = 1 /*A MAX. at Ta = 25°C .-" \ ■ HIGH NOISE IMMUNITY V nih = V nil = 28% Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ SYMMETRICAL OUTPUT IMPEDANCE


    OCR Scan     		PDF M54HC03 M74HC03 54/74LS03 M54HC03 M74HC03 M54/74HC03 -20mA

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SCS-THOMSON M54HC03 M74HC03 È QUAD 2-INPUT OPEN DRAIN NAND GATE HIGH SPEED tpz = 5 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Icc = 1 nA (MAX.) AT Ta = 25 “C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY 1 0 LSTTLLOADS


    OCR Scan     		PDF M54HC03 M74HC03 54/74LS03 M54HC03F1R 74HC03M M74HC03B1R M74HC03C1R M54/74HC03

    74hc03

    Abstract: 54HC 74HC M54HC03 M74HC03 74LS03 74HC03 equivalent
    Text: SGS -THOMSON M 54HC03 M 74HC03 QUAD 2-INPUT OPEN DRAIN NAND GATE • LOW POWER DISSIPATION Ice = 1 /¿A MAX. a t TA = 25°C ■ HIGH NOISE IMMUNITY Vnih = V n il = 2 0/,° ^cc (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ SYMMETRICAL OUTPUT IMPEDANCE


    OCR Scan     		PDF M54HC03 M74HC03 54/74LS03 M54/74HC03 270fl 130-h260Ã 74hc03 54HC 74HC M74HC03 74LS03 74HC03 equivalent

    Untitled

    Abstract: No abstract text available
    Text: SbE D £ = 7 S G S - • T 7^237 H O M S O 0G3R73Ö öfil ■ S G T H M 54H C 03 M 74H C 03 N ^ T # . llO E IILIi(gìlsì®liìilO(gi S 6 S-THOnSON T -l? -? -! QUAD 2-INPUT OPEN DRAIN NAND GATE ■ LOW POWER DISSIPATION Ice = 1 I t A (MAX. at TA = 25°C


    OCR Scan     		PDF 0G3R73Ã 54/74LS03 -20mA

    CI 74LS08

    Abstract: IC PIN CONFIGURATION OF 74LS08 PIN CONFIGURATION OF 74LS08 ic and gate 74LS08 pin configuration CI AND 74LS08 74LS08M pin configuration logic symbol 74LS08 PIN CONFIGURATION OF 74LS08 HCOS
    Text: rrr Ä T# s g s -th o m s o n m54 hcos IM D S i« ! » « ! M74HC03 QUAD 2-INPUT OPEN DRAIN NAND GATE • HIG HSPEED tpz = 5 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 1 |iA (MAX.) A T T a = 25°C ■ HIGH NOISE IMMUNITY V nih = V n il = 28 % V cc (MIN.)


    OCR Scan     		PDF M74HC03 54/74LS08 M54HC03F1 M74HC03M1 M74HC03B1 M74HC03C1 M54/74HC03 CI 74LS08 IC PIN CONFIGURATION OF 74LS08 PIN CONFIGURATION OF 74LS08 ic and gate 74LS08 pin configuration CI AND 74LS08 74LS08M pin configuration logic symbol 74LS08 PIN CONFIGURATION OF 74LS08 HCOS