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    Elite Semiconductor Memory Technology Inc M12L128324A6BIG2M

    SDRAM 128M /4M x 32
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    ComSIT USA M12L128324A6BIG2M 657
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    M12L128324A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M12L128324A-6BG Elite Semiconductor Memory Technology 1M x 32 Bit x 4 Banks Synchronous DRAM Original PDF
    M12L128324A-6TG Elite Semiconductor Memory Technology 1M x 32 Bit x 4 Banks Synchronous DRAM Original PDF
    M12L128324A-7TG Elite Semiconductor Memory Technology 1M x 32 Bit x 4 Banks Synchronous DRAM Original PDF

    M12L128324A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: ESM T M12L128324A 2E (Preliminary) SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION „ „ „ „ „ „ „ „ JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M12L128324A M12L128324A-5BG2E 200MHz M12L128324A-6BG2E 166MHz M12L128324A-7BG2E 143MHz

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L128324A 2E SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3)


    Original     		PDF M12L128324A M12L128324A-5BG2E 200MHz M12L128324A-6BG2E 166MHz M12L128324A-7BG2E 143MHz M12L128324A

    esmt M12L128324A

    Abstract: M12L128324A-7TGI M12L128324A-6BI
    Text: ESMT M12L128324A Operation temperature condition -40°C~85°C Revision History Revision 1.0 Jan. 16 2006 -Original Revision 1.1(Feb. 14 2006) -Modify ICC2P; ICC4; ICC5 spec -Modify product no. of ordering information Elite Semiconductor Memory Technology Inc.


    Original     		PDF M12L128324A esmt M12L128324A M12L128324A-7TGI M12L128324A-6BI

    M12L128324A-7TG

    Abstract: esmt M12L128324A M12L128324A-6BG M12L128324A-6TG
    Text: ESMT M12L128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information Revision 1.0 (Dec. 22 2005) -Delete “Preliminary” from datasheet -Add 90BGA Packing Dimension Revision 1.1 (Feb. 14 2006)


    Original     		PDF M12L128324A 90BGA M12L128324A-7TG esmt M12L128324A M12L128324A-6BG M12L128324A-6TG

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information Revision 1.0 (Dec. 22 2005) -Delete “Preliminary” from datasheet -Add 90BGA Packing Dimension Elite Semiconductor Memory Technology Inc.


    Original     		PDF M12L128324A 90BGA

    M12L128324A-6BG

    Abstract: M12L128324A-6TG M12L128324A-7TG
    Text: ESMT M12L128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information Revision 1.0 (Dec. 22 2005) -Delete “Preliminary” from datasheet -Add 90BGA Packing Dimension Revision 1.1 (Feb. 14 2006)


    Original     		PDF M12L128324A 90BGA M12L128324A-6BG M12L128324A-6TG M12L128324A-7TG

    M12L128324A-6TG

    Abstract: M12L128324A-6BG M12L128324A-7TG
    Text: ESMT M12L128324A SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 1, 2 & 3 - Burst Length ( 1, 2, 4, 8 & full page )


    Original     		PDF M12L128324A M12L128324A-6TG 166MHz M12L128324A-7TG 143MHz M12L128324A-6BG M12L128324A-7BG M12L128324A-6TG M12L128324A-6BG M12L128324A-7TG

    M12L128324A-5BG2E

    Abstract: BGA90
    Text: ESMT M12L128324A 2E (Preliminary) SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M12L128324A M12L128324A-5BG2E M12L128324A-6BG2E M12L128324A-7BG2E 200MHz 166MHz 143MHz M12L128324A BGA90

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L128324A 2M SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (1, 2 & 3 )


    Original     		PDF M12L128324A M12L128324A-6BG2M 166MHz M12L128324A-7BG2M 143MHz M12L128324A

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M12L128324A Revision History Revision 0.1 May. 13 2005 -Original Revision 0.2 (Aug. 08 2005) -Delete Non-Pb-free of ordering information Elite Semiconductor Memory Technology Inc. Publication Date: Aug. 2005 Revision: 0.2 1/46 ESMT SDRAM


    Original     		PDF M12L128324A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L128324A 2E Operation Temperature Condition -40°C~85°C SDRAM 1M x 32 Bit x 4 Banks Synchronous DRAM FEATURES ORDERING INFORMATION y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M12L128324A M12L128324A-5BIG2E 200MHz M12L128324A-6BIG2E 166MHz M12L128324A-7BIG2E 143MHz

    M13S2561616A-5TG

    Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
    Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now


    Original     		PDF 256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII