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    M 338 H Search Results

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    M 338 H Price and Stock

    Microchip Technology Inc MIC3385YHL-TR

    Switching Voltage Regulators 8MHz Power System Module in 14ld MLF,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MIC3385YHL-TR 4,273
    • 1 $3.03
    • 10 $3.03
    • 100 $2.52
    • 1000 $2.29
    • 10000 $2.29
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    KEMET Corporation ELH338M050AQ2AA

    Aluminum Electrolytic Capacitors - Snap In 3300uF 50Volts 85C 20% SNAP IN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ELH338M050AQ2AA 1,097
    • 1 $2.52
    • 10 $1.96
    • 100 $1.47
    • 1000 $1.05
    • 10000 $0.983
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    KEMET Corporation PHA225MLL3380QE4

    Aluminum Organic Polymer Capacitors 63Vol 380uF AXI 3KHr ESR=147 mOhms AECQ20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PHA225MLL3380QE4 1,086
    • 1 $5.6
    • 10 $4.3
    • 100 $3.66
    • 1000 $3.12
    • 10000 $3.06
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    Analog Devices Inc LT3380HUJM#PBF

    Power Management Specialized - PMIC Multi-Out Pwr Mgmt Solution w I2C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LT3380HUJM#PBF 794
    • 1 $13.66
    • 10 $11.58
    • 100 $9.09
    • 1000 $8.01
    • 10000 $8.01
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    Belden Inc SCIHP1338-4R7M

    Power Inductors - SMD Inductor SMD 4.70uH 18A 15.0mohms 200KHz
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SCIHP1338-4R7M 479
    • 1 $1.52
    • 10 $1.29
    • 100 $0.884
    • 1000 $0.757
    • 10000 $0.715
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    M 338 H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SW-338 GaAs SPDT Terminated Switch DC - 2.5 GHz Rev. V7 Functional Schematic Features • • • • • • • M/A-COM Products Very Low Power Consumption High Isolation: 30 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed


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    PDF SW-338 SW-338

    LT805

    Abstract: ic 339 LT8050
    Text: M/A-COM/ MICRO EL EC TR ON IC S SbM51fl3 DOÜOblD Ô25 fc.'ìE 3 IMACO 4 0 IC Ô M GaAs SPDT Terminated Switch DC-2.5 GHz Features SW-338, SW-339 SO-8 • Very Low Power Consumption: 75 |iW • Low Insertion Loss: 0.5 dB • High Isolation: 33 dB up to 2 GHz SW-338)


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    PDF SbM51fl3 SW-338) SW-339) SW-338, SW-339 SW-338 LT805 ic 339 LT8050

    Untitled

    Abstract: No abstract text available
    Text: 10 -Hi] B ( 1.75) n n n n n n n n n n H n n jm m ^{\ R4 =9 . ro — f- T *I -n jL n jim m m w im w L fU L n ji(5.4) SECT F IT T IN G NAI Z-Z 25.5 23 .6 27. 51338-1274 5 338- 209 20 21.5 19.6 23.1 51338-1674 51338-1009 100 19.5 17.6 21.1 51 338-0974 51 33 8- 0 99 9


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    PDF SD-51338-004 EN-02JA

    m 338 h

    Abstract: No abstract text available
    Text: M an A M P co m pa n y GaAs SPDT Terminated Switch DC-2.5 GHz SW-338, SW-339 SO-8 Features • V ery I.o w P o w e r C o n s u m p tio n : 75 |i\X • I.o w I n s e r tio n Loss: 0 .5 dl! • H ig h Iso la tio n : 3 3 dB u p to 2 G H z SW -338 28 cJB up to I i ¿Hz (SW-339)


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    PDF SW-338, SW-339 SW-339) packagSW-338 m 338 h

    Transistor 337

    Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
    Text: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier


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    Untitled

    Abstract: No abstract text available
    Text: AMPMODU .100 [2.54] Centerline Board-to-Board Headers Catalog 1307612 Revised 7-01 S tan d ard H eaders— U n shrouded, T rip le -R o w , .100 [2.54] C en terlin e .025 [0.64] Square Straight Post H m H H .338 [ 8 . 59 ] mm mm // m m is h m mm Material and Finish:


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    2S0880

    Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
    Text: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U


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    PDF 2SC790 2SD795 2SD1135 2SD389 2SD2023 2SD313 2SC79Ã 2SD390 2S0880 2SD427 SD 338 2Sd428 2sd880 2SD2023 2SC2320 2SC1815

    D0205AB

    Abstract: 1N3164 1N3164R 1N3168 1N3168R 1N3170 1N3170R 1N3172 1N3172R 1N3174
    Text: tary Silicon Power Rectifier a N3164 N3174 Dim. Inches M inim um A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - UNF 1.250 1.375 5.90


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    PDF D0205AB 1N3164 1N3164R 1N3168 1N3168R 1N3170 1N3170R 1N3172 1N3172R 1N3174 D0205AB

    LN2054

    Abstract: 1N1660 1N1661 1N1670 1N1671 1N2054 1N2055 1N3260 1N3261 1N4044
    Text: Silicon Power Rectifier N40441N4056 rs * 1 Dim ï M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S - c -H Inches M l- 1.218 1.350 5 .300 .793 .300 -.660 .338 .665 -.050 3 / 4 - 1 6 UNF 1.250 3 0.9 4 1.375 34.29 5.900


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    PDF D0205AB 1N4044 1N1660 1N1670 1N2054 1N3260 1N4045 1N1661 1N1671 1N2055 LN2054 1N3260 1N3261

    UN412Y

    Abstract: UN421D UN421E UN421L UN511D UN511E UN511F UN511L UN511M UN521D
    Text: - 338 - m % UN412Y tt töT _ ffl « Digital Wik&fä Ta=25T;, *EP(äTc=25T; VcBO Vc e o iC(DC) (V) (V) (A) -50 _ Pc* (W) (W) m ICBO (max) <WA) VcB (V) m (min) hp m & 14 (max) Vc e (V) (Ta=25'C) Ic /I e (A) OTOtyp (max) (V) -50 -0. 5 0.3 -1 -50 50 -10 -0.1


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    PDF UN412Y UN421D UN421E UM21F UN421L UN512) UN612X UN612Y 47K/10K UN621D UN511D UN511E UN511F UN511L UN511M UN521D

    Untitled

    Abstract: No abstract text available
    Text: Military Silicon Power Rectifier 1N3164 - 1N3174 Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - Maximum Minimum UNF


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    PDF 1N3164 1N3174 D0205AB

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage


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    PDF BC327/328 337/BC BC327 BC328

    BD 338 N

    Abstract: TRANSISTOR BD 338 BD336
    Text: _ J BD332; 334 BD336; 338 V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered


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    PDF BD332; BD336; OT-82 BD331, BD333, BD337. BD332 0Q34370 BD 338 N TRANSISTOR BD 338 BD336

    IMI7340

    Abstract: IMI7160 IMI7000 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620
    Text: m iT O Q Q ^ A M IU f CMOS GATE ARRAY NTERNATIONAL M IC R O CIR CU ITS I NC TELEPHONE: 408 263-6300 TWX: 910 338 2032 FAX: 408 263-6571 Oxide-isolated silicon-gate process Dual level metalization Fully autoroutable 792 to 12,000 2-input NAND equivalents Up to 220 I/O connections


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    PDF IMI7000 IMI7340 IMI7160 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620

    ic 723 cn

    Abstract: ZIP9 BA336 BA338 BA338L song ic
    Text: Audio ICs Mute detector 1C BA336/BA338/BA338L T h e BA336, B A 338 and B A 338L are m onolithic ICs d esig ned for m ute d etectio n and tap e end d etectio n . W h en a duration of silence 52dB m or less exceeds the tim e constant set with an external CR circuit, a sorig g ap is identi­


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    PDF BA336/BA338/BA338L BA336, BA338 BA338L 52dBm BA336 BA338/ BA338/BA338L ic 723 cn ZIP9 song ic

    2SC1815

    Abstract: 25c1815 2SC945 2SC1740 2SC945 Y 2SC763 2SC1275 2sc1949 2SC829 2sc1741
    Text: - m £ 2SC 328 2SC 329 * 2SC 330 * 2SC 331 * 2SC 332 * 2SC 333 * 2SC 334 * 2SC 335 * 2SC 336 * 2SC 337 ^ * 2SC 338 * 2SC 339 * 2SC 340 ^ * 2SC 342 * 2SC 343 * 2SC 350 •>' * 2SC 351 * 2SC 354 Manuf. # 3 SANYO Ä 3Ë TOSHIBA 2SC3S7A G TM s a NEC s i HITACHI


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    PDF 2SC748 2SC763 2SC2926 2SC1275 2SC1949 2SC2960 2SC752 2SC1815 25c1815 2SC945 2SC1740 2SC945 Y 2SC1275 2sc1949 2SC829 2sc1741

    BC338C

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 328 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage


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    PDF BC337/338 BC337/BC BC337 BC338 BC338C

    jd 1801

    Abstract: HT 1200-4 enb221 ENB221D-07A
    Text: - 338 — '<> T . ? * ± * - 346- 3l"Qd I l-Q d - L K - Ol-Qd 6-Qd s tr E lí8 - ^ > <miu CD : T r > * |a ig ^ > CO •C* - 351 - - 352 - < '■ •J~ ì3r 1*1 f ö :m m > - HT-1 HT-2 77)4.5 30.2*«' 1 189*» “ ) ■<rJ21.5MAX (0 846) '4 -Æ « - - i— t - - i-


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    PDF jD-07A jD-07B tS94V-0fflà 35MIN jD-07A EXB850D-07A EXB121D-07A H-101 jd 1801 HT 1200-4 enb221 ENB221D-07A

    1N3162

    Abstract: D0205AB n316 1N3161 1N3163 1N3164 1N3165 1N3166 1N3167 1N3168
    Text: —I MI— Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1/2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode Maximum Minimum 3 /4 -1 6 1.218 1.350 5.30 .793 .300 - .660 .338 .665 .125 - UNF


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    PDF D0205AB 1N3161 1N3162 1N3163 1N3164 1N3165 1N3166 1N3167 1N3168 1N3169 D0205AB n316

    Untitled

    Abstract: No abstract text available
    Text: V IT R O H M series POWER RESISTORS_ KWP - Types 330-3/5, 332-3/5, 333-3/5, 335-3/5, 336-3/5, 337-3/5, 338-3/5 CO sg < O t < 5 o. 2 < Ho Power Wirewound Resistors radial, fibre glass core, ceramic case Dimensions: 33x-3 CO Temperature rise: hot-spot


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    PDF 33x-3 33x-5 IEC-68-2-20T

    84fl

    Abstract: MAX343 I05n
    Text: - 338- M A X343 High-Voltage C M O S/D M O S Analog Switches mm m O N itf 'f t u rn V +/V " R on A T Vs = V + R on A T V S = V +2 0 V /- 2 0 V 127a + 3 0 W - 3 QV iosa ♦ 4 0 V / - 4 ÛV 92n 84n 127H 1050 39H 3 6 ÌÌ 320 3o n 39fl 36 Í1 +50V /- 50V ♦ 4 0 V /G N D


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    PDF MAX343 0V/-20V 0V/-30V 0V/-40V 0V/-50V 60WGND MAX343 84fl I05n

    Untitled

    Abstract: No abstract text available
    Text: B F M I h HI ^ r? ^ n -n c iD L s U V /U U L s U = ^ L r iJ February 10, 1998 5 AMP POSITIVE ADJUSTABLE LM 338 LM338P voltage regulators T E L :8 05 -4 98 -21 11 FAX :805-498-3804 W E B :http://www.sem tech.conn ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL


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    PDF LM338P

    2SD636

    Abstract: 2SD636 Matsushita RT1N241C DTC124EK 2SC3281 upa74ha 3394 2SC3372 NEC 3377 RT1N441C
    Text: - sa « Type No. tt 2SC 3365 ^'' 2SC 3366 2SC 3367 ISO 3368 2SC 3369 2SC 3370 2S0 337 3375 3376 3377 3378 3379 2SC 2SC 2SC 2SC 3380 338] 3382 3383 m h SANYO S ÎL 2SC3277 B S ÎL 2SD1236 2SD1236 ÍL fâ T T ta 2SC3257 2SC3137 B ÎL 3K S X «£ □— A


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    PDF 2SC3277 2SC3306 2SC2740 2SC4654 2SD1236 2SC3257 2SC2516 2SD1274 2SD1896 2SD636 2SD636 Matsushita RT1N241C DTC124EK 2SC3281 upa74ha 3394 2SC3372 NEC 3377 RT1N441C

    Untitled

    Abstract: No abstract text available
    Text: MN1631 M N 1 6 3 1 £ • 7 # - f $ H 1St / S u b Channel Adaptor (S in g le V oltage Supply' ( # — n ^ /D e sc rip tio n M N 1631 ¡ ± , -f ^ U n it ^ mm 16 fcf -y h -? i •7 / 7 7 1 2t 9 v a y e j. - ? ■ ^ x f i n t r T\ =340 339 338 3d 4t 5C


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    PDF MN1631 N1631