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    M2P DIODE Search Results

    M2P DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    M2P DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M2P diode

    Abstract: smd 5736 led white smd zener color codes m2p zener catalogue automatic lamp incandescent impedance relay 24v omron smd top led lamps ST9141A1002 transistor smd 24c
    Text: Indicator Rectangular M2P Large Rectangular-bodied Indicators • Excellent illumination with even surface brightness. ■ Three-color models (green, orange, red; chameleon lighting) included in lineup. Be sure to read Safety Precautions for All Pushbutton


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GASTUBE ARRESTER Gas tube arrester GTA is a surge absorber featuring low capacitance and high surge absorption energy. lt consists of a sealed tube in which inert gas is injected and electrodes which are set at fixed intervals. The simple structure and the dimensional accuracy offer high


    Original     		PDF DC100V

    Philips MARKING CODE

    Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
    Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked


    Original     		PDF OT143, OT323, OT343, OT363, OD110, OD323 OD523 BF992 PMBF4416A BF510 Philips MARKING CODE Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363

    marking M2P diode

    Abstract: M2P diode diode m2r M2R DIODE MA741WK
    Text: MA111 Schottky Barrier Diodes SBD MA741WA, MA741WK Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 Two elements are incorporated in MA741 (S-Mini type 3 pins) ● Low forward rise voltage VF and satisfactory wave detection efficiency


    Original     		PDF MA111 MA741WA, MA741WK marking M2P diode M2P diode diode m2r M2R DIODE MA741WK

    Diode Marking WA

    Abstract: M2P diode M2R DIODE MA704WA
    Text: MA111 Schottky Barrier Diodes SBD MA704WA, MA704WK Silicon epitaxial planer type Unit : mm +0.2 For switching For wave detection circuit 2.8 –0.3 +0.25 1.5 –0.05 Low forward rise voltage VF and satisfactory wave detection effi- 1.45 3 +0.1 ● 1 0.4 –0.05


    Original     		PDF MA111 MA704WA, MA704WK MA704A Diode Marking WA M2P diode M2R DIODE MA704WA

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X704D, MA3X704E (MA704WA, MA704WK) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage IFM 150 mA Single Double *


    Original     		PDF MA3X704D, MA3X704E MA704WA, MA704WK) MA3X704A MA704A)

    marking m2p

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3J741D, MA3J741E (MA741WA, MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η


    Original     		PDF MA3J741D, MA3J741E MA741WA, MA741WK) MA3J741 MA741) marking m2p

    M2P diode

    Abstract: Double high-speed switching diode MA3S781D
    Text: Schottky Barrier Diodes SBD MA3S781D Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 • Features VR 30 V Peak reverse voltage VRM 30 V Single 0.12 − 0.02 Reverse voltage (DC) + 0.05 0.28 ± 0.05 Unit + 0.05 Rating


    Original     		PDF MA3S781D M2P diode Double high-speed switching diode MA3S781D

    M2P diode

    Abstract: marking m2p M2R DIODE MINI 3PIN MA3X704D MA3X704E
    Text: Schottky Barrier Diodes SBD MA3X704D, MA3X704E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V Peak forward current Single IFM 150 mA Forward current (DC) Single + 0.1 0.16 − 0.06


    Original     		PDF MA3X704D, MA3X704E MA3X704D/E MA3X704D O-236 SC-59 Markin02 M2P diode marking m2p M2R DIODE MINI 3PIN MA3X704E

    MA3J741D

    Abstract: MA3J741E A1033 M2P diode
    Text: Schottky Barrier Diodes SBD MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two MA3J741s are contained in one package (S-mini type 3-pin) • Low forward rise voltage (VF) and satisfactory wave detection


    Original     		PDF MA3J741D, MA3J741E MA3J741s MA3J741D MA3J741E A1033 M2P diode

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3S781D, MA3S781E (MA781WA, MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package • High-density mounting is possible


    Original     		PDF MA3S781D, MA3S781E MA781WA, MA781WK) MA3S781 MA781)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package


    Original     		PDF 2002/95/EC) MA3J741D MA741WA) MA3J741E MA741WK) MA3J741 MA741)

    MA3X704A

    Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK
    Text: Schottky Barrier Diodes SBD MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 0 to 0.1 Symbol Rating


    Original     		PDF MA3X704D MA704WA) MA3X704E MA704WK) SC-59 MA3X704D MA3X704D: MA3X704E: MA3X704A MA3X704E MA704A MA704WA MA704WK

    MA3J741EG

    Abstract: MA3J7410G MA3J741DG
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741DG, MA3J741EG Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name


    Original     		PDF 2002/95/EC) MA3J741DG, MA3J741EG MA3J741DG MA3J7410G MA3J741EG MA3J741DG

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741DG, MA3J741EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name MA3J741DG 1: Cathode 1 2: Cathode 2


    Original     		PDF 2002/95/EC) MA3J741DG, MA3J741EG MA3J7410G MA3J741DG MA3J741EG

    MA3J741

    Abstract: MA3J741D MA3J741E MA741 MA741WA MA741WK ir 0425
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 5˚


    Original     		PDF 2002/95/EC) MA3J741D MA741WA) MA3J741E MA741WK) MA3J741 MA741) MA3J741 MA3J741D MA3J741E MA741 MA741WA MA741WK ir 0425

    MA3X704D

    Abstract: MA3X704E MA704WA MA704WK panasonic ma diodes sc-59 Marking marking m2p panasonic "rs 466"
    Text: Schottky Barrier Diodes SBD MA3X704D , MA3X704E (MA704WA,MA704WK) Silicon epitaxial planar type + 0.25 Parameter Symbol Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V IFM 150 mA Forward current (DC) Single 30 Junction temperature Tj 125 °C Storage temperature


    Original     		PDF MA3X704D MA3X704E MA704WA MA704WK) MA3X704D/E MA3X704D O-236 SC-59 MA3X704E MA704WK panasonic ma diodes sc-59 Marking marking m2p panasonic "rs 466"

    ma741

    Abstract: marking m2p MA3J741 MA3J741D MA3J741E MA741WA MA741WK
    Text: Schottky Barrier Diodes SBD MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η


    Original     		PDF MA3J741D MA741WA) MA3J741E MA741WK) MA3J741 MA741) ma741 marking m2p MA3J741 MA3J741D MA3J741E MA741WA MA741WK

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package


    Original     		PDF 2002/95/EC) MA3J741D MA741WA) MA3J741E MA741WK) MA3J741 MA741)

    MA3S781

    Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
    Text: Schottky Barrier Diodes SBD MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package • High-density mounting is possible


    Original     		PDF MA3S781D MA781WA) MA3S781E MA781WK) MA3S781 MA781) MA3S781 MA3S781D MA3S781E MA781 MA781WA MA781WK

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d


    Original     		PDF 2002/95/EC) MA3J741D MA741WA) MA3J741E MA741WK) MA3J741 MA741)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 (0.44) 1 2 3˚ (0.80)


    Original     		PDF 2002/95/EC) MA3S781D MA781WA) MA3S781E MA781WK) MA3S781 MA781)

    MA3S781

    Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05


    Original     		PDF 2002/95/EC) MA3S781D MA781WA) MA3S781E MA781WK) MA3S781 MA781) MA3S781 MA3S781D MA3S781E MA781 MA781WA MA781WK

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1


    Original     		PDF 2002/95/EC) MA3X704D MA704WA) MA3X704E MA704WK) MA3X704A MA704A)