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    M11 MOSFET Search Results

    M11 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    M11 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN100 N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits


    Original     		PDF DMN100 AEC-Q101 J-STD-020 MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: DMN100 N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits


    Original     		PDF DMN100 AEC-Q101 J-STD-020 MIL-STD-202, DS30049

    Untitled

    Abstract: No abstract text available
    Text: DMN100 N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits


    Original     		PDF DMN100 AEC-Q101 J-STD-020 MIL-STD-202, DS30049

    cgs resistor

    Abstract: AN-7017 smd mosfet MOSFET SMD pp M11 mosfet
    Text: www.fairchildsemi.com AN-7017 Reducing Power Losses in MOSFETs by Controlling Gate Parameters Alan Elbanhawy, Fairchild Semiconductor Introduction The gate Equivalent Series Resistance ESR has been recognized as a factor affecting the losses in MOSFETs for a


    Original     		PDF AN-7017 AN00007017 cgs resistor AN-7017 smd mosfet MOSFET SMD pp M11 mosfet

    vj0603Y104KXAAT

    Abstract: VJ0603Y103KXAAT VJ0603Y101KXAAT C3216X7R1E105 F930J226MAA LM2642 LP3872 6MV1500WG
    Text: National Semiconductor LM2642 June 2006 1.0 Design Specifications Inputs Outputs #1 Outputs #2 Outputs #3 VinMin=18 Vout1=2.5 Vout2=3.3 Vout3=1.5 VinMax=21 Iout1=0.9 Iout2=1.75 Iout3=3.7 2.0 Design Description This is an LM2642 high efficiency three output step-down


    Original     		PDF LM2642 LM2642 LP3872) CSP-9-111S2) CSP-9-111S2. vj0603Y104KXAAT VJ0603Y103KXAAT VJ0603Y101KXAAT C3216X7R1E105 F930J226MAA LP3872 6MV1500WG

    FET J134

    Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
    Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original     		PDF 1011LD110B 1011LD110B 110Wpk 1030MHz 20Network 250mA, FET J134 JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor

    Transistor J182

    Abstract: No abstract text available
    Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original     		PDF 1011LD110A 1011LD110A 110Wpk 1030MHz 250mA, Transistor J182

    1030MHz-1090MHz

    Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
    Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original     		PDF 1011LD110A 1011LD110A 110Wpk 1030MHz 20Network 250mA, 1030MHz-1090MHz capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V

    Untitled

    Abstract: No abstract text available
    Text: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest


    Original     		PDF 1011LD110B 1011LD110B 110Wpk 1030MHz 250mA,

    960-1215 MHz transistor 20W

    Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
    Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.


    Original     		PDF 0912LD20 0912LD20 20Wpk 960-1215 MHz transistor 20W CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v ADG419 capacitor 226 20V 47pf 55QT

    electrolytic capacitor 470uF 63V

    Abstract: electrolytic capacitor, .1uF electrolytic capacitor 470uf L494 chip capacitor c06
    Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.


    Original     		PDF 0912LD20 0912LD20 20Wpk electrolytic capacitor 470uF 63V electrolytic capacitor, .1uF electrolytic capacitor 470uf L494 chip capacitor c06

    inverter in 12v DC to 220v AC 400w circuit diagrams

    Abstract: step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV
    Text: Discrete Devices 2009-5 SANYO Discrete Devices SANYO's environmentally-considered discrete ECoP contributes to the realization of comfortable life in various aspects. Discrete devices and ExPDs power device are environmentally-considered products that well address the needs (small size, low profile, high efficiency & high reliability)


    Original     		PDF EP124A inverter in 12v DC to 220v AC 400w circuit diagrams step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV

    RD2004

    Abstract: 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply
    Text: ディスクリートデバイス 2009-4 三洋ディスクリートデバイス 環境に配慮した三洋ディスクリートデバイス ECoP R ディスクリートデバイスExPD パワーデバイス）は、 様々な分野の機器の小型化・薄型化・高効率化・高信頼性化に


    Original     		PDF 3LN02M LV2282VA EC2C01C SVC710 SVC707 ECSP1008-2 P124A RD2004 2SK4087 2SK4097 2sk4086 2SC5707 2sk4096 SBX201C 2SC5706 2sk3615 half-bridge power supply

    3M-27

    Abstract: iButton tmex DS1961S DS1961S-F3 DS1961S-F5 DS1963S DS9093A DS9093RA DS9096P
    Text: DS1961S 1kb Protected EEPROM iButton With SHA-1 Engine www.maxim-ic.com SPECIAL FEATURES § § § § § § § § § § 1128 Bits of 5V EEPROM Memory Partitioned into Four Pages of 256 Bits, a 64Bit Write-Only Secret, and up to Five General-Purpose Read/Write Registers


    Original     		PDF DS1961S 64Bit 160-Bit 512-Bit 3M-27 iButton tmex DS1961S DS1961S-F3 DS1961S-F5 DS1963S DS9093A DS9093RA DS9096P

    CRC16

    Abstract: CRC-16 DS1963S DS2432 DS2432P DS2432X
    Text: Preliminary DS2432 1k-Bit Protected 1-Wire EEPROM with SHA-1 Engine www.dalsemi.com FEATURES PIN ASSIGNMENT 1128 bits of 5V EEPROM memory partitioned into four pages of 256 bits, a 64-bit write-only secret and up to 5 general purpose read/write registers


    Original     		PDF DS2432 64-bit 512-bit 160-bit 64-bit CRC16 CRC-16 DS1963S DS2432 DS2432P DS2432X

    M915

    Abstract: CRC16 CRC-16 DS1963S DS2432 DS2432P DS2432X Wt-14 3124C
    Text: Preliminary DS2432 1k-Bit Protected 1-Wire EEPROM with SHA-1 Engine www.dalsemi.com FEATURES PIN ASSIGNMENT 1128 bits of 5V EEPROM memory partitioned into four pages of 256 bits, a 64-bit write-only secret and up to 5 general purpose read/write registers


    Original     		PDF DS2432 64-bit 512-bit 160-bit 64-bit M915 CRC16 CRC-16 DS1963S DS2432 DS2432P DS2432X Wt-14 3124C

    Flyback Transformers SANYO TV

    Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
    Text: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)


    Original     		PDF CDMA2000] Flyback Transformers SANYO TV RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams

    RD1004

    Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
    Text: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）


    Original     		PDF CDMA2000] 3-7300Fax OVA21 052-453-1331Fax 06-6353-3361Fax 03-5701-1111Fax 078-928-8010Fax 078-331-8400Fax 075-371-4058Fax 052-459-3501Fax RD1004 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006

    G2-20P

    Abstract: delta rectifier all model AN1043 Si4724CY llc converter spice model converter spice model S50464 lambda schematic los-7-15 mosfet SPICE MODEL
    Text: SPICE Device Model Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs FUNCTIONAL DESCRIPTION The SI4724CY is a high-speed driver designed to operate in high frequency dc-dc switchmode power supplies. It is designed to be used with any single output PWM IC or ASIC to produce a highly


    Original     		PDF Si4724CY 18-Jul-08 G2-20P delta rectifier all model AN1043 llc converter spice model converter spice model S50464 lambda schematic los-7-15 mosfet SPICE MODEL

    M21 mosfet

    Abstract: LTC1703CG BG1 pwm capacitor m22 100v D05022HC m21 schottky IRF7805 LTC1702 LTC1703 MBR0520LT1
    Text: LTC1702/LTC1703 Dual 550kHz Synchronous 5V-to-2.x/1.xV Switching Regulator Controllers with VID U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1702/LTC1703 are dual switching regulator controllers optimized for high efficiency with low input voltages.


    Original     		PDF LTC1702/LTC1703 550kHz 1702/LTC1703 LTC1703 LTC1702/ 550kHz, LTC1702. 17023p M21 mosfet LTC1703CG BG1 pwm capacitor m22 100v D05022HC m21 schottky IRF7805 LTC1702 MBR0520LT1

    m7 smd diodes

    Abstract: smd diode E17 smd diode E7 DC1613A H12 smd transistor manual substitution FREE DOWNLOAD smd diode h9 smd diode b12 sma diode h5c transistor manual substitution
    Text: DEMO MANUAL DC1540A LTC2978 Octal Digital Power Supply Manager with EEPROM DESCRIPTION The DC1540A is a demonstration system for the LTC2978 Octal I2C/SMBus/PMBus Power Supply Monitor and Controller with EEPROM. It consists of 2 circuit boards namely the DC1360A and DC1361A. The DC1360A


    Original     		PDF DC1540A LTC2978 DC1540A LTC2978 DC1360A DC1361A. DC1360A DC1361A LTM4603EV) m7 smd diodes smd diode E17 smd diode E7 DC1613A H12 smd transistor manual substitution FREE DOWNLOAD smd diode h9 smd diode b12 sma diode h5c transistor manual substitution

    mosfet SPICE MODEL

    Abstract: G2-20P Si4724CY 21E16 llc converter spice model diode M022 AN1043 NMOS MODEL PARAMETERS SPICE 650N M0-22
    Text: SPICE Device Model Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs FUNCTIONAL DESCRIPTION The SI4724CY is a high speed driver designed to operate in high frequency dc-dc switchmode power supplies. It is designed to be used with any single output PWM IC or ASIC to produce a highly


    Original     		PDF Si4724CY 545u/4u) AN1043, 23-Jan-04 mosfet SPICE MODEL G2-20P 21E16 llc converter spice model diode M022 AN1043 NMOS MODEL PARAMETERS SPICE 650N M0-22

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1780A-C LTM4620EV: High Efficiency, PolyPhase 100A Step-Down Power µModule Regulator DESCRIPTION Demonstration circuit 1780A-C features poly phase design using the LTM®4620EV, the high efficiency, high density, dual 13A, switch mode step-down power module regulator.


    Original     		PDF DC1780A-C LTM4620EV: 780A-C 4620EV, DC1780A-C LTM4620s LTM4620 dc1780acfa

    B00ST1

    Abstract: M21 diode NDS8926
    Text: ra E ^ E L E Â S E LTC1702/LTC1703 L ir m TECHNOLOGY Dual 550kHz Synchronous 5V-to-2.x/l .xV Switching Regulator Controllers with VID D ecem ber 1998 F € f ìT U R € S D C S C R IP T IO n • Two Independent Controllers in One Package ■ LTC1703 Side 1 Output Is Compliant with the Intel


    OCR Scan     		PDF LTC1702/LTC1703 550kHz LTC1703 100mA LTC1702. B00ST1 M21 diode NDS8926