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    2SF256

    Abstract: M28F256A
    Text: rz7 SCS-THOMSON M28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)


    OCR Scan     		PDF M28F256A 100ns 10jas M28F256A PDIP32 PLCC32 2SF256

    M28F256A

    Abstract: No abstract text available
    Text: SGS-mOMSON RíilD g[S [l[L[I(gTriS(0 R!lD(gi M28F256A CMOS 256K (32K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION - Standby Current: 200nA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10jis


    OCR Scan     		PDF M28F256A 120ns 200nA 10jis M28F256A M28F256Afunc

    Untitled

    Abstract: No abstract text available
    Text: / = 7 ^7 # S G S - T H O M S O N M28F256A R { flD g [S ® i[L i(Ä ® R D D i CMOS 256K (32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F256A 120ns M28F256A PDIP32 PLCC32